Ingenieurwissenschaften und zugeordnete Tätigkeiten
Filtern
Dokumenttyp
Sprache
- Englisch (2)
Referierte Publikation
- ja (2) (entfernen)
Schlagworte
- Absolute fluorescence (1)
- Application (1)
- Automated synthesis (1)
- Fluorescence (1)
- Green synthesis (1)
- Integrating sphere spectroscopy (1)
- Nano (1)
- Particle (1)
- Perovskites (1)
- Quality assurance (1)
Organisationseinheit der BAM
A new “green” and mild synthesis of highly stable microcrystalline Cs2AgxNa1-xBiyIn1-yCl6 (CANBIC) perovskites under ambient conditions was developed that is scalable to the multi-gram production. Under UV illumination, the CANBIC perovskites emit intense broadband photoluminescence (PL) with a quantum yield (QY) of 92% observed for x = 0.35 and y = 0.01-0.02. The combination of strong UV absorbance and broadband visible emission, high PL QY, and long PL lifetimes of up to 1.4 μs, along with an outstanding stability makes these CANBICs a promising material class for many optical applications.
We present colloidally stable and highly luminescent ZnxCd1_xS:Mn/ZnS core–shell nanocrystals (NCs) synthesized via a simple non-injection one-pot, two-step synthetic route, which can be easily upscaled. A systematic variation of the reaction component, parameters and thickness of the ZnS shell yielded doped nanocrystals with a very high photoluminescence quantum yield (pl) of 70%, which is the highest value yet reported for these Mn-doped sulfide-semiconductor NCs. These materials can be synthesized with high reproducibility in large quantities of the same high quality, i.e., the same pl using accordingly optimized reaction conditions. The application of these zero-reabsorption high quality NCs in the light conversion layers, deposited on top of a commercial monocrystalline silicon (mono-Si) solar cell, led to a significant enhancement of the external quantum efficiency (EQE) of this device in the ultraviolet spectral region between 300 and 400 nm up to ca. 12%. EQE enhancement is reflected by an increase in the power conversion efficiency (PCE) by nearly 0.5 percentage points and approached the theoretical limit (0.6%) expected from down-shifting for this Si solar cell. The resulting PCE may result in a BoM (bill of materials) cost reduction of app. 3% for mono-Si photovoltaic modules. Such small but distinct improvements are expected to pave the road for an industrial application of doped semiconductor NCs as cost-effective light converters for silicon photovoltaic (PV) and other optoelectronic applications.