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The principles of (Hard) X-ray photoelectron spectroscopy and some application in the field of (core-shell) nanoparticles will be presented. The presentation should answer hoe to get reliable results. Furthermore, examples of the correlation between physical-chemical measurments and toxicological results are given which are crucial for the risk assessment of nanoparticles.
Climate change and increasing demand for electricity require the use of power electronics based on new wide bandgap (WBG) compound semiconductors. Power electronics devices are used in numerous application areas to control and convert electric energy. These may include generation and distribution of renewable energy for green hydrogen, electrification of transport or 5G communication. WBG electronics have much higher efficiency than the silicon-based ones and can operate at higher power densities, voltages, temperatures and switching frequencies with low energy losses. However, defects in the semiconductors can considerably affect the performance of power electronic devices or make their operation even impossible. The presentation will show the application of spectroscopic and imaging ellipsometry as well as white light interference microscopy for defect characterisation in SiC, GaN and Ga2O3 over a wide wavelength range.
We used parameterized modelling of ellipsometric transfer parameters to determine the dielectric properties of bulk materials and thin layers. Imaging ellipsometry offers more information and is an advanced variant of optical microscopy, combining the lateral resolution of optical microscopy with the extreme sensitivity to surface and interface effects of ellipsometry. Surface topography and morphology of different types of defects were additionally investigated with imaging white light interference microscopy. Modern electronic thin film components require complex surface analysis methodologies and hybrid metrology. Hybrid measurement techniques enable fast and non-destructive traceable characterisation of thin film compound semiconductors as well as accurate detection and identification of defects. This methodical approach leads to a better understanding of the materials themselves and of the defect formation mechanisms during manufacturing.
This work aims to enable highly reproducible manufacturing of compound semiconductor power electronics as well as operation monitoring to ensure failure-safety of electronic systems in power electronic devices.
Ellipsometry is a very powerful tool used for accurate material investigation in a wide wavelength range. It is a non-destructive and fast method. Imaging ellipsometry as a combination of optical microscopy and ellipsometry enables spatially resolved measurements when determining the layer thickness and dielectric properties of thin layers. It is known for its high polarisation sensitivity and high contrast for the surface structures. In this contribution we show the application of the imaging ellipsometry for detection of defects in energy materials and quality validation of possible reference materials for nano-electronics.
Defects in wide bandgap semiconductors, in homoepitaxial SiC and heteroepitaxial GaN layers on transparent SiC substrates, can be successfully detected and classified by means of imaging ellipsometry. Correlation of imaging ellipsometry results with results from complementary techniques such as white light interference microscopy as well as atomic force microscopy contribute to understanding of surface topography and defect formation mechanisms. We discuss the potential of different methods for analysing ellipsometric map data for monitoring the defect densities.
Electric properties of materials at the nanoscale can be investigated by means of scanning probe microscopy methods such as scanning microwave microscopy and conductive atomic force microscopy. However, development of new robust and easy-to-use calibration methods and calibration standards is essential to increase the traceability of these methods and allow their broad application in industry. We show how imaging spectroscopic ellipsometry can be used for development and monitoring of processing quality of patterned reference samples based on indium tin oxide (ITO) layer with different thickness and conductivity.
X-ray photoelectron-spectroscopy (XPS) allows simultaneous irradiation and damage monitoring. Although water radiolysis is essential for radiation damage, all previous XPS studies were performed in vacuum. Here we present near-ambient-pressure XPS experiments to directly measure DNA damage under water atmosphere. They permit in-situ monitoring of the effects of radicals on fully hydrated double-stranded DNA. Our results allow us to distinguish direct damage, by photons and secondary low-energy electrons (LEE), from damage by hydroxyl radicals or hydration induced modifications of damage pathways. The exposure of dry DNA to x-rays leads to strand-breaks at the sugar-phosphate backbone, while deoxyribose and nucleobases are less affected. In contrast, a strong increase of DNA damage is observed in water, where OH-radicals are produced. In consequence, base damage and base release become predominant, even though the number of strand-breaks increases further. Furthermore, first data about the degradation of single-stranded DNA binding-proteins (G5P / GV5 and hmtSSB) under vacuum and NAP-XPS conditions are presented.
International standards describing reliable protocols will facilitate the commercialization of graphene and related 2D materials. One physico-chemical key property next to flake size and thickness is the chemical composition of the material. Therefore, an ISO standard is under development with X-ray photoelectron spectroscopy having a prominent role. With its information depth of around 10 nm which is the similar length scale as the thickness as of particles of 2D materials consisting of a few monolayer XPS seems to be highly suitable for this purpose. Different sample preparation methods like pressing the powders onto adhesive tapes, into recesses, or into solid pellets result in inconsistencies in the quantification. For the validation of the quantification with XPS an interlaboratory comparison was initiated under the auspice of the “Versailles Project on Advanced Materials and Standards” (VAMAS). First results confirm that the sample preparation method (pellet vs. powder) influences the quantification results clearly.
International standards describing reliable protocols will facilitate the commercialization of graphene and related 2D materials. One physico-chemical key property next to flake size and thickness is the chemical composition of the material. Therefore, an ISO standard is under development with X-ray photoelectron spectroscopy having a prominent role. With its information depth of around 10 nm which is the similar length scale as the thickness as of particles of 2D materials consisting of a few monolayer XPS seems to be highly suitable for this purpose. Different sample preparation methods like pressing the powders onto adhesive tapes, into recesses, or into solid pellets result in inconsistencies in the quantification. For the validation of the quantification with XPS an interlaboratory comparison was initiated under the auspice of the “Versailles Project on Advanced Materials and Standards” (VAMAS). First results confirm that the sample preparation method (pellet vs. powder) influences the quantification results clearly. Considering this effect, a good agreement of the results from the different participants were observed. Similar results were observed for raw, N- and F-functionalized graphene.
Since its isolation, graphene has received growing attention from academia and industry due to its unique properties. Promising opportunities for applications are discussed in different field like electronics and optoelectronics, detection, and sensing devices, biosystems or chemical and environmental corrosion inhibition. Here, functionalization with elements like oxygen, nitrogen or fluorine can broaden the application, for example in composite materials. However, lack of generally accepted operation procedures hinders the commercialization, the so-called “what is my material” barrier. Therefore, first efforts were done to develop common, reliable, and reproducible ways to characterize the morphological and chemical properties of the industrially produced material.
In this contribution, our efforts in the development of reliable chemical characterizations protocols for functionalized graphene are presented. An ISO standard for the chemical characterization of graphene-related (GRM) is under development with X-ray photoelectron spectroscopy (XPS) having a prominent role. With its information depth of around 10 nm, which is the similar length scale as the thickness of particles of 2D materials consisting of a few monolayers, XPS seems to be highly suitable for the quantitative analysis of (functionalized) GRM. Thereby, different sample preparation methods like pressing the powders onto adhesive tapes, into recesses, or into solid pellets result in inconsistencies in the quantification. Furthermore, different morphologies like stacks of graphene layers (left figure) or irregular particles (right figure) lead to different analysis results for the chemical composition.
For the validation of the quantification with XPS and the further development of standards an international interlaboratory comparison was initiated under the head of the “Versailles Project on Advanced Materials and Standards” (VAMAS). First results are reported showing the suitability of the protocols. Finally, the XPS results are compared with the elemental composition results obtained after quantification with energy-dispersive X-ray spectroscopy (EDS) as a fast analytical method which is usually combined with electron microscopy.
Phased-Array-Prüfköpfe für luftgekoppelte Ultraschallprüfung auf Basis von zellulären Kunststoffen
(2023)
Luftgekoppelte Ultraschallprüfung setzt sich immer häufiger gegen die konventionelle Ultraschallprüfung von Leichtbaukomponenten durch, und zwar in vielen Industriezweigen von der Holzindustrie bis zur Luftfahrt. aWährend die Phased-Array-Technik mittlerweile zu dem industriellen Standard im Bereich der Prüfung mit Ankopplung gehört, wird luftgekoppelte Ultraschallprüfung meist mit zwei Wandlern in Durchschallung durchgeführt. Deswegen werden Vorteile der Phased-Array-Technik wie beispielsweise elektronische Fokussierung oder Schwenkung des Einschallwinkels für luftgekoppelte Prüfung selten genutzt.
In diesem Beitrag werden die laufenden Arbeiten an der Entwicklung eines neuen Phased-Array-Geräts vorgestellt, mit dem Schwerpunkt an der Charakterisierung der Prüfköpfe und ihrer Schallfelder. Das Gerät besteht aus einem linearen Phased-Array-Prüfkopf, einer Sende- und einer Empfangseinheit. Die Hauptinnovation unserer Arbeit ist die Anwendung von zellulären Kunststoffen für den Bau eines Arrays, wobei der Sender mit Hochspannung von ca. 1500 V angeregt wird. Geladene zelluläre Polymere werden auch Ferroelektrete oder Piezoelektrete genannt. Sie weisen einen sehr niedrigen Elastizitätsmodul und dadurch eine niedrige akustische Impedanz auf, so dass auf den Einbau von Anpassschichten verzichtet werden kann.
Eine sehr niedrige mechanische Kreuzkopplung bei Ferroelektreten ermöglicht eine unabhängige Anregung einzelner Elemente, was bei Piezokompositen deutlich schwieriger wäre. Die Entwicklung der Array-Prüfköpfe wurde durch Berechnungen des Schallfeldes unterstützt, die auf Punktquellensynthese basieren. Die beabsichtigte Anwendung von Phased-Array-Prüfköpfen und des Prüfsystems sind die Durchschallung mit Fokussierung, elektronischer Scan und die Schwenkung des Einschallwinkels zur Anregung von geführten Wellen, angewandt an carbonfaserverstärkten Kunststoffen und ähnlichen Materialien. Die Anwendung von geführten Wellen bietet die Perspektive, Bauteile mit einseitiger Zugänglichkeit zu prüfen.