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Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a top-down, silicon-on-insulator technology. The technology provides a pathway for obtaining well-controlled silicon nanowires along with microstructures up to a three-order-of-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 m. All cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire.
Automotive brake pads consist of many components but it is still not entirely clear which role each of the elements of this complex composition plays to provide the specified regimes of sliding. This is due to the mutual interaction of multiscale mechanisms, realized during the friction.
In this work we have attempted to partly answer this question using computer simulations. Since the simulation allows us to consider various combinations of the structure of the system being simulated ceteris paribus, it becomes possible to understand the role of each constituent sequentially. The main attention is paid to the structure and composition of the thin film that forms on the surface of both bodies as a result of compaction of the wear product, its chemical composition and oxidation. This layer, also named a third body or friction film, differs in composition and microstructure from the two first bodies. We considered a single contact for the steady state sliding when the structure and composition of friction films already are formed. As a modelling tool we used the method of movable cellular automata, which has well proven itself in solving of such tasks. We investigated the influence of modification of the structure and composition of the third body on the features of system behaviour at friction. To assess the adequacy of the numerical model, experimental studies with an artificial third body were also carried out. The Simulation results are in good agreement with experimental data.
A cross-section sample of the friction film formed on top of a disc during a brake testing procedure against Polymer Matrix Composite pads was made using a Focused Ion Beam (FIB). The FIB-cut sampled the "third body" magnetite layer and the upper part of the cast iron disc containing a graphite flake. Images of the sample examined in a Energy Filtered Transmission Electron Microscope captured an instant view of the important role of the graphite flakes in magnetite formation, where few layer graphene batches interacted with the iron border promoting cracking and oxidation along the graphite–iron interface. The resulting nano-scale interlayer of magnetite and strongly disordered graphite formed a third body which yielded adequate brake performance.
A gray cast iron disc, which had been submitted to a heavy duty automotive brake test, was examined with energy filtered transmission electron microscopy. A graphite flake in a convenient angular position showed the shear interaction of graphite layers with the iron matrix in nano-scale resolution. Atomic layers of graphite were wedged into the ferritic bulk, allowing the entrance of oxygen and the subsequent formation of magnetite. The exfoliated few-layer graphene batches deformed heavily when forced into the matrix. When Raman spectra from the disc surface, which show distinctive carbonaceous bands, were compared with Raman spectra from graphite subjected to deformation in a shaker mill with different milling times, it could be seen that the shear stress on the brake surface was much more effective to induce disorder than the milling, where compressive and impact forces had been additionally exerted on the sample. During shear load the high anisotropy of elastic modulus in the graphite crystalline structure and the low adhesion between graphite basal planes allowed the exfoliation of wrinkled few-layer grapheme batches, causing the formation of more defect related Raman bands than the mechanical stress during high-energy milling.
Die volle Leistung einer auf Reibung basierenden Bremse wird erst nach einem Einlaufvorgang erreicht. Dieser ist notwendig, um auf Belag und Scheibe eine sogenannte Reibschicht aufzubauen. Da diese Zwischenschicht das Reibungsverhalten des Systems maßgeblich bestimmt, ist es wichtig, sich Klarheit über ihre chemische Zusammensetzung, Mikrostruktur und die daraus resultierenden Eigenschaften zu verschaffen.
Als Basismaterial diente ein phenolharzgebundener Belag Jurid 57-62, der mit verschiedenen Parametern (Flächenpressung und Umdrehungsgeschwindigkeit) gegen eine Stahlscheibe getestet wurde. Es wurden Dauerbremsungen von jeweils einer Stunde bzw. bis zu einem maximalen Belagverschleiß von 1 mm simuliert, wobei die Entwicklung der Reibzahl und die Oberflächentemperatur der Scheibe registriert wurde.
Zur Analyse der Reibschichten auf dem Bremsbelag wurden mehrere Methoden parallel angewandt. So wurden Verschleißpartikel, die aus der Reibschicht stammen, gesammelt bzw. abgekratzt und nach Dispergieren auf Kohlefolien direkt im Transmissionselektronenmikros-kop (TEM) untersucht. Ferner wurden von einigen ausgesuchten Belagproben Mikrotom-schnitte sowie dünne Querschnittsfolien für die TEM-Untersuchung präpariert, um den Verbund Reibschicht-Grundmaterial darstellen zu können. Als Ergänzung wurden ferner oberflächenmorphologische und –analytische Verfahren wie REM/EDX und ESCA eingesetzt.
Die Ergebnisse deuten darauf hin, dass die Reibschicht nanokristallin ist, und dass fast alle anorganischen Bestandteile des Bremsbelags sowie Eisenoxid von der Bremsscheibe in sehr fein verteilter Form vorliegen. Bei Belägen ohne Metallanteil bildet eine Barium-Eisen-Sulfatphase offenbar die Grundstruktur der Reibschicht, während auf eisenhaltigen Belägen Eisenoxid dominierend ist. Die nanokristalline Mikrostruktur entsteht, ähnlich wie beim mechanischen Legieren, durch einen Mahlvorgang von Verschleißpartikeln zwischen den Reibpartnern. Bei Überlastung des Belags tritt Zersetzung der Polymer-Bindephase ein, was zu einem raschen Anstieg der Verschleißrate führt.
Multi-layer ohmic contact systems such as Au/Pt/Ti/Pt on III-V double layers such as n-InGaP/p+-GaAs are of considerable technological relevance, e.g. for heterojunction bipolar transistors. The paper shows that such contacts can be effectively reacted through the InGaP layer and exhibit very good contact resistances (0.1 O mm) to the base layer if the thickness of the first Pt layer is properly matched to the thickness of the contacted InGaP layer. Interdiffusion and phase formation associated with the annealing processes are studied by cross-sectional analytical transmission electron microscopy, thin-film x-ray diffraction and Auger electron spectroscopy depth profiling. Thermal ageing experiments up to 400 °C show good electrical stability. Device related reliability tests do not show any degradation effect related to this novel base contact.
A new type of test sample for the determination of lateral resolution in surface analysis is presented. The certified reference material BAM-L002 Nanoscale strip pattern for length calibration and testing of lateral resolution is an embedded cross-section of epitaxially grown layers of AlxGa1-xAs and InxGa1-xAs on GaAs substrate. The surface of the sample provides a flat pattern with strip widths of 0.4-500 nm. The combination of gratings, isolated narrow strips and sharp edges of wide strips offers improved possibilities for the calibration of a length scale, the determination of lateral resolution and the optimization of instrument settings. The feasibility of the reference material for an analysis of lateral resolution is demonstrated for SIMS.