Filtern
Erscheinungsjahr
- 2002 (13) (entfernen)
Dokumenttyp
Sprache
- Deutsch (5)
- Englisch (5)
- Mehrsprachig (3)
Schlagworte
- AlGaN/GaN heterostructure (1)
- Coating, debris (1)
- Intermetallic phases (1)
- Ohmic contact (1)
- Rapid thermal annealing (1)
- Solid lubrication (1)
- TEM (1)
- Third body (1)
- WSiN diffusion barrier (1)
- Wear particle (1)
Eingeladener Vortrag
- nein (4)
XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems
(2002)
The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction.
For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed.