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Das Basisanliegen - Einleitung
Mit der zunehmenden Zahl akkreditierter ZfP-Firmen und zunehmender Anwendung risikobasierender Konzepte ergibt sich die Notwendigkeit, internationale Standards wie die DIN EN ISO 17025 und darüber hinausgehende Richtlinien bei der Verfahrensauswahl in der ZfP zu berücksichtigen. Dieser Aufsatz soll aufzeigen, welche internationalen Aktivitäten gegenwärtig für die Zuverlässigkeitsbetrachtungen von Bedeutung sind (siehe auch [1]). In Übereinstimmung mit den Vereinbarungen und Definitionen der European-American Workshops zur Zuverlässigkeit [2, 3] gilt: Das Basisanliegen der Zuverlässigkeitsuntersuchungen beliebiger diagnostischer Systeme besteht darin, den Grad festzustellen mit dem das Prüfsystem in der Lage ist, seinen vorgesehenen Zweck zu erfüllen. Im Falle der ZfP besteht dieser Zweck zumeist in der Aufgabe, Bauteildefekte aufzufinden und zu beschreiben bzw. die Defektfreiheit von Bauteilen zu bestätigen, sowie Wanddicken zu messen oder Material zu charakterisieren.
Das Basisanliegen der Zuverlässigkeitsuntersuchungen findet seinen Niederschlag bei folgenden international relevanten Aktivitäten:
neue ISO 17025 als Notwendigkeit mit variablen Möglichkeiten der Verfahrensvalidierung
als Kettenglied in RBLM (Risk Based Life Time Management) (r) EPERC-Initiative
CEN/TC138/WG9 "Qualifizierung von ZfP-Verfahren"
Six-Sigma Strategie: als notwendiger Bestandteil
ASNT-Initiative: Standing Committee on NDE Reliability: als Arbeitspaket
Produkthaftung: als notwendige Voraussetzung für die Handhabung
During the second European-American Workshop on NDE Reliability, September 99 in Boulder, the term NDE reliability was defined as the degree that an NDT system is capable of achieving its purpose regarding detection, characterization and false calls. The most common but also most expensive - way to determine this degree of capability in e.g. defect detection is to make just a performance demonstration using realistic test samples and to count the correct detections and false calls. For a more efficient way of reliability evaluation we propose to decompose the system into main modules e.g. according to the reliability formula set up on the first workshop: into f(IC) a function of IC the intrinsic capability, determined by the physics and the technique of the NDE method representing an ideal upper bound of the reliability and g(AP) a function of AP the industrial application factor like surface state or limited access to a component in general diminishing the ideal capability and finally h(HF) the function of the human factor which is in general also diminishing the ideal capability. The workshop proposed a rather plain mathematical shape for the formula R = f(IC) g(AP) h(HF) which should be considered merely as a philosophical expression but not as exact mathematical formula to be applied for evaluation of e.g. POD data. We propose to decompose the NDE system into modules in terms of functions of IC, AP and HF if appropriate or additional ones if necessary and then to analyze the mutual relationships of the terms via fault tree analysis. Finally the total reliability of the system is composed of the reliability of the subsystems via the rules of statistical systems theory.
First trials for this approach of data analysis will be presented via examples from NDE systems in the aerospace industry.
Struktur des basischen Zink-O,O'-ethylhexyldithiophosphats in unpolar, aprotischen Lösungsmitteln
(1995)
We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM
blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of
15 mA/cm², 10% larger than in corresponding standard devices. Modeling of the optical field distribution
in the different device stacks proved that this enhancement originates from an increased absorption of
incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct
comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs
of ~70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting
efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the
photovoltaic properties with layer thickness was measured for both device architectures, attributed to
incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices
based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than
7% provided that recombination losses can be reduced.