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Thermographic NDE is based on the interaction of thermal waves with inhomogeneities. These inhomogeneities are related to sample geometry or material composition. Although thermography is suitable for a wide range of inhomogeneities and materials, the fundamental limitation is the diffusive nature of thermal waves and the need to measure their effect radiometrically at the sample surface only. The propagation of the thermal waves from the heat source to the inhomogeneity and to the detection surface results in a degradation in the spatial resolution of the technique. A new concerted ansatz based on a spatially structured heating and a joint sparsity of the signal ensemble allows an improved reconstruction of inhomogeneities. As a first step to establish an improved thermographic NDE method, an experimental setup was built based on structured 1D illumination using a flash lamp behind a mechanical aperture. As a follow-up to this approach, we now use direct structured illumination using a 1D laser array. The individual emitter cells are driven by a random binary pattern and additionally shifted by fractions of the cell period. The repeated measurement of these different configurations with simultaneously constant inhomogeneity allows for a reconstruction that makes use of joint sparsity. With analytical-numerical modelling or numerical FEM simulations, we study the influence of the parameters on the result of non-linear reconstruction. For example, the influence of the illumination pattern as a variable heat flux density and Neumann boundary condition for convolution with the constant Green's function can be studied. These studies can be used to derive optimal conditions for a measurement technique.
Due to the diffusive nature of heat propagation in solids, the detection and resolution of internal defects with active thermography based non-destructive testing is commonly limited to a defect-depth-to-defect-size ratio greater than or equal to one. In the more recent past, we have already demonstrated that this limitation can be overcome by using a spatially modulated illumination source and photothermal super resolution-based reconstruction. Furthermore, by relying on compressed sensing and computational imaging methods we were able to significantly reduce the experimental complexity to make the method viable for investigating larger regions of interest. In this work we share our progress on improving the defect/inhomogeneity characterization using fully 2D spatially structured illumination patterns instead of scanning with a single laser spot. The experimental approach is based on the repeated blind pseudo-random illumination using modern projector technology and a high-power laser. In the subsequent post-processing, several measurements are then combined by taking advantage of the joint sparsity of the defects within the sample applying 2D-photothermal super resolution reconstruction. Here, enhanced nonlinear convex optimization techniques are utilized for solving the underlying ill-determined inverse problem for typical simple defect geometries. As a result, a higher resolution defect/inhomogeneity map can be obtained at a fraction of the measurement time previously needed.
Due to the diffusive nature of heat propagation in solids, the detection and resolution of internal defects with active thermography based non-destructive testing is commonly limited to a defect-depth-to-defect-size ratio greater than or equal to one. In the more recent past, we have already demonstrated that this limitation can be overcome by using a spatially modulated illumination source and photothermal super resolution-based reconstruction. Furthermore, by relying on compressed sensing and computational imaging methods we were able to significantly reduce the experimental complexity to make the method viable for investigating larger regions of interest. In this work we share our progress on improving the defect/inhomogeneity characterization using fully 2D spatially structured illumination patterns instead of scanning with a single laser spot. The experimental approach is based on the repeated blind pseudo-random illumination using modern projector technology and a high-power laser. In the subsequent post-processing, several measurements are then combined by taking advantage of the joint sparsity of the defects within the sample applying 2D-photothermal super resolution reconstruction. Here, enhanced nonlinear convex optimization techniques are utilized for solving the underlying ill-determined inverse problem for typical simple defect geometries. As a result, a higher resolution defect/inhomogeneity map can be obtained at a fraction of the measurement time previously needed.
In the field of optically excited thermography, flash lamps (impulse shaped planar heating) and halogen lamps (modulated planar heating) have become established for the specific regimes of impulse and lock-in thermography. Flying-spot laser thermography is implemented by means of a rasterized focused laser, e. g. for crack detection (continuous wave operation) and photothermal material characterization (high-frequency modulated). The availability of novel technologies, i. e. fast and high-resolution IR cameras, brilliant innovative light sources and high-performance data acquisition and processing technology will enable a paradigm shift from stand-alone photothermal and thermographic techniques to uniform quantitative measurement and testing technology that is faster and more precise. Similar to an LED array, but with irradiance two orders of magnitude higher, a new type of brilliant laser source, i. e. the VCSEL array (vertical-cavity surface-emitting laser), is now available. This novel optical energy source eliminates the strong limitation to the temporal dynamics of established light sources and at the same time is spectrally clearly separated from the detection wavelength. It combines the fast temporal behavior of a diode laser with the high optical irradiance and the wide illumination area of flash lamps. In addition, heating can also be carried out in a structured manner, because individual areas of the VCSEL array can be controlled independently of each other. This new degree of freedom enables the development of completely new thermographic NDT methods.
Due to their high irradiance and wide modulation bandwidth, high-power lasers open up a wide field of application. For example, the classical methods of pulse and lock-in thermography can be realized in high quality. In addition, structured heating is also possible by using arrays of such lasers. This makes it possible to implement new thermographic methods, such as interference-based detection of cracks or super resolution.
A pilot study for the thickness measurement of HfO2 films was performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of this pilot study was to ensure the equivalency in the measurement capability of national metrology institutes for the thickness measurement of HfO2 films. In this pilot study, the thicknesses of six HfO2 films with nominal thickness from 1 nm to 4 nm were measured by X-ray Photoelectron Spectroscopy (XPS), X-ray Reflectometry(XRR), X-ray Fluorescence Analysis (XRF), Transmission Electron Spectroscopy (TEM), Spectroscopic Ellipsometry (SE) and Rutherford Backscattering Spectrometry (RBS). The reference thicknesses were determined by mutual calibration of a zero-offset method (Medium Energy Ion Scattering Spectroscopy (MEIS) of KRISS) and a method traceable to the length unit (the average thicknesses of three XRR data except the thinnest film). These reference thicknesses are traceable to the length unit because they are based on the traceability of XRR. For the thickness measurement by XPS, the effective attenuation length of Hf 4f electrons was determined. In the cases of XRR and TEM, the offset values were determined from a linear fitting between the reference thicknesses and the individual data by XRR and TEM. The amount of substance of HfO2, expressed as thickness of HfO2 films (in both linear and areal density units), was found to be a good subject for a CCQM key comparison.
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The final report has been peer-reviewed and approved for publication by the CCQM.
Crystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX).
Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphous layer-thickness profiles of the irradiated spots using a two-layer thin-film model (Silicon dioxide and amorphous Silicon on a crystalline Silicon substrate). The measurements further allowed for the analysis of the oxide-layer modifications induced by the laser treatment. The results of the SIE-calculations were cross-checked by an in-depth material lamella via HRTEM and STEM-EDX.
Polymers at interfaces play a major role in a broad variety of applications ranging from engineering purposes (for instance polymer based nanocomposites) to high tech implications (for instance light emitting diodes).
Here, thin films with thicknesses down to few nanometers are prepared on different substrates as model systems for polymer composites. The thin films are investigated by a combination of surface analytical and volume sensitive methods. As surface analytical methods atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements (CAM) are employed. As volume sensitive broadband dielectric spectroscopy (BDS), specific heat spectroscopy (SHS), and ellipsometry are used. Especially attention is paid to understand the glass transition behavior of thin films because the glass transition is the key phenomenon determines the application of polymers also in thin films.
To understand the glass transition behavior of thin films, which is controversially discussed in literature, a three layer model is discussed. Firstly, a mobile surface layer is assumed at polymer air interface of the film due to missing of segment/segment interactions. Secondly, in the middle of the film a bulk-like layer should be expected. Thirdly, for polymers having non-repulsive interactions with the substrate an irreversibly adsorbed layer is expected to be formed. Due the adsorption the molecular mobility of the segments in this layer is slowed down. What is measured for the glass transition of thin films is a complicated average of all of these effects. The different layers are hardly to address separately. Therefore, in the presentation especially model systems are selected and investigated to verify the layer model.
For the vast majority of ellipsometric measurements, the application of planar substrates is mandatory and requires a proper sample alignment prior to the measurement. Here, the authors present a generalized approach of how to extract the isotropic ellipsometric sample parameters from an imaging Mueller-matrix measurement even if the sample is significantly misaligned. They validate the method by layer-thickness calculations based on imaging Mueller-matrix measurements of flat crystalline silicon samples that were misaligned on purpose. Furthermore, they also exploit this method’s capabilities to perform spatially resolved layer-thickness measurements of a single-layer indium-tin-oxide coating on a fused-silica microlens without the need of realignment or repositioning of the sample during the measurement.
In this work, two novel donor/acceptor (D/A) complexes, namely, diindenoperylene (DIP)/1,3,4,5,7,8-hexafluoro-tetracyanonaphthoquinodimethane (F6TCNNQ) and alpha-sexithiophene (6T)/F6TCNNQ, are studied. The D/A complexes segregate in form of π−π stacked D/A cocrystals and can be observed by X-ray scattering. The different conformational degrees of freedom of the donor molecules, respectively, seem to affect the thin-film crystalline texture and composition of the D/A mixtures significantly. In equimolar mixtures, for DIP/F6TCNNQ, the crystallites are mostly uniaxially oriented and homogeneous, whereas for 6T/F6TCNNQ, a mostly 3D (isotropic) orientation of the crystallites and coexistence of domains of pristine compounds and D/A complex, respectively, are observed. Using optical absorption spectroscopy, we observe for each of the two mixed systems a set of new, strong transitions located in the near-IR range below the gap of the pristine compounds: such transitions are related to charge-transfer (CT) interactions between donor and acceptor. The optical anisotropy of domains of the D/A complexes with associated new electronic states is studied by ellipsometry. We infer that the
CT-related transition dipole moment is perpendicular to the respective π-conjugated planes in the D/A complex.