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Thermodynamic bulk phase diagrams have become the roadmap used by researchers to identify alloy compositions and process conditions that result in novel materials with tailored microstructures. On the other hand, recent progress in experimental atomic-scale characterization techniques allows one to study the local chemical composition at individual defects such as interfaces, grain boundaries, dislocations and surfaces. They show that changes in the alloy composition can drive not only transitions in the bulk phases present in a material, but also in the concentration and type of defects they contain. Defect phase diagrams, using chemical potentials as thermodynamics variables, provide a natural route to study these chemically driven defects. Our results show, however, that the direct application of thermodynamic approaches can fail to reproduce the experimentally observed defect formation.
Therefore, we extend the concept to metastable defect phase diagrams to account for kinetic limitations that prevent the system from reaching equilibrium. We use ab initio calculations based on density functional theory to quantify the extension of regions where defect formation is expected. We successfully applied this concept to explain the formation of large concentrations of planar defects in supersaturated Fe2Nb Laves phases. In addition, we identify in a joint study with experiments conditions and structures in Mg-Al-Ca alloys for defect phase occurrence. The concept offers new avenues for designing materials with tailored defect structures.
Silicon is the material responsible for most of the technological developments during the past century, making it one of the most studied materials along different disciplines. However, there are still unturned stones regarding its superficial re-solidification after femtosecond laser-induced local melting. In this presentation, we report irradiation experiments with single femtosecond pulses (790 nm, 30 fs) with a spatially Gaussian distribution on two different types of silicon with orientations <111> and <100>. The surface modifications were studied in detail via different techniques, including optical microscopy, atomic force microscopy, spectroscopic imaging ellipsometry, energy dispersive X-ray spectroscopy and high-resolution transmission electron microscopy. We quantitatively estimate the resulting radial amorphous layer depth profiles with maximum thicknesses around some tenths of nanometers for fluences in between the melting and ablation thresholds. In particular, spectroscopic imaging ellipsometry (SIE) allowed fast data acquisition using multiple wavelengths to provide experimental measurements for calculating the nanometric radial amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. SIE proved to be capable of detecting and measuring nanometric structural and chemical modifications (oxidation) on the studied laser spots. The accuracy of the SIE-based calculations is verified experimentally by characterizing an in-depth material lamella via high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). For completeness, we present a mathematical modelling for the melt layer thickness considering different optical absorption processes including one photon absorption, two photon absorption and free-carrier absorption, highlighting the relevance of the latter one in the femtosecond laser-induced melting of silicon.