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Thin films of MgF2 have been deposited on silicon wafers in optical quality with a novel sol-gel deposition process at temperatures as low as 100 °C. The properties of the fluoride layers are compared to bulk MgF2 with respect to the optical constants. By employing spectroscopic mapping ellipsometry, the uniformity of the thickness of fluoride layers is confirmed to be within acceptable limits for optical applications. The optical constants are close to the bulk data. High-quality low-index films of suitable and homogeneous thickness have already been produced on a laboratory scale.
Dielectric, anti-reflective or high reflective systems consist of low and high refractive index layers. Common systems are oxides. The preparation of low refractive index MgF2-films of optical quality by means of an anhydrous low temperature solgel synthesis is presented. The MgF2-sol is prepared by spin-coating on silicon and glass substrates. Various film thicknesses between 20 nm and 435 nm have been deposited. It has been shown that the thickness increase is proportional to the number of coating steps. The deposited MgF2-films consist of 10 nm to 20 nm large nanoparticles and have smooth surfaces with an average roughness (Ra) of (1.7 ± 0.3) nm. The optical constants n and k of the films are in agreement with the literature data of bulk-MgF2.
MgF2 and TiO2 single layers and layer stacks were produced by a spin-coating sol-gel process. The final temperature treatment was carried out at 100 °C. The layers were deposited onto silicon and fused silica substrates and were analysed by means of atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ellipsometry, and UV-vis transmission spectroscopy. MgF2 and TiO2 single layers have morphological and optical properties comparable with physical vapour deposited layers. By using spectroscopic mapping ellipsometry, a good inter- and intra-sample homogeneity was confirmed. Multiple deposition steps result in a linear increase of layer thickness. Various films were deposited with thicknesses between 25 nm and 350 nm.
It was shown that the low temperature sol-gel process results in films of optical quality. Anti-reflective and high reflective layer stacks consisting of MgF2 and TiO2 were designed and can be produced now by a sol-gel process, whereas the MgF2 layers in the layer stacks contains also traces of MgF2-2xOx.