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- 2014 (4) (entfernen)
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- EDX (3)
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- Geometrical collection efficiency (2)
- Solid angle (2)
- Auger Electron Spectroscopy (AES) (1)
- CCQM (1)
- CIGS (1)
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- Interlaboratory comparison (1)
To compare the performance of different energy dispersive X-ray spectrometers (EDS), it is important to define characteristic spectrometer parameters. The ISO 15632 standard defines parameters like energy resolution as FWHM for the Kα lines of carbon, fluorine and manganese. The quantum efficiency, which is the ratio of the detected photons divided by the number of incoming photons for different energies, is another significant spectrometer property. It is important for the light element and low energy line detection sensitivity as well as for higher photon energies above 10 keV. A striking EDS feature, provided and marketed by many manufactures, is the active area of the detector, although actually, the solid angle available for photon collection is the more relevant geometrical parameter. It is defined as: Ω = A /r2 with A being the active area of a spherical detector and r being the distance between the point of the radiation origin and the center of the surface of the active detector chip. A more accurate calculation should be used for large flat detector areas. One should note that the solid angle Ω is not an intrinsic spectrometer property. It can only be defined for a specific detector in combination with a specific system (e.g. SEM, EPMA or TEM). Thus, the minimal possible distance r is determined by the particular geometry e.g. a possible interference with the pole piece or other detectors/components in the chamber of a microscope. New EDS technologies use e.g. integrated SDD chips or inclined chips in thinner detector fingers which can be placed closer to the sample with the final result of larger real solid angles. Therefore, the knowledge of the real solid angle is one of the crucial parameters of an EDS microscope combination. A straightforward way to estimate the real solid angle is to simply determine A and r. If respective data are not provided by the manufacturer, this approach can be difficult.
A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method.