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Eingeladener Vortrag
- nein (32)
Residual stress depth profiles of a cast nickel-base superalloy were measured by regarding the deflections occurring in plate-shaped specimens while successively removing layers from the machined or treated surface by electropolishing. The results are in good agreement with previous findings showing (i) the influence of grinding parameters on the width of so-called white layers, which correspond to steep gradients of residual tensile stress, and (ii) a broad zone of compressive residual stress in the case of shot peening.
As humanity contemplates manned missions to Mars, strategies need to be developed for the design and operation of hospitable environments to safely work in space for years. The supply of spare parts for repair and replacement of lost equipment will be one key need, but in-space manufacturing remains the only option for a timely supply. With high flexibility in design and the ability to manufacture ready-to-use components directly from a computeraided model, additive manufacturing (AM) technologies appear extremely attractive. For the manufacturing of metal parts, laser-beam melting is the most widely used AM process. However, the handling of metal powders in the absence of gravity is one prerequisite for its successful application in space. A gas flow throughout the powder bed is successfully applied to compensate for missing gravitational forces in microgravity experiments. This so-called gas-flow-assisted powder deposition is based on a porous Building platform acting as a filter for the fixation of metal particles in a gas flow driven by a pressure difference maintained by a vacuum pump.
Synthesis of Molybdenum and Niobium Mono- and Binary Silicides by the Method of SHS-Metallurgy
(2016)
The process of self-propagating high-temperature synthesis of the Mo–Nb–Si silicides from the powder mixtures has been investigated. Based on performed experiments, the composition of powder mixtures as well as technological parameters are proposed which provide the synthesis of monosilicides MoSi₂, NbSi₂, and binary silicides Mo₁-хNbxSi₂ with different ratios of Nb/Mo by adding different contents of MoO₃ and Nb₂O₅. Microstructure and phase compositions of the obtained silicide ingots are characterized by scanning electron microscopy, electron probe microanalysis, X-ray diffraction, and backscatter electron diffraction.
Electron Back Scatter Diffraction (EBSD) is a very versatile analytical technique allowing for the characterization of material structure. Historically, diffraction images (Kikuchi patterns) registered during EBSD analysis were solved using Hough/Radon transformation. The last decade brought several novel techniques of experimental pattern analysis, focusing entirely on image analysis routines such as pattern matching, or various variants of High-Resolution EBSD. However, all the above-mentioned techniques require prior knowledge of the material structure to perform orientation analysis. The recently presented algorithm employed in Crystallographic Analysis of Lattice Metric (CALM) software, effectively removes this limitation enabling a standard-less analytical approach in EBSD systems. At its core, the CALM technique couples accurate detection of the Kikuchi bands position, with a rigid construction of reciprocal lattice resulting from translational crystal symmetry. A unique characteristic of the methodology also gives an opportunity for application in the analysis of continuous lattice changes, for example tetragonality mapping. During mapping, however, the geometry of the gnomonic projection (represented by the projection center) is continuously altered decreasing overall algorithm efficiency. The work presents an analysis of the projection center in terms of precision and accuracy.
We analyse the signal formation process for scanning electron microscopic imaging applications on crystalline specimens. In accordance with previous investigations, we find nontrivial effects of incident beam diffraction on the backscattered electron distribution in energy and momentum. Specifically, incident beam diffraction causes angular changes of the backscattered electron distribution which we identify as the dominant mechanism underlying pseudocolour orientation imaging using multiple, angle-resolving detectors. Consequently, diffraction effects of the incident beam and their impact on the subsequent coherent and incoherent electron transport need to be taken into account for an in-depth theoretical modelling of the energy- and momentum distribution of electrons backscattered from crystalline sample regions. Our findings have implications for the level of theoretical detail that can be necessary for the interpretation of complex imaging modalities such as electron channelling contrast imaging (ECCI) of defects in crystals. If the solid angle of detection is limited to specific regions of the backscattered electron momentum distribution, the image contrast that is observed in ECCI and similar applications can be strongly affected by incident beam diffraction and topographic effects from the sample surface. As an application, we demonstrate characteristic changes in the resulting images if different properties of the backscattered electron distribution are used for the analysis of a GaN thin film sample containing dislocations.
We demonstrate the determination of crystal chirality using electron backscatter diffraction (EBSD) in the scanning electron microscope. The chirality of a-quartz as a space-group-dependent property is verified via direct comparison of experimental diffraction features to simulations using the dynamical theory of electron diffraction.
Analysis of Kikuchi band contrast reversal in electron backscatter diffraction patterns of silicon
(2010)
We analyze the contrast reversal of Kikuchi bands that can be seen in electron backscatter diffraction (EBSD) patterns under specific experimental conditions. The observed effect can be reproduced using dynamical electron diffraction calculations. Two crucial contributions are identified to be at work: First, the incident beam creates a depth distribution of incoherently backscattered electrons which depends on the incidence angle of the beam. Second, the localized inelastic scattering in the outgoing path leads to pronounced anomalous absorption effects for electrons at grazing emission angles, as these electrons have to go through the largest amount of material. We use simple model depth distributions to account for the incident beam effect, and we assume art exit angle dependent effective crystal thickness in the dynamical electron diffraction calculations. Very good agreement is obtained with experimental observations for silicon at 20 key primary beam energy.
Crystal structures that show a broken symmetry in their cubic and hexagonal modifications are of great relevance for optoelectronic and photonic applications. This is why methods which are sensitive to non-centrosymmetric structures are important for analysis of these materials in technological applications.