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TEM study on the effect of machining on the microstructure of a soft magnetic Ni76Fe17Cu5CrMo2 alloy
(1991)
The role of grain size and ferrite substructure in respect to mechanical properties of an HSLA steel
(1986)
Several heat treatments were applied to an HSLA steel on type StE460 (German standard) to produce four ferrite substructures of different strength and at least two different grain sizes respectively. Whereas the ferrite substructure has a strong influence on yield strength the effect of grain size was negligible though probably to some extent masked by different pearlite volume fractions. The different strength levels could be explained by regarding the arrangement of dislocations and vanadium carbonitride particles and their mutual interaction. Increasing both grain size and pearlite volume fraction leads to a remarkable shift of transition temperature T sub 27J which was further enhanced by increasing ferrite strength. 16 ref.--AA
Cross-sectional transmission electron microscopy, in combination with energy dispersive X-ray spectroscopy and focused beam microdiffraction, was applied to study the solid-state reactions taking place during contact formation of the system Ge(115 nm)/Pd(50 nm)In0.53Ga0.47As. In order to get information about the sequence of the different processes, rapid thermal, annealing experiments in the range 225400 °C were performed. The following features were observed: at 225 °C Pd reacted with the substrate forming the quaternary phase PdxIn0.53Ga0.47As (x 4), and with the Ge-layer forming mainly PdGe and Pd2Ge. Between PdxIn0.53Ga0.47As and In0.53Ga0.47As, a 5 nm thick amorphous Pd-In-Ga-As layer remained, indicating that the first reaction step was solid-state amorphization. After annealing at 350 °C, PdxIn0.53Ga0.47As disappeared and regrowth of In0.53Ga0.47As occured. Finally, at 400 °C, residual Ge from the amorphous top layer diffused to the interface and grew epitaxially on the regrown In0.53Ga0.47As, thus separating the IIIV compound semiconductor from the Pd-Ge reaction products. The interface remained flat, while only about 10 nm of the active In0.53Ga0.47As layer had been modified during the annealing processes.