6 Materialchemie
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The X-ray intensities of the K-, L- and M-lines of copper, zirconium and tungsten have been measured with an energy-dispersive X-ray spectrometer of known efficiency as function of photon energy. X-ray production efficiencies were determined from the measured intensities for Kα- and L-series of Cu and Zr and for the L- and M-series of W. These data were compared to calculated X-ray production efficiencies based on the widely used matrix correction models of Pouchou and Pichoir (XPP) and Bastin (PROZA96).
Our results indicate that a replacement of the stopping power in the PROZA96 algorithm by expressions of Joy and Jablonski has only a minor influence on the calculated X-ray production efficiencies. In contrast, the modifications of the ionization cross-section show a stronger effect. We replaced the ionization cross-sections for K lines of the PROZA96 algorithm with different models.
The results for L- and M-Lines are different. For the L-lines of Cu the original XPP and PROZA96 models show the best agreement while using the Bote cross-sections result in an overestimation. For the Zr-L and W-L1, -L2, -L3 X-ray production efficiencies, the Bote cross-sections lead to a significant improvement compared to all other models. The original XPP model represents the best agreement for the M5 efficiencies but underestimates the M4 efficiencies.
There is no superior model or modification because the parameter sets in the models need to be aligned to each other. However, using the ionization cross-sections of Bote, which are based on quantum mechanical calculations, show promising results in many cases.
Elemental composition and thickness determination of thin films by electron probe microanalysis
(2023)
Electron probe microanalysis (EPMA) applies to solid samples of homogenous (bulk) chemical composition and can usually not be applied to structures which are inhomogeneous in the micrometer range such as thin film systems down to a few nm. However, in combination with the established thin film software Stratagem, the thickness as well as the elemental composition of thin films on a substrate can be determined. This has been recently successfully demonstrated for Fe-Ni on Si and Si-Ge on Al2O3 thin film systems. For both systems five samples of different elemental composition and a reference were produced and characterised by inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM) as reference values. Last year, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios). In this contribution, we reevaluated the data acquired for the Fe-Ni and Si-Ge systems using the BadgerFilm software package and compared the obtained elemental compositions and thickness values with the results of the Stratagem software and the reference methods. The conclusion is that the BadgerFilm software shows good agreement with the elemental composition and thickness calculated by Stratagem (mostly <2% for both composition and thickness) and with the reference values for two representative thin film systems (<1%–2% for composition and <10%–20% for thickness).
Analysis of Elemental Composition of Fe1-xNix and Si1-xGex Alloy Thin Films by EPMA and μ-XRF
(2019)
The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification.
Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results.
Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode.
Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.zeige mehr