Analytische Chemie
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Automated electron backscatter diffraction (EBSD) is generally unable to distinguish between multiple cubic phases in a specimen without additional information, such as that obtained by simultaneous energy dispersive X-ray spectroscopy (EDS). Small particles of phases with relatively similar compositions push the limits of phase identification using simultaneous EBSD and EDS, and a mismatch exists between the spatial resolutions of these two techniques due to them having different electron interaction volumes. In a recent paper, the present authors explored using backscatter detectors mounted on top of the EBSD detector to obtain atomic number (Z) contrast images that could be used for phase segmentation in cases where the results from the EBSD and EDS signals remain ambiguous. In the present work, we show that similar information can be obtained from the raw EBSD patterns themselves at higher spatial resolution than was obtained from the backscatter detectors, with the additional advantage of having no spatial mismatch between the data collection grids.
We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations.