Analytische Chemie
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Scanning Electron Microscopy (SEM) represents the mostly widespread method available in analytical laboratories dedicated to the characterization of physical properties such as morphology of various solid materials from ‘micro-’ down to the nanometre scale. The use of secondary electrons excited by a sharply, nm-focussed primary electron beam enables at any modern SEM to image objects with high in-depth and lateral sensitivity, i.e. with high spatial resolution. Hence, e. g. nanoparticles (NPs) are able to be easily characterized with respect to their individual size and shape, but also to the morphology of their surface.
By preparing the nano-objects on thin membranes as electron transparent samples it is possible to perform electron microscopy in the transmission mode (TEM and TSEM). The corresponding transmission (i.e. mass-thickness) contrast reveals in-depth information, but is also well suited for dimensional measurements in the 2D projection image. Both the surface sensitive mode and the transmission one are meanwhile available at any modern SEM. If an X-ray spectrometer is attached to an electron microscope, it is possible to analyse the characteristic X-rays induced by electron bombardment. Most electron microscopes have attached an energy dispersive X-ray spectrometer (EDX) so that EDX elemental maps can be carried out. Recent technological developments of high throughput EDS detectors and their advantages regarding high-resolution X-ray analysis down to the nm range are reviewed.
High-resolution micrographs (SEM, TSEM, TEM) and corresponding X-ray elemental maps on various representative nanoparticles, but also layered samples prepared in cross-section, will be presented and discussed. The importance of selecting the best suited analysis conditions will be highlighted. Also other, often challenging, topics such as sample preparation and image data processing will be critically addressed by practical examples. Further analytical techniques able to be employed at an electron microscope, like cathodoluminescence (CL) or micro-X-ray fluorescence (µXRF) will be briefly surveyed.
The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies, the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.
The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.
The test material EDS-TM001 together with an accompanying software package, “EDX spectrometer check”, have been made available in 2009 by BAM to be employed by EDS (energy-dispersive X-ray spectrometer) users to check the performance of an EDS attached to the SEM. Particularly for test laboratories operating under accreditation schemes like ISO/IEC 17025, a periodical control of the critical instrumental parameters in end-user laboratories is required. With EDS-TM001 or EDS-TM002 (second generation) test material, this periodical check is simplified to the acquisition of only one 10 kV spectrum. The software “EDX spectrometer check” is destined to evaluate automatically this spectrum and determine the performance of the EDS in terms of energy resolution and calibration, as well as possible alteration of low-energy Efficiency due to detector contamination. Energy resolution can be compared with the specified values according to the international ISO standard ISO 15632:2012. EDS-TM is a synthetic material consisting of a 6 μm thick layer of C, Al, Mn, Cu and Zr deposited on a steel (in case of EDS-TM001) or silicon (in case of EDS-TM002) substrate. The chemical composition of EDS-TM was chosen such as to give nearly equal intensities of the low energy lines in a 10 kV spectrum, thus, making it very sensitive against spectrometer efficiency changes. Meanwhile, about 150 laboratories use the EDS-TM001 or EDS-TM002 test material for the periodical check of their EDS. A detailed description of the test material and software together with examples of application was published recently. New results and gained experiences will be presented as well. When the FWHM of the X-ray lines in the EDS-TM spectrum are determined, the spectrum background must be subtracted accurately. The applied physical background subtraction procedure is robust and takes into account the transmission of the detector window. While the previous version considers only Moxtek AP windows, the new version includes selection of silicon Nitride window and the case of windowless detector. Moreover, the new version allows importing of spectra in Bruker spx-format and EMSA/MSA files from EDAX TEAM software.
Windowless detectors have been also tested demonstrating long-term stability after repeated heating and cooling cycles. In this case, the appropriate Background subtraction is decisive for accurate detector characterization. Detailed results will be presented.