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- Alternaria mycotoxins (1)
- Electron microscopy (1)
- Instrumentation (1)
- Inter-fungal competition (1)
- Intermetallic phases (1)
- Multi-mycotoxin analysis (1)
- Nanoscale dynamics (1)
- Neutron scattering (1)
- Neutron spectroscopy (1)
- Phytopathogen (1)
The neutron time-of-flight spectrometer NEAT has a long history of successful applications and is best suited to probe dynamic phenomena directly in the large time domain 10(-14) - 10(-10) s and on the length scale ranging from 0.05 to up to about 5 nm. To address user community needs for more powerful instrumental capabilities, a concept of the full upgrade of NEAT has been proposed. The upgrade started in 2010 after a rigorous internal and external selection process and resulted in 300-fold neutron count rate increase compared to NEAT01995. Combined with new instrumental and sample environmental capabilities the upgrade allows NEAT to maintain itself at the best world class level and provide an outstanding experimental tool for a broad range of scientific applications. The advanced features of the new instrument include an integrated guide-chopper system that delivers neutrons with flexible beam properties: either highly homogeneous beam with low divergence suitable for single crystals studies or "hot-spot" neutron distribution serving best small samples. Substantial increase of the detector angle coverage is achieved by using 416 He-3 position sensitive detectors. Placed at 3m from the sample, the detectors cover 20m(2) area and are equipped with modern electronics and DAQ using event recording techniques. The installation of hardware has been completed in June 2016 and on January 23, 2017 NEAT has welcomed its first regular users who took advantage of the high counting rate, broad available range of incoming neutron wavelengths and high flexibility of NEAT. Here we present details of NEAT upgrade, measured instrument characteristics and show first experimental results.
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on IN0.53Ga0.47As
(1996)
The role of mycotoxins in the microbial competition in an ecosystem or on the same host plant is still unclear. Therefore, a laboratory study was conducted to evaluate the influence of mycotoxins on growth and mycotoxin production of Fusarium and Alternaria fungi. Fusarium culmorum Fc13, Fusarium graminearum Fg23 and two Alternaria tenuissima isolates (At18 and At220) were incubated on wheat kernels supplemented with alternariol (AOH), tetramic acid derivates (TeA), deoxynivalenol (DON) and zearalenone (ZEA) in an in vitro test system. Fungal biomass was quantified by determining ergosterol content. Three Fusarium toxins (DON, nivalenol and ZEA) and three Alternaria toxins (AOH, alternariol methyl ether (AME) and altenuene) were analysed by HPLC-MS/MS. If Alternaria strains grew in wheat kernels spiked with Fusarium mycotoxins, their growth rates were moderately increased, their AOH and AME production was enhanced and they were simultaneously capable of degrading the Fusarium mycotoxins DON and ZEA. In contrast, both Fusarium strains behaved quite differently. The growth rate of Fc13 was not distinctly influenced, while Fg23 increased its growth in wheat kernels spiked with AOH. TeA depressed the ergosterol content in Fc13 as well as in Fg23. The DON production of Fc13 was slightly depressed, whereas the ZEA production was significantly increased. In contrast, Fg23 restricted its ZEA production. Both Fusarium strains were not capable of degrading the Alternaria mycotoxin AOH. Mycotoxins might play an important role in the interfungal competitive processes. They influence growth rates and mycotoxin production of the antagonistic combatants. The observed effects between phytopathogenic Alternaria and Fusarium strains and their mycotoxins aid the understanding of the complexity of microbial competitive behaviour in natural environments.
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
(1996)
Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures .250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures .350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor.