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The resistance of structural steels against corrosion in CO2-H2O and CO2-H2O-O2
atmospheres at temperatures above 550°C was observed with high magnification methods.
The test atmosphere is the basic composition of an oxyfuel coal combustion atmosphere. The
analytical information base was applied to develop reaction schemes for the oxidation of
steels. It was demonstrated that the formation of phases and the kinetics of oxidation reactions
in this atmospheres is affected by the formation of intermediate iron hydroxide and a high
carbon activity. In the temperature regime above 550°C the thermal equilibrium between H2O,
CO2 and Fe reacted and formed CO. CO triggers the formation of FeO and carbides and
increases the reaction kinetics. Porosity at the interface is established by gaseous phases
such as Fe(OH)2 or H2O. H2 formation is not limited to the steel - oxide interface but can occur
in the whole oxide scale. Examples of the experimental results were compared with a
thermodynamic approach. The objective of the work was to derive qualitative rules of the basic
corrosion reactions.
In the paper the method of discrete modeling (movable cellular automata method) and combined discrete-continuous description of the simulated medium are used to analyze processes occurring in the local contact of the automotive brake system. The characteristic size of the considered region is 1.5 ?m. The following contact situation is simulated: steel fiber coated by an iron oxide film as the brake pad and pearlitic steel also coated by an iron oxide layer as the disc. On the assumption of oxide layer wearing we simulate the iron oxide - iron oxide, iron oxide - metal and metal - metal contacts.
The calculation results for the friction coefficient for various contact situations give quite adequate values. For example, for the oxide - oxide system the calculated coefficient is approximately equal to 0.4, while for the metal - metal contact the obtained value varies from 0.7 to 0.9. Analysis of a set of the obtained results allows concluding that oxide is formed more rapidly than the sliding layer, which in turn makes the friction coefficient value stabilized.
The focused ion beam technique - eine interessante Alternative, auch für konventionelle Werkstoffe
(2002)
XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems
(2002)
The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction.
For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed.
Recent progress in the development of A1GaN/GaN heterostructure field effect transistors (HFETs) Shows the great potential towards high temperature / high power electronics. Nevertheless investigations on reliability properties of GaN-based devices are still at the beginning. The frequently used Ti/A1 based ohmic and Pt based Schottky contacts suffer from strong Degradation after aging at elevated temperatures. Therefore new contact systems have to be employed. Concerning the source and drain metallization we used an amorphous WSiN barrier layer as applied for GaAs on top of the Ti/Al-based ohmic contact. This technique significantly reduces the in-diffusion of the Au-containing overlayer, furthermore the barrier layer guaranties smooth contact morphology after RTA and aging, respectively. For the Schottky metallization the Ir/Au system was used. Reliability studies performed on HFET devices containing refractory Ti/A1/Ti/Au/WSiN ohmic and Ir/Au Schottky contacts demonstrate stable conditions during 120h aging at 500°C.
In the past few years, it has been discussed with increasing frequency, whether cube slip does occur in gamma' hardened nickel-base superalloys. Occurrence of cube slip has consequences for the modeling of orientation dependence of the CRSS. Until now, there are only few experimental investigations.
In principle, cube slip should be possible in primitive cubic lattices (e.g. L12 ordered gamma' phase) but not in face centered cubic ones (e.g. Ni solid solution). The most favourable specimen orientations are near [111], where the Schmid factors for this type of glide exceed those for octahedral systems.
There are two basic methods to detect cube slip: macroscopic slip trace analysis and Transmission electron microscopy (TEM) investigation of the dislocation structure. Few observations of cube slip by macroscopic slip traces are reported in the literature. But it is still uncertain under which test conditions cube slip occurs and what the dislocation mechanisms are. Cube slip was observed during tensile or compression tests of several first generation superalloys, but it seems not to occur during shear creep deformation (e.g. CMSX-4 at 980°C), and it is also lacking under conventional tensile or compression loading, if the gmma' particles are small. No observations were ever reported of dislocations gliding on {001} planes in matrix channels.
The formation of AlN films prepared by N+2 ion implantation into aluminium was investigated using X-ray and Auger photoelectron spectroscopy ( XPS, AES) as well as cross-sectional transmission electron microscopy (XTEM). After 100-keV N+2 implantation of low doses (1×1017 cm−2), the formation of hexagonal AlN nanocrystals (crystal size <5 nm, Ncrystal=1017 cm−3) was observed. Their orientation is strongly correlated with the aluminium matrix. With the dose increasing to 3×1017 cm−2, crystal growth follows, finally forming a homogeneous AlN-layer. Furthermore, the diffraction patterns show an increasing amount of misorientation with increasing dose. From the crystal size distribution, we conclude that continuous nucleation takes place. Samples implanted with an energy of 3 keV exhibit analogous behaviour. Nitride growth was further investigated using microstructured AlN formed by 3-keV implantation through movable TEM-masks (structure size: 15–150 mm).
In the case of high N+2 doses (D&5×1017 cm−2), AlN is detected by AES in the shielded area at a distance of up to 10 mm from the exposed region. The Diffusion coefficient was calculated to be 10−10 cm2 s−1. The formation of AlN proceeds in two steps.
After a continuous nucleation, diffusion-assisted Crystal growth takes place until a homogeneous AlN layer results.