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- nein (6)
Optical and electron metallography have been used to investigate the development of different microstructures in Armco Fe after rolling reductions between 0 and 90%. Simultaneously, the orientation distribution functions have been calculated from pole figures obtained by X-ray diffraction. Different stages of texture development could be assigned to typical microstructures. Strain inhomogeneities, such as microbands and shear bands, caused some broadening of the texture and a slight deviation of one skeleton line from the predicted fibre texture component. The decomposition of orientations near {111} < 121 > , and the strengthening of {211} < 011 > after high rolling reductions, was not due to mechanical twinning but could rather be explained by assuming {211} < 111 > slip. 30 ref.--AA
The role of grain size and ferrite substructure in respect to mechanical properties of an HSLA steel
(1986)
Several heat treatments were applied to an HSLA steel on type StE460 (German standard) to produce four ferrite substructures of different strength and at least two different grain sizes respectively. Whereas the ferrite substructure has a strong influence on yield strength the effect of grain size was negligible though probably to some extent masked by different pearlite volume fractions. The different strength levels could be explained by regarding the arrangement of dislocations and vanadium carbonitride particles and their mutual interaction. Increasing both grain size and pearlite volume fraction leads to a remarkable shift of transition temperature T sub 27J which was further enhanced by increasing ferrite strength. 16 ref.--AA
TEM study on the effect of machining on the microstructure of a soft magnetic Ni76Fe17Cu5CrMo2 alloy
(1991)
Phasenbildung in Metall-Halbleiterkontaktschichten und Präparationstechnik für TEM-Untersuchung
(1995)
Low-cycle fatigue experiments under combined axial-torsional loading have been carried out on alloy 800 H tubular specimens at room temperature. In comparison with proportional loading, an extra cyclic hardening effect produced by nonproportional loading was observed. The microstructure study highlights the fact that the dislocation arrangement under proportional loading is significantly different from that under nonproportional loading. Mechanical twinning was found in specimens cycled under axial loading and nonproportional loading. It is suggested that mechanical twinning depends not only on shear stress but also on normal stress on the plane of maximum shearing. The extra hardening can be interpreted in terms of the deformation microstructure. Fatigue cracking was initiated generally at the specimen surfaces along the plane of maximum shearing, but under nonproportional loading cracks were found also in the bulk of the specimens. Transcrystalline crack propagation was observed in the specimens after proportional and nonproportional LCF tests.
An extended model of the tension-compression asymmetry of single crystal nickel-base superalloys
(1996)
Interrupted LCF-tests at 850 deg C for Inconel 738LC have been carried out and the specimens have been intensively examined by REM to quantify the evolution of fatigue damage. Surface crack nucleation at oxidatized grain boundaries and coalescence of neighboring flaws occurred during the whole experiment. An anomalous fast single crack growth is observed just after nucleation, followed by a relative stagnation of the propagation in absence of coalescence. A statistical model is proposed that describes these pheonmena. It leads to an integro-differential equation for the crack density f(c,n) after n cycles, similar to the Bolzmann equation which describes the collision of molecules in a dilute gas.
Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking place during contact formation of the system Ge(115 nm)/Pd(50 nm)In0.53Ga0.47As. In order to get information about the sequence of the different processes, rapid thermal, annealing experiments in the range 225400 °C were performed. The following features were observed: at 225 °C Pd reacted with the substrate forming the quaternary phase PdxIn0.53Ga0.47As (x 4), and with the Ge-layer forming mainly PdGe and Pd2Ge. Between PdxIn0.53Ga0.47As and In0.53Ga0.47As, a 5 nm thick amorphous Pd-In-Ga-As layer remained, indicating that the first reaction step was solid-state amorphization. After annealing at 350 °C, PdxIn0.53Ga0.47As disappeared and regrowth of In0.53Ga0.47As occured. Finally, at 400 °C, residual Ge from the amorphous top layer diffused to the interface and grew epitaxially on the regrown In0.53Ga0.47As, thus separating the IIIV compound semiconductor from the Pd-Ge reaction products. The interface remained flat, while only about 10 nm of the active In0.53Ga0.47As layer had been modified during the annealing processes.