6 Materialchemie
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Newly developed methodical approaches with an emphasis on correlative imaging analysis of morphology and chemistry of nanomaterials will be presented. Correlative imaging by high-resolution SEM with STEM-in-SEM as well as with EDS, and further with AFM, or with the new technique TKD (Transmission Kikuchi Diffraction) will be explained on various examples of nanostructures, both as starting materials and as embedded/functionalized nanoparticles in products. The unique analytical benefits of the Auger electron probe as a veritable nano-tool for the local surface chemistry will be highlighted. Examples of hybrid analysis of the bulk of nanomaterials by X-ray Spectroscopy and the highest surface-sensitive methods XPS and ToF-SIMS as advanced surface characterization methods available in the Competence Centre nano@BAM will be showed. Particularly for the spatially resolved analysis of the chemistry of nanostructures, such in-depth and lateral gradients of chemistry within mesoporous thin layers, or the completeness of the shells of core-shell nanoparticles, the latter methods are inherent.
Other dedicated developments like approaches for the quantitative determination of the porosity of thin mesoporous layers by electron probe microanalysis (EPMA) with SEM or the quantitative determination of the roughness of particle surface by high-resolution imaging with electron microscopy will be also presented.
The test material EDS-TM001 together with an accompanying software package, “EDX spectrometer check”, have been made available in 2009 by BAM to be employed by EDS (energy-dispersive X-ray spectrometer) users to check the performance of an EDS attached to the SEM. Particularly for test laboratories operating under accreditation schemes like ISO/IEC 17025, a periodical control of the critical instrumental parameters in end-user laboratories is required. With EDS-TM001 or EDS-TM002 (second generation) test material, this periodical check is simplified to the acquisition of only one 10 kV spectrum. The software “EDX spectrometer check” is destined to evaluate automatically this spectrum and determine the performance of the EDS in terms of energy resolution and calibration, as well as possible alteration of low-energy Efficiency due to detector contamination. Energy resolution can be compared with the specified values according to the international ISO standard ISO 15632:2012. EDS-TM is a synthetic material consisting of a 6 μm thick layer of C, Al, Mn, Cu and Zr deposited on a steel (in case of EDS-TM001) or silicon (in case of EDS-TM002) substrate. The chemical composition of EDS-TM was chosen such as to give nearly equal intensities of the low energy lines in a 10 kV spectrum, thus, making it very sensitive against spectrometer efficiency changes. Meanwhile, about 150 laboratories use the EDS-TM001 or EDS-TM002 test material for the periodical check of their EDS. A detailed description of the test material and software together with examples of application was published recently. New results and gained experiences will be presented as well. When the FWHM of the X-ray lines in the EDS-TM spectrum are determined, the spectrum background must be subtracted accurately. The applied physical background subtraction procedure is robust and takes into account the transmission of the detector window. While the previous version considers only Moxtek AP windows, the new version includes selection of silicon Nitride window and the case of windowless detector. Moreover, the new version allows importing of spectra in Bruker spx-format and EMSA/MSA files from EDAX TEAM software.
Windowless detectors have been also tested demonstrating long-term stability after repeated heating and cooling cycles. In this case, the appropriate Background subtraction is decisive for accurate detector characterization. Detailed results will be presented.
Our aim is to develop a new method for full field X ray fluorescence imaging at the BAM line @ BESSY II. We will combine an energydispersive array detector for X rays with a coded aperture to get high resolution images . In coded aperture imaging , an object is projected through a mask , producing many overlapping images on the detector . The first part of the project is to perform raytracing simulations to get realistic data and to develop a reconstruction method that allows to get the Information about the investigated object out of the projected image .
X-ray absorption fine structure (XAFS) spectroscopy is a powerful and widely used tool for material characterization. It is non-destructive, element-sensitive and requires no long-range order of the sample, making it suitable for the investigation of amorphous phases. XAFS includes the X-ray absorption near edge structure (XANES) and the extended X-ray absorption fine structure (EXAFS), providing information about the electronical state of the absorbing atom and the spatial order of the neighboring atoms respectively.
Our new approach presented here is derived from the classical dispersive XAFS setup. The aim is to have a scanningless, stable and reproducible setup for applications, in which dynamic processes occur in the second time scale.
A broad polychromatic beam passes through the sample and is dispersed afterwards by a convexly bent Si (111) crystal. All energies are reflected under different angles and thus spatially separated, allowing a position sensitive detector to record a spectrum over the energy range of the incoming beam in a single shot.
Tests of this setup were performed at the BAMline @ BESSY-II (Berlin, Germany) with different metal foils. First in situ measurements comprised the investigation of the early stages of the zinc(II)2-methylimidazolate (ZIF-8) crystallization. This topic of metal-organic-frameworks (MOF) research is of interest for medical applications. Structural changes with a time resolution of 1 s could be followed. The second dimension of the broad beam can be used for a lateral resolution.
The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.
The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies, the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.