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Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
(2022)
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.
Ellipsometry is a powerful tool, which allows the investigation of material properties over a broad spectral range. Over the course of several years, the ellipsometry lab at BAM has become an accredited testing lab according to ISO/IEC 17025 laying bare the need of better methods for accuracy and traceability. Despite its wide range of application in both research and development as well as industry, there have been no generally accepted standards dealing with model validation and measurement uncertainties.
Based on the first German standard DIN 50989 – 1: 2018 Ellipsometry - Part 1: Principles (currently international standard ISO 23131: 2021) and under consideration of GUM [1] a series of standards for ellipsometry was developed. The entire 6-part series covers several model-based application cases. This standards series avoids having narrow and material specific application cases but instead classifies applications of ellipsometry according to the sample complexity. The concept of ellipsometric transfer quantities (Ψ and Δ or alternatively the elements of transfer matrices) is implemented in the series. For each application case a model-based validation strategy was developed. Thus, the standards are applicable to all materials, instruments and measuring principles.
The uniform structure concept of the series facilitates its practical applicability for users. The standards include the model-based GUM-compliant determination/estimation of the measurement uncertainties. In addition, the appendices of the documents contain numerous measurement and simulation examples as well as recommendations for measuring practice.
In this contribution we present the application cases and basic structure of the standards developed in collaboration with Accurion GmbH and SENTECH Instruments GmbH in the project SNELLIUS.
Im Vorhaben SNELLIUS wurden in enger Zusammenarbeit der BAM mit den Firmen Accurion und SENTECH Instruments aufbauend auf der Norm DIN 50989-1 „Ellipsometrie - Teil 1: Grundlagen; Ellipsometry – Part 1: Principles“ insgesamt fünf Normenentwürfe erarbeitet, die fünf Modell-basierten Anwendungsfällen der Ellipsometrie entsprechen. Unter Berücksichtigung des neuartigen Modell-basierten Normungskonzepts wurde in den Normenentwürfen erstmals eine GUM- und DIN EN ISO/IEC 17025:2018 konforme Bestimmung bzw. Abschätzung der Messunsicherheit umgesetzt. Dies erforderte neben der textlichen Erstellung auch umfangreiche experimentelle Arbeiten bei den Firmen, Vergleichsversuche und komplementäre Modell- und Datenevaluierungen, da sowohl die verwendete ellipsometrische Hardware (unterschiedliche ellipsometrische Funktionsprinzipien) als auch die ellipsometrische Software (Modell-Randbedingungen, Fitalgorithmus) firmenspezifisch zum Teil sehr unterschiedlich sind. Hierbei mussten in einem Konsensprozess Lösungen gefunden werden, die die beiden deutschen Ellipsometer-Anbieter Accurion (Imaging-Ellipsometrie) und SENTECH Instruments (Mapping Ellipsometrie) gleichermaßen akzeptieren konnten und die zudem einen Transfer auf die Internationale Ebene (ISO Norm) ermöglichen, also vom Grundsatz her auch auf weitere Ellipsometerhersteller wie (J. A. Woollam Co., USA; SEMILAB, Ungarn; HORIBA, Japan) mit wieder anderen ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen anwendbar sind. Die weitgehende Unabhängigkeit von ellipsometrischen Funktionsprinzipien, Hard- und Softwarelösungen wurde dadurch erreicht, dass normativ festgelegt wurde, dass die ellipsometrischen Größen PSI und DELTA im Sinne von DIN ENISO/IEC 17025 als Rohdaten fungieren.
Ellipsometry enables the investigation of material properties over a broad spectral range. As a fast and non-destructive method, it is widely used in industry for quality assurance. Despite the wide application of ellipsometry and its high industrial relevance there are some material-specific standards and there have been no generally accepted standards dealing with model validation and measurement uncertainties. The first German standard DIN50989-1: 2018 Ellipsometry – Part1: Principles (currently international standard ISO 23131: 2021) marks the beginning of a 6-part standard series for ellipsometry, which was developed under consideration of GUM.
Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
(2022)
Recent developments in power electronics require the use of new wide bandgap compound semiconductors. Silicon carbide (SiC) is one of the most promising materials for power electronics due to its outstanding properties and commercial availability. Some types of defects in the SiC substrates or homoepitaxial SiC layers can affect the performance of electronic devices in a serious manner or make its operation even impossible. Optical methods such as imaging ellipsometry (IE) and white light interference microscopy (WLIM) were applied for fast and non-contact investigation of defects in the epitaxially grown 12 µm 4H-SiC layers on 4H- SiC substrates.
Ellipsometry has become a powerful measurement tool in semiconductor industry since the sixties of the last century.
Early standardization activities focused exclusively on SiO2/Si (ASTM F 576-01, SEMI 3624). The first generic standard dealing with ellipsometry is DIN 50989-1:2018 Ellipsometry – Part 1: Principles. Standardization is a prerequisite for accreditation according to DIN EN ISO/IEC 17025 and the evaluation of uncertainty budgets.
The presentation demonstrates an application of multi-scale optical imaging methods such as spectroscopic imaging ellipsometry and white light interference microscopy for the investigation of wide-bandgap semiconductors for power electronics. The capabilities of these methods for the development of new reference calibration samples for scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM) are discussed.
Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid–liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid–liquid interfaces and electrochemical activity.
Climate change and increasing demand for electricity require the use of power electronics based on new wide bandgap (WBG) compound semiconductors. Power electronics devices are used in numerous application areas to control and convert electric energy. These may include generation and distribution of renewable energy for green hydrogen, electrification of transport or 5G communication. WBG electronics have much higher efficiency than the silicon-based ones and can operate at higher power densities, voltages, temperatures and switching frequencies with low energy losses. However, defects in the semiconductors can considerably affect the performance of power electronic devices or make their operation even impossible. The presentation will show the application of spectroscopic and imaging ellipsometry as well as white light interference microscopy for defect characterisation in SiC, GaN and Ga2O3 over a wide wavelength range.
We used parameterized modelling of ellipsometric transfer parameters to determine the dielectric properties of bulk materials and thin layers. Imaging ellipsometry offers more information and is an advanced variant of optical microscopy, combining the lateral resolution of optical microscopy with the extreme sensitivity to surface and interface effects of ellipsometry. Surface topography and morphology of different types of defects were additionally investigated with imaging white light interference microscopy. Modern electronic thin film components require complex surface analysis methodologies and hybrid metrology. Hybrid measurement techniques enable fast and non-destructive traceable characterisation of thin film compound semiconductors as well as accurate detection and identification of defects. This methodical approach leads to a better understanding of the materials themselves and of the defect formation mechanisms during manufacturing.
This work aims to enable highly reproducible manufacturing of compound semiconductor power electronics as well as operation monitoring to ensure failure-safety of electronic systems in power electronic devices.
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on glass; n,k 0.191–1.69 µm
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on Si wafer, top; n,k 0.191–1.69 µm
Optical constants of In2O3-SnO2 (Indium tin oxide, ITO)
Minenkov et al. 2024: on Si wafer, bottom; n,k 0.191–1.69 µm
The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis.
Ellipsometry is a very powerful tool used for accurate material investigation in a wide wavelength range. It is a non-destructive and fast method. Imaging ellipsometry as a combination of optical microscopy and ellipsometry enables spatially resolved measurements when determining the layer thickness and dielectric properties of thin layers. It is known for its high polarisation sensitivity and high contrast for the surface structures. In this contribution we show the application of the imaging ellipsometry for detection of defects in energy materials and quality validation of possible reference materials for nano-electronics.
Defects in wide bandgap semiconductors, in homoepitaxial SiC and heteroepitaxial GaN layers on transparent SiC substrates, can be successfully detected and classified by means of imaging ellipsometry. Correlation of imaging ellipsometry results with results from complementary techniques such as white light interference microscopy as well as atomic force microscopy contribute to understanding of surface topography and defect formation mechanisms. We discuss the potential of different methods for analysing ellipsometric map data for monitoring the defect densities.
Electric properties of materials at the nanoscale can be investigated by means of scanning probe microscopy methods such as scanning microwave microscopy and conductive atomic force microscopy. However, development of new robust and easy-to-use calibration methods and calibration standards is essential to increase the traceability of these methods and allow their broad application in industry. We show how imaging spectroscopic ellipsometry can be used for development and monitoring of processing quality of patterned reference samples based on indium tin oxide (ITO) layer with different thickness and conductivity.
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.
Ellipsometry as optical metrology method for analysis of reference materials for nanoelectronics
(2024)
Electrical properties of materials at the nanoscale can be characterized using scanning microwave microscopes (SMM) and conductive atomic force microscopes (C AFM). However, the measurement results are difficult to compare since different setups and different reference standards are used. The development of new “out-of-lab” reference standards can contribute to the traceability and reliability of these scanning probe microscopy methods (SPM) and facilitate their broader industrial application.
In this study, we discuss the capability of optical methods such as ellipsometry for the characterization of existing and the development of new reference calibration samples for scanning microwave microscopy. Ellipsometry is a fast and non-destructive method, which enables very accurate determination of the layer thickness and the dielectric functions of the materials. Imaging ellipsometry is suitable for spatially resolved measurements when analyzing thin layers in microstructured samples.
We show how the electrical resistivity of indium tin oxide (ITO) layers in newly designed resistive calibration samples can be obtained from spectroscopic ellipsometric measurements. The extension of the measurement range into the mid-infrared region was necessary when analyzing ITO layers with low conductivity. This parameter was obtained by fitting a Drude function describing the absorption of the free carriers. The impact of the coating process conditions on the layer properties is discussed.
Imaging ellipsometry was applied for the characterisation of thin ITO and SiO2 layers in microstructured resistive and capacitance calibration kits. The uncertainties of determined layer thicknesses were specified according to standardized practice guides used in ellipsometry. We show how statistical fingerprint analysis of the measured ellipsometric transfer quantities can be used to validate the quality of potential reference materials for nano-electronics and to monitor the processing of structured samples.