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- 2002 (13) (entfernen)
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- Deutsch (5)
- Englisch (5)
- Mehrsprachig (3)
Schlagworte
- AlGaN/GaN heterostructure (1)
- Coating, debris (1)
- Intermetallic phases (1)
- Ohmic contact (1)
- Rapid thermal annealing (1)
- Solid lubrication (1)
- TEM (1)
- Third body (1)
- WSiN diffusion barrier (1)
- Wear particle (1)
Eingeladener Vortrag
- nein (4)
Untersuchung der Mikrostruktur asbesthaltiger Bremsbeläge und Möglichkeiten der Asbestsubstitution
(2002)
XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems
(2002)
The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction.
For two typical rapid thermal annealing steps at 750 ◦C (non-ohmic behaviour) and 850 ◦C (ohmic behaviour) the intermetallic phases at the metal–semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed.
The focused ion beam technique - eine interessante Alternative, auch für konventionelle Werkstoffe
(2002)
An attempt was undertaken to obtain a better understanding of the tribological properties of two wear-resistant coatings on tool steel by structural and microchemical analysis of wear particles using a transmission electron microscope. Coatings were deposited by physical vapor deposition and plasma-assisted chemical vapor deposition techniques and tribological properties were derived from reciprocating sliding tests of the coatings against alumina balls. Three types of wear particles were identified by electron diffraction and energy dispersive X-ray spectroscopy: nanocrystalline rutile (TiO2), nanocrystalline graphite and microcrystalline graphite. Low coefficients of friction, of the order of 0.2, were attributed to the formation of solid lubricant films of sub-stoichiometric TiO2-x Magnéli phases and/or graphite.
XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems
(2002)
The microstructural features of the high-temperature-stable ohmic contact system Ti/Al/Ti/Au/WSiN on AlGaN/GaN were investigated using analytical transmission electron microscopy and thin film x-ray diffraction. For two typical rapid thermal annealing steps at 750 °C (non-ohmic behaviour) and 850 °C (ohmic behaviour) the intermetallic phases at the metal-semiconductor interface are presented. Increased annealing leads to the transformation of an Al2Au-AlAuTi phase mixture to a mixture of Al2Au-Al3Au8 phases and the formation of Ti-Al-nitride layers at the interfaces. In light of these results the electrical contact properties are discussed.