6 Materialchemie
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- 2018 (2) (entfernen)
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- Englisch (2)
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- Electron probe microanalysis (EPMA) (2) (entfernen)
Organisationseinheit der BAM
- 6.1 Oberflächen- und Dünnschichtanalyse (2) (entfernen)
For the determination of porosity of Ir oxide thin films, electron probe microanalysis (EPMA) can be used as part of a combined SEM/EDS/STRATAGem analysis. The mass deposition (in μg cm-2) of films was calculated with the analysis software STRATAGem via k-values measured with EDS. The average density of coated films was obtained from the mass deposition and the film thickness as measured by the cross-section SEM. The porosity was calculated by dividing the average film density by the bulk (theoretical) density of the film material.
Film porosities were counterchecked by spectroscopic ellipsometry (SE) using the Bruggeman effective medium approximation (BEMA).
The results obtained by both analytical approaches/methods used, SEM/EDS/STRATAGem and SE were in good agreement.
The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.