Analytische Chemie
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- EBSD (2)
- X-ray microdiffraction (2)
- Antiphase boundary (1)
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- Backscattered electrons (1)
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Microstrain distributions were acquired in functional thin films by high-resolution X-ray microdiffraction measurements, using polycrystalline CuInSe2 thin films as a model system. This technique not only provides spatial resolutions at the submicrometre scale but also allows for analysis of thin films buried within a complete solar-cell stack. The microstrain values within individual CuInSe2 grains were determined to be of the order of 10^-4. These values confirmed corresponding microstrain distribution maps obtained on the same CuInSe2 layer by electron backscatter diffraction and Raman microspectroscopy.
The investigation of the microstructure in functional, polycrystalline thin films is an important contribution to the enhanced understanding of structure–property relationships in corresponding devices. Linear and planar defects within individual grains may affect substantially the performance of the device. These defects are closely related to strain distributions. The present work compares electron and X-ray diffraction as well as Raman microspectroscopy, which provide access to microstrain distributions within individual grains. CuInSe₂ thin films or solar cells are used as a modelsystem. High-resolution electron backscatter diffraction and X-ray microdiffraction as well as Ramanmicrospectroscopy were applied for this comparison. Consistently, microstrain values were determined of the order of 10⁻⁴ by these three techniques. However,only electron backscatter diffraction, X-ray microdiffraction exhibit sensitivities appropriate for mapping local strain changes at the submicrometer level within individual grains in polycrystalline materials.
Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale are in demand, especially for a detailed understanding of extended-defects and their influence on the properties of materials. We have applied the electron
backscatter diffraction (EBSD) technique in a scanning electron microscope to non-destructively
characterise and quantify antiphase domains (APDs) in GaP thin films grown on different (001)Si substrates with different offcuts. We were able to image and quantify APDs by relating the asymmetrical intensity distributions observed in the EBSD patterns acquired experimentally and comparing the same with the dynamical electron diffraction simulations. Additionally mean angular error maps were also plotted using automated cross-correlation based approaches to image APDs.
Samples grown on substrates with a 4° offcut from the [110] do not show any APDs, whereas samples grown on the exactly oriented substrates contain APDs. The procedures described in our work can be
adopted for characterising a wide range of other material systems possessing non-centrosymmetric point groups.
We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations.