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Auger electron spectroscopy
(2020)
An introduction in the application of Auger Electron Spectroscopy to surface chemical analysis of nanoparticles is given. Auger Electron Spectroscopy is a mature method in the field of surface chemical analysis. The chapter addresses the physical basis of the method, the principal design of recent instruments together with modes of operation and options for the presentation of spectra, as well as different approaches for qualitative (including identification of chemical species) and quantitative surface analysis of elements. An application paragraph on surface chemical analysis of nanoparticles by AES or SAM introduces the different measurement approaches and sample preparation strategies applied by analysts. The analysis of nanoparticle ensembles, the so-called selected point analysis where a narrow primary electron beam is centered on an individual nanoparticle, and chemical mapping of individual nanoparticles (or a line scan across) are addressed. Existing literature is reviewed and informative case studies presented. Limitations and pitfalls in the application of AES in surface chemical analysis of nanoparticles are also addressed.
In this article the question of the certification of calibration samples for the characterisation of advanced thin film materials is addressed within the framework of reliable process control or quality management purposes. Reference measurement techniques can be used in order to address the gap in appropriate certified reference materials (CRMs) for thin film analyses. They allow for qualifying out-of-production samples originating from an operating production line as calibration samples. As a template for this procedure, CIGS [Cu(In,Ga)Se2] layers, that are absorber layers for high efficiency thin-film solar cells, have been used for establishing and validating reference-free X-ray fluorescence (XRF) analysis and Auger-electron spectroscopy (AES) as reference measurement techniques. The focus was on determining the average mole fractions in the CIGS layers obtaining results traceable to the SI unit system. Reference-free XRF is physically traceable and is based upon radiometrically calibrated instrumentation and knowledge of atomic fundamental data. Sputter-assisted AES can be established as a chemically traceable method after careful calibration using a certified reference material (CRM) based on a total number counting method.
Control of functionalization of supports for subsequent assembly of titania nanoparticle films
(2018)
For self‐assembling of TiO2 nanoparticles in multiple layers by layer‐by‐layer deposition to be applied to TiO2 thin films with defined and homogeneous thickness for large‐scale applications, the proper functionalization of substrate surface is a prerequisite to guarantee sufficient adhesion.
The substrates selected and tested in the present paper were conductive, fluorine‐doped tin oxide (FTO) glass, nonconductive silica glass, and titanium alloy. The current study focusses on the analytical control of the stepwise functionalization of the substrates with 3‐aminopropyltriethoxysilane and glutaraldehyde (GA) for both the FTO glass and silica glass and with 3‐aminepropyl phosphonic acid and GA for Ti alloy. The analyses have been conducted by means of surface sensitive methods, X‐ray photoelectron spectroscopy, Auger electron spectroscopy, and time‐of‐flight secondary ions mass spectrometry. Chemical composition of surface of functionalized substrates shows differences in the degree and type of modification in dependence on substrate. It could be demonstrated that the best functionalized substrates were the conductive FTO glasses. The analysis of the functionalized Ti substrates has revealed that the surface coverage with 3‐aminepropyl phosphonic acid and GA molecules is an inhomogeneous one, and further optimization of the two‐step functionalization on the Ti alloy substrate is necessary.
The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1-xAs and InxGa1 xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm. Calibration distances, grating periods and stripe widths have been certified by TEM with traceability to the length unit. The combination of gratings, isolated narrow stripes and sharp edges of wide stripes offers a plenty of options for the determination of lateral resolution, sharpness and calibration of length scale at selected settings of imaging surface analytical instruments. The feasibility of the reference material for an analysis of the lateral resolution is demonstrated in detail by evaluation of ToF-SIMS, AES and EDX images. Other applications developed in the community are summarized, too. BAM-L200 fully supports the implementation of the revised International Standard ISO 18516 (in preparation) which is based on knowledge outlined in the Technical Report ISO/TR 19319:2013.
High resolution ToF-SIMS imaging of deuterium permeation and cracking in duplex stainless steels
(2017)
Fundamental understanding and elucidation of hydrogen assisted degradation and trapping mechanisms is dependent on sufficient imaging techniques for respective hydrogen interactions, in particular with multi-phase metallic microstructures. The present work shows the progress in elucidating the deuterium behavior in austenitic-ferritic duplex stainless steels under the consideration that deuterium behaves in many ways similarly to hydrogen. A novel combination of deuterium permeation and in-situ Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) imaging technique is compared with post charging ToF-SIMS imaging experiments. As a step beyond state-of-the-art, integration of chemo-metric and high resolution structural characterization techniques with computational multivariate data analysis (MVA) and data fusion is presented.
Hydrothermal synthesis of anatase TiO2 nanosheets with a high fraction of exposed {001} facets and related high photocatalytic activity - as an alternative to bipyramidal anatase TiO2 nanoparticles mainly exposing the {101} facets. The scope of the material preparation work is the thermal reduction of residual fluorides from HF (capping agent) induced during the synthesis of TiO2 nanosheets by calcination at 873K. The analytical task consists of detection and localization of fluorine present at the surface and/or in the bulk of TiO2 nanosheets before and after calcination by SEM/EDX, Auger electron spectroscopy and ToF-SIMS.
Parameters of TiO2 coatings can greatly influence their final performance in largescale applications such as photocatalytic measurements, orthopedic and/or dental prostheses, cell cultures, and dye-sensitized solar cells. From different film deposition procedures, self-assembly of TiO2 NPs in multiple layers was selected for systematic characterization. EDX, AES and ToF-SIMS analysis have been carried out in order to evaluate the functionalization of several types of TiO2 NPs differing in size, shape and surface area.
The chemical characteristics of two different types of laser-induced periodic surface structures (LIPSS), so-called high and low spatial frequency LIPSS (HSFL and LSFL), formed upon irradiation of titanium surfaces by multiple femtosecond laser pulses in air (30 fs, 790 nm, 1 kHz), are analyzed by various optical and electron beam based surface analytical techniques, including micro-Raman spectroscopy, energy dispersive X-ray analysis, X-ray photoelectron spectroscopy, and Auger electron spectroscopy. The latter method was employed in a high-resolution mode being capable of spatially resolving even the smallest HSFL structures featuring spatial periods below 100 nm. In combination with an ion sputtering technique, depths-resolved chemical information of superficial oxidation processes was obtained, revealing characteristic differences between the two different types of LIPSS. Our results indicate that a few tens of nanometer shallow HSFL are formed on top of a ∼150 nm thick graded superficial oxide layer without sharp interfaces, consisting of amorphous TiO2 and partially crystallized Ti2O3. The larger LSFL structures with periods close to the irradiation wavelength originate from the laser-interaction with metallic titanium. They are covered by a ∼200 nm thick amorphous oxide layer, which consists mainly of TiO2 (at the surface) and other titanium oxide species of lower oxidation states underneath.
In the present work, the influence of deuterium on the microstructure of a duplex stainless steel type EN 1.4462 has been characterized by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) supported by scanning electron microscopy (SEM), focused ion beam (FIB), electron back scattered diffraction(EBSD) and energy dispersive x-ray (EDX) investigations. Characterization has been carried out before and after electrochemical charging with deuterium which has been used as a tracer, due to its similar behavior to hydrogen in the steel microstructure. In a first approach, the distribution of the deuterium occurring at temperatures above 58 °C has been visualized. Further it turned out that sub-surface micro blisters are formed in the ferrite-austenite interface, followed by the formation of needle shaped plates and subsequent cracking at the ferrite surface. In the austenite phase, parallel cracking alongside twins and hexagonal close packed (martensitic) regions has been observed. In both phases and even in the apparent interface, cracking has been associated with high deuterium concentrations, as compared to the surrounding undamaged microstructure. Sub-surface blistering in the ferrite has to be attributed to the accumulation and recombination of deuterium at the ferrite-austenite interface underneath the respective ferrite grains and after fast diffusing through this phase. Generally, the present application of chemometric imaging and structural analyses allows characterization of hydrogen assisted degradation at a sub-micron lateral resolution.
CCQM key comparison K-129 for the quantitative analysis of Cu(In,Ga)Se2 (CIGS) films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The objective of this key comparison is to compare the equivalency of the National Metrology Institutes (NMIs) and Designated Institutes (DIs) for the measurement of mole fractions of Cu, In, Ga and Se in a thin CIGS film. The measurand of this key comparison is the average mole fractions of Cu, In, Ga and Se of a test CIGS alloy film in the unit of mole fraction (mol/mol). Mole fraction with the metrological unit of mol/mol can be practically converted to atomic fraction with the unit of at%.
In this key comparison, a CIGS film with certified mole fractions was supplied as a reference specimen to determine the relative sensitivity factors (RSFs) of Cu, In, Ga and Se. The mole fractions of the reference specimen were certified by isotope dilution - inductively coupled plasma/mass spectrometry (ID-ICP/MS) and are traceable to the SI. A total number counting (TNC) method was recommended as a method to determine the signal intensities of the constituent elements acquired in the depth profiles by Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Seven NMIs and one DI participated in this key comparison. The mole fractions of the CIGS films were measured by depth profiling based-SIMS, AES and XPS. The mole fractions were also measured by non-destructive X-Ray Fluorescence (XRF) Analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX).
In this key comparison, the average degrees of equivalence uncertainties for Cu, In, Ga and Se are 0.0093 mol/mol, 0.0123 mol/mol, 0.0047 mol/mol and 0.0228 mol/mol, respectively. These values are much smaller than that of Fe in a Fe-Ni alloy film in CCQM K-67 (0.0330 mol/mol). This means that the quantification of multi-element alloy films is possible by depth profiling analysis using the TNC method.