Ingenieurwissenschaften und zugeordnete Tätigkeiten
Filtern
Erscheinungsjahr
- 2020 (2) (entfernen)
Dokumenttyp
Sprache
- Englisch (2)
Referierte Publikation
- ja (2) (entfernen)
Schlagworte
- Approximant (1)
- Chrystal orientation (1)
- Data processing (1)
- EBSD (1)
- Electron backscatter diffraction (1)
- Kikuchi diffraction (1)
- Orientation precision (1)
- Projection center (1)
- Quasicrystal (1)
- Scanning electron microscopy (1)
Organisationseinheit der BAM
Approximant-based orientation determination of quasicrystals using electron backscatter diffraction
(2020)
Orientation mapping of quasicrystalline materials is demonstrated using crystalline approximant structures in the technique of electron backscatter diffraction (EBSD). The approximant-based orientations are symmetrised according to the rotational point group of the quasicrystal, including the visualization of orientation maps using proper colour keys for quasicrystal symmetries. Alternatively, approximant-based orientation data can also be treated using pseudosymmetry post-processing options in the EBSD system software, which enables basic grain size estimations. Approximant-based orientation analyses are demonstrated for icosahedral and decagonal quasicrystals.
For the precise determination of orientations in polycrystalline materials, electron backscatter diffraction (EBSD) requires a consistent calibration of the diffraction geometry in the scanning electron microscope (SEM). In the present paper, the variation of the projection center for the Kikuchi diffraction patterns which are measured by EBSD is calibrated using a projective transformation model for the SEM beam scan positions on the sample. Based on a full pattern matching approach between simulated and experimental Kikuchi patterns, individual projection center estimates are determined on a subgrid of the EBSD map, from which least-square fits to affine and projective transformations can be obtained. Reference measurements on single-crystalline silicon are used to quantify the orientation errors which result from different calibration models for the variation of the projection center.