Open Access

Transformers couple two sections of a circuit by electromagnetic induction. They are widely used to either transform alternating voltage levels or to transmit power or signals across galvanic isolation. Both of these functions are essential for the operation of sensors and controllers. Covering all aspects from idea to circuit performance and from design to manufacture, this paper presents the first comprehensive description of the making of miniaturized, rugged, up-to-100W transformers for embedding into multilayer circuit boards. For circular coils, the well-manageable Ampere-Laplace law is shown to yield reliable designs, predicting correctly the performance of manufactured hardware. This enables fast design without lengthy finite element modelling. In the low-power linear regime, basic relations describe how the device’s characteristics evolve from the material properties and device structure. While scattering Parameters are useful for the analysis of isolated transformers with their intrinsic parasitics, the interaction with the components of the final circuit and the aspects of power and efficiency are addressed by chain matrixes. While these design rules are similar for multilayer boards of different material (like epoxy, Teflon, ceramics), the manufacturing of ceramic board transformers is considered here in detail. Low-temperature-cofired ceramic (LTCC) boards being sintered at 900 °C are particularly suited for harsh environments with chemical or thermal stress as frequently found at sensor positions. The transformer performance usually benefits from or even requires an integrated ceramic core of higher permeability, a ferrite, to shape the magnetic flux. Methods to sinter ferrites inside a dielectric ceramic multilayerandto measure their performance are therefore described in detail.Asthe sintering behaviour of dielectricandmagnetic ceramics differs considerably, their simultaneous sintering is challenging.However, the sintering temperatures of the usefulMnZnand NiZnCu ferrites can be lowered to that of the dielectric material with only moderate loss of permeability by glass additives. Furthermore, thermal mismatch between materials causes catastrophic failure or at least stress and loss of magnetic performance during cooling to room temperature after sintering. This is avoidable by either adjusting the thermal expansion coefficient of the ferrite or by enclosing the ferrite between stressreleasing separation layers.We present the state of the art in materials development according to the first approach as well as fully functional devices made with the second technique. Other applications not directly addressed but well related to this work are characterized by low load resistance in relation to the coil resistance of the transformer. Efficient power transmission then requires that technological solutions are applied to achieve the lowest possible resistive loss inside the coils by an enlarged conductor cross-section. As this is particularly challenging for LTCC boards, a technique is discussed to fabricate conductor traces with a thickness larger than their width.

In this work, the effect of the pressure-assisted sintering process on buried thick film resistors integrated in LTCC multilayer has been studied. Four commercial resistor pastes with sheet resistivities between 10 kΩ and 10 MΩ/cm were analyzed. First they were characterized by SEM/EDX, XRD and Laser diffraction to determine composition and particle distribution. The pastes consist of isolating particles and of Ruthenium based particles that are supposed to build the conductive phase. The pastes were screen printed on LTCC green tape (DP 951) and buried in four layer laminates. Sintering was done in two ways, pressureless (PLS) and also pressure-assisted (PAS). The pressureless sintered resistors showed electrical resistance values roughly in the range of the nominal sheet resistivity and only relatively small fluctuation within one sample. The PAS samples on the other hand showed significantly higher resistances and larger deviations. The microstructure of the sintered resistors was again investigated by SEM and XRD. It seems that the resistivity is determined by the ratio of the two Ruthenium phases RuO2 and Pb2Ru2O6.5, where RuO2 has the higher conductivity. Buried resistors cannot be trimmed by a laser to adjust the resistance. But we discovered that a refiring step will reduce and normalize the resistivity of the PAS resistors significantly.

Low-κ dielectric LTCC was developed, to realize successful co-firing with NiCuZn ferrite tapes. A critical high-temperature process in the production of highly integrated LTCC modules is the migration of silver from inner conductors into the LTCC glass phase. Intensive silver migration causes strong deformation of LTCC multilayers during firing in air. Silver migration into the LTCC glass phase depends on oxygen content of the sintering atmosphere and can be minimized by sintering in nitrogen atmosphere. However, partial decomposition of NiCuZn-ferrite and formation of cuprite was observed during sintering in nitrogen and, consequently, the permeability of the ferrite decreases. As shown by a combined XRD/thermogravimetric study the co-firing of LTCC modules with silver metallization and integrated ferrite layer demands precise adjustment of oxygen partial pressure.

Tunable microwave devices will play an important role in future wireless systems, in which high-frequency bands, e.g. millimeter waves, will become promising, due to its huge spectrum availability. At such frequency bands, liquid crystals (LCs) exhibit low microwave loss, which is excellent compared with the other tuning elements. In this paper, LC-based microwave components are fabricated by using low temperature co-fired ceramic technology, allowing the integration of the LC into microwave structures. The first component, the Amplitude tuner, controls the signal’s amplitude by using the interference concept, which exhibits a tunable attenuation range from 11 dB to 30 dB at 30 GHz. The second component is a 3-pole tunable bandpass filter, which is realized by using a substrate integrated waveguide topology, enabling a device with comparatively high-quality factors (Q-factors). The measurement results show Q-factors in the range of 68 to 100 for a frequency tuning of 29.4–30.1 GHz, i.e. a tuning range of 700 MHz, accompanied by an insertion loss 2 dB to 4 dB.