Chemie und Prozesstechnik
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Transparent conductive oxide (TCO) films are a vital part of a large part of modern technology. The production of TCO materials has sparked much development in plasma coating technology. Quality control measurements of these layers are therefore important in many fields of optics and electronics such as high efficiency thin film photovoltaics. In this presentation, we report on optical measurements of ZnSnOx layers generated by DC/RF magnetron plasma co-sputtering. By changing the respective power on two different targets, the overall power, the gas composition and post-treatment, the properties of this type of layers can be varied in a number of parameters. The optical, electrical, and chemical properties of TCO layers are the technically most important properties together with the layer thickness. The dielectric function of layers is accessible by means of spectroscopic ellipsometry, which also yields the very important value for the layer thickness at the same time. It would be a significant step forward in quality control to use this non-destructive method also as a fast test for electrical properties. Therefore, we report on the optical properties connected to the production parameters, and also on our preliminary results connecting the optical dielectric function (in the visible and near infrared) to the electrical conductivity of the layers. We discuss the effect of deposition parameters on the optical properties of the layers and present an approach for correlating optical and electrical properties. Further, we discuss the question of accuracy of optical properties gained from model-fit-based optical methods and the use of different parameterised models for the dielectric function to achieve this.
ZnSnOx coatings were deposited from two 2in magnetron targets made of
ZnO and SnO2 connected to DC pulsed and RF power supplies, respectively.
The pure Ar and reactive gas mixture Ar/O2 were used. DC pulsed power applied on ZnO target was kept constant 50W 50kHz, 20% d.c. and the RF power applied on SnO2 target was set to values from 0W (pure ZnO deposited) up to 150W (up to 8 at.% of Sn in films). The deposited films were investigated by multiple techniques as deposited at RT as well as after annealing at temperatures 200o C and 450o C. The lower annealing temperature is still compatible with many of common polymeric substrates.
The amount of Sn in the films is proportional to applied RF power on SnO2 target. But there is also significant influence of the post Deposition annealing on the film compositions. The ratio Zn/Sn is reduced by the annealing process. Therefore the annealing is promoting the migration of Sn toward the surface and Zn to inside. Moreover the films deposited in oxygen rich reactive gas mixture does not reduces the resistivity with added Sn in contrary to films deposited in Ar where the resistivity was reduced by 5 orders of magnitudes. The plasma parameters were investigated and mean energies of dominant species were in DC pulsed only about 3eV and DC + RF powered plasma up to 15eV. The expected higher energetic particles in the RF influenced plasma deliver an additional energy to the growing film. Therefore, we observed systematic differences between refractive indexes in the films deposited with low RF powered SnO2 magnetron at RT and post-annealed at 200 ° and practically no difference between RT and post-annealed film at higher RF power above 50 W. The XRD results proved the transitions from an amorphous to more crystalline structure by post-annealing of the films.