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Es wird die Untersuchung des Entlüftungsvorgangs in Keramikschlickern beschrieben, die Teil des Gelcastingprozesses zur Herstellung hochfester Aluminiumoxidkeramiken sind. Ziel der Untersuchung war es, den Einfluss von Viskosität und Entlüftungszeit als prozessvariablen auf die Entstehung von bruchauslösenden Fehlern im Gefüge zu verdeutlichen.
Die für einen erfolgreichen Einsatz von Festschmierstoffen zur Minderung von Reibung und Verschleiß systembestimmender Parameter wie Last, Geschwindigkeit, Temperatur, umgebende Atmosphäre, Filmbildung und -haltung sowie die Anwendungstechnologien werden dargestellt, ferner Modellvorstellungen zum Verschleißverhalten von Festschmierstoffen im Hinblick auf konkrete Anwendungsfälle diskutiert.
Ceramics are of increasing interest for application in many branches of technique. In order to improve the tribological performance of ceramic materials, composites on the basis of silicon carbide with different amounts of titanium carbide, boron carbide, titanium diboride and free carbon in the form of graphite were manufactured by a reaction sintering process.
The friction and wear behaviour of these composites was investigated with oscillating sliding motion in unlubricated tests at room temperature on different levels of relative humidity. Additional tests were performed under water lubrication, revealing the superior behaviour of composites for special test conditions. A major influence of the free carbon on friction or wear behaviour was not observed. The tribological behaviour in air as well as under water is mainly dependant on the amount of titanium phases.
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the direct semiconductor SiC and the composite compound SiC-TiC-TiB2 was investigated in respect to resulting physicochemical processes. Surface analytical techniques, such as XPS, µ-Raman, and EDX were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material
modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. In the nanosecond case, melting of the surface and redeposited material (debris) were observed. With femtosecond pulses instead, only negligible melting and few debris could be detected. Additionally, periodic structures (ripples) appeared, with parallel orientation and in most cases two different periodicities for a particular material. Laser ablation of all the studied compound materials exhibited preferential ablation of the lighter component elements. Crystal structure changes of the irradiated surface were observed as a consequence of laser-induced melting and resolidification. An oxidation process interfered with all this processes so that unstoichiometric oxides were formed.
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the semiconductor SiC and the composite compound SiCTiCTiB2 was investigated. Surface analytical techniques, such as XPS, depth profile (DP), and micro-Raman spectroscopy (?-RS) were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. Crystal structure changes were observed as a consequence of laser-induced melting and resolidification. In air contact all components underwent oxidation reactions according to thermodynamic expectations. Exceptions were observed under exclusion of oxygen, SiC was reduced to elemental Si.