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- Inverted solar cells (1)
- Low band-gap (1)
- Optical modeling (1)
- Organic solar cells (1)
- PCPDTBT (1)
- Radiation protection (1)
- Ultrashort pulsed laser (1)
- X-ray emission (1)
- X-ray energies (1)
- X-ray spectrum (1)
Organisationseinheit der BAM
Ultrashort pulse laser processing can result in the secondary generation of unwanted X-rays if a critical laser irradiance of about 10^13 W/cm^2 is exceeded. Spectral X-ray emissions were investigated during the processing of tungsten and steel using three complementary spectrometers (based on CdTe and silicon drift detectors) simultaneously for the identification of a worst-case spectral scenario. Therefore, maximum X-ray photon energies were determined, and corresponding dose equivalent rates were calculated. An ultrashort pulse laser workstation with a pulse duration of 274 fs, a center wavelength of 1030 nm, pulse repetition rates between 50 kHz and 200 kHz, and a Gaussian laser beam focused to a spot diameter of 33 µm was employed in a single pulse and burst laser operation mode. Different combinations of laser pulse energy and repetition rate were utilized, keeping the average laser power constant close to the maximum power of 20 W. Peak irradiances ranging from 7.3 × 10^13 W/cm^2 up to 3.0 × 10^14 W/cm^2 were used. The X-ray dose equivalent rate increases for lower repetition rates and higher pulse energy if a constant average power is used. Laser processing with burst mode significantly increases the dose rates and the X-ray photon energies. A maximum X-ray photon energy of about 40 keV was observed for burst mode processing of tungsten with a repetition rate of 50 kHz and a peak irradiance of 3 × 10^14 W/cm^2.
We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM
blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of
15 mA/cm², 10% larger than in corresponding standard devices. Modeling of the optical field distribution
in the different device stacks proved that this enhancement originates from an increased absorption of
incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct
comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs
of ~70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting
efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the
photovoltaic properties with layer thickness was measured for both device architectures, attributed to
incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices
based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than
7% provided that recombination losses can be reduced.