Analytische Chemie
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- Plasma enhanced chemical vapor deposition (2) (entfernen)
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The approach, which was developed earlier for modeling chemical reactions in laser induced plasmas, is applied to radio-frequency discharge plasmas. The model is based on the assumption that all ionization processes and chemical reactions are at local thermodynamic equilibrium. A chemical composition of an argon-hydrogen plasma with an Addition of boron trichloride is studied as a function of plasma temperature and mole ratio H2∕BCl3. It is established that more than twenty simple and composite molecules and ions can be formed in the course of chemical reactions. The results are compared with those obtained earlier by means of another equilibrium model that uses ab-initio quantum chemical computations of thermochemical and kinetic data and a 0D thermochemical quilibrium solver.
Probe diagnostics is used to determine the electron temperature and electron number density in a low pressure inductively coupled plasma (ICP) ignited in the mixture of SiF4, Ar and H2. Emission spectra of mixtures with different stoichiometry of components are investigated and the electron density distribution function (EDDF) is estimated. The optimal conditions for high conversion of SiF4 into Si are found by studying the dependence of the yield of silicon upon the ratio of reagents. The maximum achieved yield of silicon is 85% under the optimal conditions. Based on the analysis of IR and MS spectra of exhaust gases, 5% of initial SiF4 converts into volatile fluorosilanes. A rate of production of Si is 0.9 g/h at the energy consumption 0.56 kWh /g.