5 Werkstofftechnik
Filtern
Dokumenttyp
Schlagworte
- HIP (3)
- Creep (2)
- Dislocation (2)
- Diffusion (1)
- Hot isostatic pressing (HIP) (1)
- Isostatic hot pressing (HIP) (1)
- Kriechen (1)
- Model (1)
- Nickel-base superalloys (1)
- Phase-field (1)
Organisationseinheit der BAM
- 5 Werkstofftechnik (5) (entfernen)
Mit Hilfe des HIP-Verfahrens („Hot Isostatic Pressing“) werden Poren in der einkristallinen Nickel-Basis Superlegierung CMSX-4 kontinuierlich geschrumpft und dadurch die nach der Erstarrung und der Wärmebehandlung vorhandene Porosität stark reduziert. In diesem Beitrag werden experimentelle und numerische Untersuchungen zu den Mechanismen der Porenschrumpfung zusammengefasst. Es zeigt sich, dass das Verformungsverhalten während Kriechversuchen bei der HIP-Temperatur durch Versetzungsgleitung auf oktaedrischen Ebenen dominiert wird.
Dagegen zeigen Messungen der Porositätsabnahme und Simulationen des Porenschließens, dass die Kinetik der Porenschrumpfung durch das Phänomen der Leerstellendiffusion zwischen Poren und Kleinwinkelkorngrenzen („Low Angle Boundary“, LAB) bestimmt wird. Im Gegensatz führt die klassische Kristallviskoplastizität zu einer systematischen Überschätzung dieser Kinetik. Der scheinbare Widerspruch lässt sich auflösen, wenn man bedenkt, dass auf der Skala der Poren Versetzungsquellen nicht gleichmäßig verteilt sind, wie in der konventionellen Kristallplastizität implizit angenommen wird. Stattdessen wird in einem weiterführenden Modell davon ausgegangen, das Kleinwinkelkorngrenzen (LABs) als Versetzungsquellen fungieren, während die Scherspannungen sehr stark in der Nähe der Poren lokalisiert sind, was die Emission von Versetzungen deutlich reduziert.
Single-crystal components made of nickel base superalloys contain pores after casting and homogenization heat treatment. Hot isostatic pressing (HIP), which is carried above the γ' -solvus temperature of the alloy, is industrially applied to reduce porosity. A modeling of HIP based on continuously distributed dislocations is developed in a 2D setting. Glide and climb of straight-edge dislocations, as well as vacancy diffusion, are the deformation mechanisms taken into account.
Thereby, dislocation glide is controlled by dragging a cloud of large atoms, and climb is controlled by vacancy diffusion. Relying on previous investigations of the creep behavior at HIP temperatures, it is assumed that new dislocations are nucleated at low-angle boundaries (LAB) and move through subgrains until they either reach the opposite LABs or react with other dislocations and annihilate.
Vacancies are created at the pore surface and diffuse through the alloy until they are either consumed by climbing dislocations or disappear at the LABs. The field equations are solved by finite elements. It is shown that pore shrinking is mostly controlled by vacancy diffusion as the shear stresses at the LABs are too low to
nucleate a sufficient amount of dislocations.
The formation of pores in CMSX-4 nickel based superalloys is detrimental to the service life of the material. A way to avoid the problem is to treat the superalloys under Hot Isostatic Pressing (HIP), which enables a large volume fraction of pores to be annihilated. This paper aims to understand the contribution of plastic activity related to the gliding of dislocations on the pore annihilation. Simulations based on a phase-field model of dislocation are performed and make it possible to consider the strong anisotropy of the CMSX-4 under HIP conditions in conjunction to the strong elastic heterogeneity introduced by the pore. For pores with a radius of few micrometers, it is shown that edge parts of dislocation lines that present an extra half atomic plane oriented towards the pore are stacked above and under it in the direction which is perpendicular to their slip-planes, causing an increase of the number of dislocation along the four octahedral directions of the FCC single crystal which intersect the pore center. Results are streamlined within the isotropic elastic theory of dislocations. Effects of elastic anisotropy and dislocation reactions are also investigated in order to specify what would be the dislocation configuration around a pore in CMSX-4 under HIP conditions. Notably, the elastic anisotropy is shown to significantly modify the arrangement of dislocations close to the pore equator. Simulations also allow for the characterization of pore/dislocation interactions when dislocations are involved in Low Angle Boundaries as experimentally observed.
The creep behavior of single crystals of the nickel-based superalloy CMSX-4 was investigated at 1288 °C, which is the temperature of the hot isostatic pressing treatment applied to this superalloy in the industry. It was found that at this super-solvus temperature, where no gammaPrime-strengthening occurs, the superalloy is very soft and rapidly deforms under stresses between 4 and 16 MPa. The creep resistance was found to be very anisotropic, e.g., the creep rate of [001] crystals was about 11 times higher than that of a [111] crystal. The specimens of different orientations also showed a very different necking behavior. The reduction of the cross-sectional area psi of [001] crystals reached nearly 100 pct, while for a [111] crystal psi = 62 pct. The EBSD analysis of deformed specimens showed that despite such a large local strain the [001] crystals did not recrystallize, while a less deformed [111] crystal totally recrystallized within the necking zone. The recrystallization degree was found to be correlated with deformation behavior as well as with dwell time at high temperature. From the analysis of the obtained results (creep anisotropy, stress dependence of the creep rate, traces of shear deformation, and TEM observations), it was concluded that the main strain contribution resulted from <01-1>{111} octahedral slip.
An improved diffusion model is proposed for pore annihilation during HIP of single-crystal nickel-base superalloys. The model assumes the pore dissolution by emission of vacancies and their sink to the low angle boundaries. Calculation, considering distribution of the pore sizes, predicts the kinetics of pore annihilation similar to the experimental one.