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In the search for highly efficient, low-cost, non-toxic, transparent conductive oxides (TCOs) suitable for large area applications for photovoltaics, ZnO and ZnO-related materials have received considerable attention. In the present work, Al and Ga doped ZnO films on oxidized Si substrates are characterized using mainly variable angle spectroscopic ellipsometry; additional optical and non-optical techniques were employed to confirm and support the ellipsometric models considered. The samples were obtained by means of pulsed chemical vacuum deposition (CVD) and atomic layer deposition (ALD).
As known from previous studies the presence of dopants in ZnO thin films generally induce significant changes in the optical, electrical and morphological properties. We present our findings for a series of Al and Ga doped ZnO layers with different concentrations of the dopants, discussing their influence on the optical and electrical properties.