MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of a BMg bilayer followed by in situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 °C to be reached. Transmission electron microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC~106 A cm-2 at 11 K.