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Promoting the infrastructure - prestandardisation endeavours for ceramic powders and green bodies
(2002)
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the direct semiconductor SiC and the composite compound SiC-TiC-TiB2 was investigated in respect to resulting physicochemical processes. Surface analytical techniques, such as XPS, µ-Raman, and EDX were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material
modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. In the nanosecond case, melting of the surface and redeposited material (debris) were observed. With femtosecond pulses instead, only negligible melting and few debris could be detected. Additionally, periodic structures (ripples) appeared, with parallel orientation and in most cases two different periodicities for a particular material. Laser ablation of all the studied compound materials exhibited preferential ablation of the lighter component elements. Crystal structure changes of the irradiated surface were observed as a consequence of laser-induced melting and resolidification. An oxidation process interfered with all this processes so that unstoichiometric oxides were formed.
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the semiconductor SiC and the composite compound SiCTiCTiB2 was investigated. Surface analytical techniques, such as XPS, depth profile (DP), and micro-Raman spectroscopy (?-RS) were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. Crystal structure changes were observed as a consequence of laser-induced melting and resolidification. In air contact all components underwent oxidation reactions according to thermodynamic expectations. Exceptions were observed under exclusion of oxygen, SiC was reduced to elemental Si.