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- Ablation (5)
- Femtosecond pulse laser (3)
- Micromachining (3)
- Femtosecond-Pulse Laser (2)
- Laser processing (2)
- Semiconductors (2)
- Silicon (2)
- Acoustical measurement (1)
- Aluminium oxide (1)
- Auger electron spectroscopy (1)
Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.
Abstract Femtosecond laser micromachining has excited vivid attention in various industri-
al fields and in medicine owing to the advantages of ultrashort laser pulses compared to
long-pulse treatment.These are mainly the reduction of the laser fluence needed to induce
ablation and the improvement of the contour sharpness of the laser-generated structures.
Recently,special attention was paid to femtosecond laser experiments on nonabsorbing in-
organic dielectrics.This is due to the fact that optical damage in dielectric optical elements
limits the performance of high-power laser systems.Despite the fact that a large variety of
organic polymers can be machined with excimer lasers successfully,the involvement of
thermal processes can lead to an unsatisfactory quality of the structures.Ultrashort,fs-laser
pulses might be an alternative for the treatment of polymers.Therefore,femtosecond laser
machining investigations of dielectrics and polymers are reviewed in this paper.Similarities
and differences of the ablation behavior of both material classes are discussed.The influ-
ence of the bandgap on the ablation threshold in dependence on the pulse duration,the en-
hancement of the machining precision with a shortening of the pulse duration,incubation
phenomena,and morphological features appearing on the surface after femtosecond laser
treatment are mentioned.Possible applications,e.g.,in medicine and biosensors,are de-
scribed.
Damage experiments of absorbing filters (Schott BG18 and BG36) were performed with Ti:sapphire laser pulses with durations from 30 fs to 340 fs (800 nm, 1 kHz) in air. The direct focusing technique was employed under single- and multi-pulse irradiation conditions. Ablation threshold fluences were determined from a semi-logarithmic plot of the ablation crater diameter vs. laser fluence. The damage threshold fluence decreases for shorter pulse durations. In the investigated pulse duration range, the measured multi-pulse ablation threshold fluences are practically similar to those of undoped glass material (~1 Jcm-2). That means that the multi-pulse ablation threshold is independent on the doping level of the filters. For more than 100 pulses per spot and all pulse durations applied, the threshold fluence saturates. This leads to technically relevant damage threshold values in the femtosecond laser pulse duration domain.
Femtosecond pulse laser ablation of metallic, semiconducting, ceramic, and biological materials
(1994)
Production of holes and grooves of < 30 micrometers diameter with high aspect ratio value is a delicate task either for mechanical tools, or for conventional nanosecond pulse lasers like e.g. pulsed Nd:YAG or excimer lasers. They later tend to cause microcracks extending from an annular melting zone, or substantial disruption, respectively. Experimental results are presented which demonstrate that the development of intense ultrashort pulse laser systems (>> 1012 W cm-2, (tau) < 1 ps) opens up possibilities for materials processing by cold plasma generation and ablation of metals, semiconductors, ceramics, composites, and biological materials. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs (< 200 (mu) J) and 7 ns (< 10 mJ), and center wavelengths at 612 and 600 nm, respectively, both focused on an area of the order of 10-5 cm2, have been applied either to absorbing substrates, like polycrystalline gold, silicon (111), aluminum nitride ceramics, or transparent materials, like synthetic and human dental hydroxyapatite composites, bone material, and human cornea transplants. The fs-laser generates its own absorption in transparent materials by a multiphoton absorption process, and thus forces the absorption of visible radiation. Because the time is too short (< ps) for significant transport of mass and energy, the beam interaction generally results in the formation of a thin plasma layer of approximately solid state density. Only after the end of the subpicosecond laser pulse, it expands rapidly away from the surface without any light absorption and further plasma heating. Therefore, energy transfer (heat and impulse) to the target material, and thermal and mechanical disruption are minimized. In contrast to heat- affected zones (HAZ's) generated by conventional nanosecond pulse lasers of the order of 1 - 10 micrometers , HAZ's of less than 0.02 micrometers were observed.
Structuring of dielectric and metallic materials with ultrashort laser pulses between 20 fs and 3 ps
(1997)
Laser-micromachining of barium aluminum borosilicate glass, fused silica and stainless steel has been extended down to a pulse duration of 20 fs generated by a Ti:sapphire laser system at a wavelength of 0.8 micrometer. A systematic study shows that, below 100 fs, an enhanced precision and a substantial decrease of the ablation threshold fluence in comparison to pulse laser processing with pulses in the picosecond and nanosecond range could be achieved. The physical mechanism and the technical relevance of this novel microtechnology is discussed.
Femtosecond laser pulses are close to industrial use. The advantages of ultrashort laser pulses for micromachining applications especially in the case of dielectric and biological samples down to pulse durations of 5 fs have been established. The current international standards of laser safety are primarily concerned with CW and pulsed lasers down to the nanosecond range. Therefore, human tissue and laser-protection equipment was investigated with respect to its resistance and protection performance for femtosecond laser illumination down to 30 fs. This included filter glasses for laser protection eyewear, polymer and textile materials used in curtains and guards. Bulk absorber filters can provide enough protection against laser radiation, give a sufficiently broad absorption spectrum. Materials are damaged more easily by femtosecond laser radiation. The need for sufficient spectral broadness as well as the different damage thresholds have to be included in international laser safety standards. This work should trigger the development of novel eye-protection devices that are lighter and ergonomically more acceptable than present commercial models.
In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)
Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.