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- Electron backscatter diffraction (2) (entfernen)
Within the last decade, silicon drift detectors (SDD) systems have become more and more popular in the field of energy-dispersive spectroscopy (EDS). The main characteristic of the SDDs is their extremely high pulse load capacity of up to 750,000 counts per second at good or reasonable energy resolution (<123eV Mn-Kα, <46eV C-Kα at 100.000 cps). These properties in conjunction with electron backscatter diffraction (EBSD) techniques and modern data processing make a range of innovative analysis options possible, not only high speed mapping but also hyperspectral imaging techniques.
Crystal structures that show a broken symmetry in their cubic and hexagonal modifications are of great relevance for optoelectronic and photonic applications. This is why methods which are sensitive to non-centrosymmetric structures are important for analysis of these materials in technological applications.