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Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity.
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
Deep understanding of the effects associated with fabrication parameters and their influence on the resulting structures shape is essential for the further development of direct laser writing (DLW). In particular, it is critical for development of reference materials, where structure parameters are precisely fabricated and should be reproduced with use of DLW technology. In this study we investigated the effect of various fabrication and preparation parameters on the structural precision of interest for reference materials. A well-studied photo-curable system, SZ2080 negative photo-resist with 1 wt.% Michler's ketone (Bis) photo-initiator, was investigated in this work. The correlation between applied laser power, laser velocity, fabrication direction on the deviations in the structure shape were observed by means of white light interferometry microscopy. Moreover, influence of slicing and hatching distances as well as prebake time were studied as function of sample shape. Deviations in the structure form between the theoretically expected and the one detected after DLW fabrication were observed in the range up to 15%. The observed shape discrepancies show the essential importance of fine-tuning the fabrication parameter for reference structure production.