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Photophysical and mechanistic studies, the comparison of different emitter classes, and the rational design of the next generation of molecular and nanoscale reporters require quantitative photoluminescence measurements and the reliable determination of the key performance parameter photoluminescence quantum yield (QY), i.e., the number of emitted per absorbed photons. This is of special importance for all photoluminescence applications in the life and material sciences in the UV/vis/NIR/SWIR. To improve the reliability and comparability of photoluminescence and QY measurements across laboratories, pitfalls, achievable uncertainties, and material-specific effects related to certain emitter classes must be explored. Also, suitable protocols and reference materials are needed which have been validated in interlaboratory comparisons for different wavelength regions and transparent and scattering luminophores.[1] Based on absolute and relative photoluminescence measurements of functional dyes and nanomaterials like semiconductor quantum dots and rods, spectrally shifting lanthanide upconversion nanocrystals, perovskites, and YAG:Cer converter materials, reliable methods for determining QY of transparent and scattering luminophores, nonlinear emitters, and solid luminescent nanomaterials have been developed.[2,3] Thereby, material- and method-related uncertainties of relative and absolute QY measurements and achievable uncertainties could be quantified for linear and nonlinear UV/vis/NIR/SWIR emitters and lately for also luminescent and scattering materials and solid phoshors, here in an interlaboratory comparison of three labs utilizing integrating sphere spectroscopy.[4,5] In addition, to provide simple tools for a better comparability of QY measurements, recently, a first set of UV/vis/NIR quantum yield standards has been developed and certified with complete uncertainty budgets.[6] In the following, the outcome of these studies will be presented, thereby addressing common pitfalls and providing recommendations on the performance of reliable QY measurements of linear and non-linear emitters in transparent, scattering, and solid samples.
Photophysical and mechanistic studies, the comparison of different emitter classes, and the rational design of the next generation of molecular and nanoscale reporters require quantitative photoluminescence measurements and the reliable determination of the key performance parameter photoluminescence quantum yield (QY), i.e., the number of emitted per absorbed photons. This is of special importance for all photoluminescence applications in the life and material sciences in the UV/vis/NIR/SWIR.
Following points are addressed in this contribution: Advantages of correlative analysis in electron microscopy; Measurement principle of the different electron microscopy modes used; Presentation of the nanomaterials used for this study; Role of sample preparation; and, with particular description, the Sequence kV-variation with InLens SE & transmission SEM detection of the same field-of-view.
A lack of harmonised terminology hinders accurate description of many nano-object properties. An overview on nanoscale reference materials for environmental , health and safety measurements has been provided by Stefaniak et al. Since then several nanoscale reference materials were produced as finely dispersed nanoparticles, including catalytic active silver nanoparticles and iron oxide nanocubes. Polymeric nanoparticles made of polypropylene (PP), polyethylene (PE) and poly(ethylene terephthalate) (PET) are ongoing reference materials projects. A first study on PP has shown that mechanical breakdown of macroscopic PP towards nano PP is possible. Hereby the nano PP is stabilized by a strongly negative zeta potential of – 44 mV. This provides a long-term stability of the nanoparticles at ambient conditions in cases of low ionic strength. Since this nano PP has no added colloidal stabilizers, we suggest this as a potential reference materials candidate for reliable determination PP nanoplastics. Moreover, the nano PP may function as a reference for the estimation of possible toxic effects of nanoplastics. Efforts in producing nano PP labeled with ultra-small gold nanoparticles are reported.
Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines.
The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing.
There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation.
We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials.
If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis.
The ACCORDs project, funded through Horizon Europe, is pioneering a novel approach to investigate Graphene Family Materials (GFMs) through image analysis. Our aim is to unveil how these materials might influence health and the environment. To achieve this, we are developing a platform designed for the easy retrieval, access, sharing, and utilisation of GFM data and the coordination between biological and physico-chemical data formats. Integral to this platform is an OMERO-based library for image storage, alongside data collection forms and image analysis tools. Efforts are underway to streamline the process for researchers to upload and disseminate their findings, manage information within a database and navigate the data with ease. Adhering to REMBI guidelines, which set the standard for annotating biological images with metadata, we ensure our data collection is comprehensive and adheres to established best practices. Initially, we are employing thresholding and basic machine learning techniques for image segmentation, laying the groundwork for advanced analysis through deep learning to gain more profound insights. Upon completion, the project will deliver a comprehensive platform facilitating efficient data and image management concerning GFMs. This platform will enable the straightforward discovery and use of protocols and results, all organised in accordance with the FAIR principles – Findable, Accessible, Interoperable, and Reusable.
This initiative is poised to significantly impact materials science, enhancing our comprehension of the safety and environmental implications of 2D materials.
The recently certified reference material (CRM) BAM-N012 as cubical iron oxide FeOx nanoparticles (NPs) of 8 nm area equivalent square edge length (ESL) and the RM candidate BAM-N013 as nearly spherical NPs of 22 nm size were analyzed in detail by electron microscopy (EM).
For the metrological characterization with SEM, STEM in SEM and TEM, the understanding of the imaging contrasts and sensitivities, and the correct interpretation of the (art)effects which are inherent to each detection mode is necessary.
The same sample areas with NPs deposited on a TEM grid were analyzed by two SEM acquisition modes, i. e. SE InLens and STEM in SEM using a dedicated transmission sample holder, and further, correlatively, analyzed with TEM.
With increasing kV, SE InLens shows increasing particle size (unless overcharging at the particle boundaries is filtered), as a known effect. For STEM-in-SEM the particle size decreases significantly and individual particles are identified easier (at 2 kV only a few single particles can be detected automatically).
❑ Documentation of the sample preparation and measurement conditions (including optimization process) is important for reproducibility.
❑ Plasma cleaning, analysis in the transmission mode at SEM is recommended for FeOx NPs.
❑ Selection of the threshold algorithm can significantly alter the reported ECD.
In well annealed thin polymer films with non-repulsive polymer/substrate interaction with a substrate an irreversibly adsorbed layer is expected to form. These adsorbed layers have shown a great potential for technological applications [1]. However, the growth kinetics and the molecular mobility of the adsorbed layer is still not fully understood. This concerns also the influence of the adsorbed layer on the thickness dependence of the glass transition temperature of thin films. This is partly due to the difficult accessibility of these layers in thin films. Here, the irreversibly adsorbed layers of semi-rigid mail chain polymers like polycarbonate or polysulfone are revealed by solvent-leaching experiments. First, the growth kinetics of these layers is investigated as a function of annealing time. The film thickness, topography and the quality of the adsorbed layer is controlled by Atomic Force Microscopy (AFM). Secondly, the molecular mobility of the adsorbed layer is investigated by Broadband Dielectric Spectroscopy (BDS). A developed nanostructured capacitor arrangement is employed to measure the layer with a free surface. In addition to the dielectric experiments, spectroscopic Ellipsometry measurements are carried out to estimate the glass transition of the thin films. The thickness dependence of the glass transition of the thin films is correlated with the adsorbed layer [2,3].
Acknowledgments
D. Hülagü and G. Hidde thanked for the help with the ellipsometry measurements.
Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function.
In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters.
Electron-beam-induced conversion of materials in a transmission electron microscope uses the high power density of a localized electron beam of acceleration voltages above 100 kV as an energy source to transform matter at the sub-micron scale. Here, the e-beam-induced transformation of precursor microparticles employing a low-energy e-beam with an acceleration voltage of 30 kV in a scanning electron microscope is developed to increase the versatility and efficiency of the technique. Under these conditions, the technique can be classified between e-beam lithography, where the e-beam is used to mill holes in or grow some different material onto a substrate, and e-beam welding, where matter can be welded together when overcoming the melting phase. Modifying gold microparticles on an amorphous SiOx substrate reveals the dominant role of inelastic electron-matter interaction and subsequent localized heating for the observed melting and vaporization of the precursor microparticles under the electron beam. Monte-Carlo scattering simulations and thermodynamic modeling further support the findings.