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Epitaxial thin films of nitrogenated La0.65Sr0.30MnO3 were grown on MgO(100) substrates by pulsed laser deposition (PLD). The nitrogenation was achieved by a continuous nitrogen flow in the PLD chamber with pressures of up to 0.12 mbar. The chemical analysis of the samples regarding the exchange of oxygen by nitrogen was achieved by time of flight secondary ion mass spectrometry, sputtered neutral mass spectrometry (SNMS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) and yielded a content of incorporated nitrogen ranging from 0.6% to 3.8%. Without nitrogenation the electrical resistivity of La0.65Sr0.30MnO3 exhibited a metalinsulator (MI) transition at about 180 K. The magnetoresistance (MR) effect (ΔR/R(0)) was about -50% at the transition temperature. Our nitrogen contents affected the MI transition so as to completely disappear and resulted in a resistivity increase of more than three orders of magnitude as well. By carefully reoxidizing the samples with subsequent heat treatments in air the MI transition reappeared at lower temperatures and we found a continuously enhanced MR ratio for decreasing temperatures. MR ratios of more than -99% were observed for a magnetic field of 10 T. The results are interpreted as a percolation phenomenon of ferromagneticmetallic domains within an antiferromagneticsemiconducting matrix.
Dispersions of very small non-magnetic metal particles or inclusions in a non-magnetic semiconductor matrix are well known to produce unusually large and linear magnetoresistance effects. So far these materials were limited to the binary silver-rich chalcogenides Ag2Se and Ag2Te. In this contribution Ag3AuTe2 was selected as a first candidate for a ternary matrix material, thus offering enhanced capabilities for the generation of heterogeneous microstructure and spatially varying composition on the nanoscale. In gold-rich Ag3Au1.1Te2 two kinds of inhomogeneities are present, namely Au deposits with a size on the micron scale and an inhomogeneous distribution of Au and Ag within the matrix. The matrix consists of micron-sized grains with the structure type of Ag3AuTe2 as studied by electron microscopy. Like the binary silver chalcogenide phases, the material also shows a large and linear magnetoresistance effect. The transversal magnetoresistance effect was measured between 20 K and 270 K in magnetic fields up to B = 5 T. The results are discussed on the basis of existing models for a large and linear positive MR effect.
In the nonstoichiometric low-temperature phase of silver selenide a very small silver excess within the semiconducting silver selenide matrix in the order of 0.01% is sufficient to generate a linear magnetoresistance (LMR) of more than 300% at 5 T, which does not saturate at fields up to 60 T. Different theoretical models have been proposed to explain this unusual magnetoresistance (MR) behavior, among them a random resistor network consisting of four-terminal resistor units. According to this model the LMR and the crossover field from linear to quadratic behavior are primarily controlled by both the spatial distribution of the charge-carrier mobility and its average value, being essentially functions of the local and average compositions. Here we report measurements on silver-rich thin AgxSe films with a thickness between 20 nm and 2 µm, which show an increasing average mobility in conjunction with an enhanced MR for increasing film thickness. We found a linear scaling between the size of the transverse LMR and the crossover field, as predicted by the theory. For films thinner than about 100 nm the MR with field directed in the sample plane shows a breakdown of the LMR, revealing the physical length scale of the inhomegeneities in thin AgxSe devices.
The determination of magnetic distortion fields caused by inclusions hidden in a
conductive matrix using homogeneous current flow needs to be addressed in multiple tasks of
electromagnetic non-destructive testing and materials science. This includes a series of testing
problems such as the detection of tantalum inclusions hidden in niobium plates, metal inclusion in
a nonmetallic base material or porosity in aluminum laser welds. Unfortunately, straightforward
tools for an estimation of the defect response fields above the sample using pertinent detection
concepts are still missing. In this study the Finite Element Method (FEM) was used for modeling
spherically shaped defects and an analytical expression developed for the strength of the response
field including the conductivity of the defect and matrix, the sensor-to-inclusion separation and the
defect size. Finally, the results also can be useful for Eddy Current Testing problems, by taking the
skin effect into consideration.