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Paper des Monats
- ja (2)
We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM
blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of
15 mA/cm², 10% larger than in corresponding standard devices. Modeling of the optical field distribution
in the different device stacks proved that this enhancement originates from an increased absorption of
incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct
comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs
of ~70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting
efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the
photovoltaic properties with layer thickness was measured for both device architectures, attributed to
incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices
based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than
7% provided that recombination losses can be reduced.
The aim of this study is to develop nanometer-thin epoxy-based films on aluminium alloy AA2024-T3 as a model coating system for high resolution corrosion studies. Spin coating was used for the layer-by-layer (LbL) deposition of poly-(ethylenimine) (PEI) and poly([o-cresyl glycidyl ether]-co-formaldehyde) (CNER) bilayers. The film chemistry and the cross-linking process were characterized by means of Fourier-transform infrared spectroscopy (FTIR).
Ellipsometric data confirmed the linear increase of film thickness. The potentiodynamic polarization and electrochemical impedance spectroscopy (EIS) results indicate the improvement of the film barrier properties with increasing film thickness. Mapping of the topography and the volta potential was performed by means of scanning Kelvin probe force microscopy (SKPFM).
The results indicate the presence of a homogeneous film structure, while the intermetallic phases can still be identified below the coating. The SKPFM Analysis confirmed that the model films are suitable for investigation of corrosion processes at the coating/metal interface.
Mechanical stress often accelerates the failure of polymer materials. The aim of this research is to study the interaction between the sealing material FKM and biofuels B10 (heating oil with 10% biodiesel). The mechanical stress test was carried out in a special apparatus. Both mechanical and non-mechanical stress tests were conducted on specimens at 20, 40, and 70 °C for 28 days to document changes in mass, volume, and tensile properties. Both increasing temperature and mechanical stress have a significant effect on the tensile strength of the FKM polymer when exposed to B10. The combination of increasing temperature and mechanical stress induced rupture within 2 h. It was also established that FKM polymer with pre-exposure in B10 survived longer during mechanical stress compared to specimens exposed only to air. With the support of infrared (IR) spectroscopy, we were able to confirm the penetration of B10 into the FKM polymer.
Auf dem Weg zu Industrie 4.0: Bestimmung von Messunsicherheitsbudgets in der Oberflächentechnik
(2019)
Vorgestellt wurde die Bestimmung von Messunsicherheitsbudgets für sehr unterschiedliche physikalische Größen, die in der Oberflächentechnik von hoher Relevanz sind: Stufenhöhe h, Schichtdicke d, Eindringhärte HIT und Haftfestigkeit. Die Unterschiede betreffen die Art der Prüfmethodik (optisch zerstörungsfrei vs. mechanisch invasiv/zerstörend), die laterale Größe des Integrationsgebietes der Messung (lokal: nano bis sub-mikro vs. global: mikro bis makro) und die Art der Bestimmung von Messunsicherheitsbudgets (physikalische Größen: direkt rückführbar; Werkstoffkenngröße: genormt; Systemkenngröße: genormt).
Im Rahmen von Industrie 4.0 werden ausgehend der geforderten Spezifikation des beschichteten Produkts (Mittelwert mit Vertrauensbereich oder Mindestwert) durchgehende Toleranzbänder zur Oberflächenmodifizierung/Beschichtung des Substrats, einhergehend mit Prozessfenstern, die diese Toleranzbänder garantieren, erforderlich, die zuverlässig erfasst werden müssen. Die Frage der anzuwendenden Mess- und Prüftechnik und die damit notwendige Betrachtung von Messunsicherheitsbudgets ist für die Digitalisierung von Konditionierungs-, Zustands-, Regel- und Steuergrößen unverzichtbar. Mit Blick auf die Einhaltung von Prozessfenstern und die dafür notwendige Prozessführung wird technologisches Kern-Know-how digitalisiert, das es unbedingt zu schützen gilt. Nur lokale Netze können diese Sicherheit garantieren, in globalen Netzen ist die Datensicherheit bestenfalls maximierbar
In this work, thin iron doped tin oxide layers (3–6 nm) were investigated with regard to gas sensitivity by means of surface plasmon resonance (SPR) effect with ellipsometric readout. The experimental set-up was a Kretschmann configuration with gold as metal layer. The sensor system was exposed to different concentrations of methane in the low ppm range and the sensor response of an uncoated gold layer compared to a gold layer coated with iron doped tin oxide. The additional layer effects stability with regard to drift behavior of the sensor and an increase in sensitivity. Furthermore, the sensor is able to detect the toxic gas carbon monoxide in low concentration range (down to 0.5 ppm). The thin layers were investigated by X-ray photoelectron spectroscopy, secondary electron microscopy and spectroscopic ellipsometry. The possible mechanisms taking place on the surface are discussed.
Standardisation of ellipsometry is mainly based on three documents: pioneering work at NIST [1] on film standards, a publicly available specification and stan-dard testing procedure [2] for real-world samples by BAM and a standard specification for integrated metrology by SEMI [3]. Other activities refer to inter-laboratory comparisons for selected layer/substrate systems and analytical methods including ellipsometry [4] and the development of combined standards for thickness d and step height h [5].
Generally, precision of ellipsmetry in terms of raw data Ψ and Δ meets the major demands for all ellipsometric principles (RPE, RAE, PME, RCE, NE).
As a result, fingerprint capabilty is al-most perfect for various layer/substrate systems. However, this is not true for accuracy in terms of physical quantities such as thickness d, optical (n, k) and dielectric constans (ε1, ε2,) as modelling is required. Hence, the layer/substrate and material dependent validation of models is nowadays a key issue.
In contrast to the sub-nanometer sensi-tivity in vertical direction, the effective lateral resolution of almost all ellipso-metric principles except for imaging null
ellipsometry is rather poor, usually be-yond 100 µm.
Hence, nanometer-scaled homogeneity testing and the measurement of micro- and nanopatterned structures is not feasible by standard configurations.
Functionality of optical systems requires optical coatings of
high quality which have to be adapted to the application in
terms of the performance of optical parameters such as
reflectivity (AR, low, defined, high), the substrate material of
interest (polymers, ceramics, and glass), the environmental
conditions (such as temperature or humidity), and the service
conditions (such spectral range and power density). Moreover,
in many cases, additional non-optical requirements have
to be met, including mechanical features such as scratch
resistance, hardness and modulus.
Consequently, thickness and overall uniformity requirements
are steadily increasing. In general, these demands can usually
not be achieved by a single film or coating. Instead, films with
specific design features (such as gradients), layer stacks and
multilayers are a prerequisite for high quality layers and their
reliability. For the development of such layer systems, a
versatile cluster deposition system consisting of three clusters
and a cluster-to-cluster handler has been designed. Besides a
PECVD cluster for DLC coatings, two PVD clusters implement
ion assisted electron beam evaporation and plasmabased
sputter technology. In addition to metallic films, preparation
of oxide and nitride optical coatings (SiO2, TiO2, Ta2O5,
ITO, Al2O3, TiN, AlN) in various process modifications (nonreactive,
partially reactive, full-reactive; rf-, dc-, mf- mode;
PEM control) has been carried out.
Within this paper, the effect of several process parameters on
layer quality (optical constants, density, and uniformity) is
discussed for selected applications examples (AR- and HR
coatings, applications at elevated temperatures and applications
of enhanced mechanical performance).
It has been shown that specific features of ion and plasma
assisted PVD processes, including ion-beam and plasma preand
post-treatment of substrates and layer systems, may
widen the application range and improve functionality features
of given coating/substrate systems.
Die Oberflächentechnik ist eine Schlüsseltechnologie in nahezu zu allen industriellen Branchen. Mit Ausnahme der mechanischen Stabilität, die das Substrat bereitstellt, werden verschiedenartigste Funktionen materialsparend, zum Teil hochintegriert mit maßgeschneiderten Schichtdesigns unter Ausnutzung von Nano- und Quanteneffekten auf Oberflächen appliziert. Ein Großteil der Fertigungskosten in der Mikro- und Nanotechnik wird durch Reinräume und die Umsetzung ausgeklügelter Reinigungsstrategien zur Vermeidung von Restverschmutzungen und partikulären Belegungen
verursacht, da diese unweigerlich zum Bauteilversagen führen. Die Validierung des Reinigungszustandes ist somit von zentraler Bedeutung für die Schichtqualität und Produktfunktionalität. Dies gilt in Abhängigkeit von der Applikation und den vertikalen Schicht- bzw. lateralen Strukturdimensionen sowohl für Fertigungsprozesse im Reinraum als auch für solche in robuster Umgebung. In der Praxis kommt es häufig vor, dass man mikroskopisch scheinbar saubere Substrate erst durch die Beschichtung „enttarnt" und dann Defekte oft mit bloßem Auge sichtbar werden. Noch problematischer ist der Einbau von Verunreinigungen während der Schichtabscheidung, die zunächst nicht sichtbar sind, dann aber zum Bauteilversagen führen.
Public, hidden, and forensic features either encoded or directly legible are used for authentication. Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capability that may establish the new security level 'encoded forensic'. Different layer designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. spectroscopic response in the UV or IR), and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI). Physically uncloneable functions (PUF) could be realized as a result of a multi-material and a multi-parameter deposition approach as well as by means of specific design features of the Fabry-Perot layer stack. Hence, they are not subject to any reverse engineering strategies. Examples of stratified, micro-structured, and laser-modified Fabry-Perot layer systems are considered that may be used at all perception levels (e.g. human eye, bar code reader, and imaging ellipsometry) for authentication against product counterfeiting and related areas. --------------------------------------------------------------------------------------------------------------------
Zur Authentifizierung werden offene, versteckte und forensische Merkmale entweder codiert oder direkt auslesbar verwendet. Mit Fabry-Perot Schichtsystemen als Informationsträger in Kombination mit der abbildenden Ellipsometrie als optischem Auslesesystem steht ein 'all-in-one' Fälschungsschutz-System zur Verfügung, das ein neues Sicherheitsniveau 'kodiert-forensisch' darstellt. Es werden unterschiedliche Schichtdesigns beschrieben, mit denen alle drei Sicherheitsniveaus realisiert werden können: offene Merkmale (z.B. Farbe und Kippeffekt), die mit dem menschlichen Auge wahrnehmbar sind, versteckte Merkmale (z.B. die spektrale Antwort im Sichtbaren oder im IR) sowie forensische Merkmale (ellipsometrische Größen Ψ und Δ als Funktion der Wellenlänge λ und des Einfallswinkels AOI).
Physikalisch nicht klonbare Funktionen (PUF) können im Ergebnis einer Multi-Material- und Multi-Parameter Beschichtungsstrategie sowie durch spezifische Design-Merkmale des Fabry-Perot Schichtsystems realisiert werden. Folglich sind solche Schichtsysteme dem 'reverse engineering' nicht zugänglich. Es werden Beispiele für lateral ausgedehnte, mikrostrukturierte und Laser modifizierte Schichtsysteme auf verschiedenen Ausleseniveaus (menschliches Auge, Barcode-Lesegerät, abbildendes Ellipsometer) vorgestellt, die zur Authentifizierung von Produkten und verwandte Gebiete geeignet sind.
The irradiation of ~0.9-µm-thick hydrogenated amorphous carbon (a-C:H) layers deposited on silicon substrates with single femtosecond (fs) laser pulses (35 fs pulse duration, 790 nm centre wavelength) in air is studied experimentally. Irradiation spots have been generated with different peak fluences and subsequently investigated by optical topometry, micro Raman spectroscopy and microscale mechanical indentation in order to evaluate their microscopic, topographical, structural and mechanical properties (e.g. elastic modulus). By this multi-method approach, a clear separation of different effects (delamination and graphitisation) becomes possible. The joint application of mechanical and spectroscopic techniques provides unique insights into the effects of the fs-laser radiation on the carbon layer.
The thickness measurement of transparent layers with optical techniques is very problematic. The observed deviations can easily reach 100% of the layer thickness to be measured. In order to analyse these deviations, tactile reference measurements have been developed. The proposed method is based on contact mode measurements with low contact pressure. With stylus instruments, this can be realized either by using the recommended tip radius of 2 µm and very small probing forces in the micronewton range (and low scanning speeds of 50 µm s-1) or by using the recommended probing force of 750 µN, but a large probing tip radius. Three metal layers on silicon or silicon dioxide and two polymer resist materials on a thin chromium adhesive layer on silicon are used as artefacts. The comparison of the optical measurements with the tactile reference values disclosed deviations of the optical measurements of up to 195% of the layer thickness. Layer thicknesses were between 200 nm and 4 µm. This paper analyses the deviations of two white light interference microscopes, one phase shift interference microscope, one confocal microscope, one autofocus sensor, a chromatic sensor, an interferometric film thickness sensor and one spectroscopic ellipsometer. Simple and well-known expressions for the description of the observed deviations are presented and discussed. The order of magnitude of the observed deviations can be described well by these correction formulas but further investigations are necessary in order to better understand the systematic deviations of optical surface measuring instruments on non-cooperating surfaces.
Single-pulse damage thresholds of hydrogenated amorphous carbon (a-C:H) films were measured for 8-ns laser pulses at 532-nm wavelength. Layer thicknesses from below the optical penetration depth to above the thermal diffusion length (60 nm13 µm) were examined. After correction of the damage-threshold values for the fraction of energy effectively absorbed by the material, the damage threshold was found to increase linearly with the layer thickness, also for film thicknesses below the optical penetration depth of a-C:H. The threshold fluence reached the bulk value for a layer thickness equal to the thermal diffusion length. The thermal diffusion coefficient was obtained from fitting the experimental data. Several phenomena like graphitization, blistering, exfoliation, and ablation were observed for different fluence regimes and film thicknesses.
Hybrid optical measurement technique for detection of defects in epitaxially grown 4H-SiC layers
(2022)
Recent developments in power electronics require the use of new wide bandgap compound semiconductor. We demonstrate the use of the ellipsometry and white light interference microscopy to detect defects in epitaxially grown SiC layers on SiC substrates. Such hybrid optical metrology methods can be used to better understand the mechanism of the development of the defects as well as their effects on the material´s optoelectronic properties.
Critical defects, also known as device killers, in wide bandgap semiconductors significantly affect the performance of power electronic devices. We used the methods imaging ellipsometry (IE) and white light interference microscopy (WLIM) in a hybrid optical metrology study for fast and non-destructive detection, classification, and characterisation of defects in 4H–SiC homoepitaxial layers on 4H–SiC substrates. Ellipsometry measurement results are confirmed by WLIM. They can be successfully applied for wafer characterisation already during production of SiC epilayers and for subsequent industrial quality control.
Background: Gas sensors are very important in several fields like gas monitoring, safety and environmental applications. In this approach, a new gas sensing concept is investigated which combines the powerful adsorption probability of metal oxide conductive sensors (MOS) with an optical ellipsometric readout. This concept Shows promising results to solve the problems of cross sensitivity of the MOS concept.
Results: Undoped tin oxide (SnOx) and iron doped tin oxide (Fe:SnOx) thin add-on films were prepared by magnetron sputtering on the top of the actual surface plasmon resonance (SPR) sensing gold layer. The films were tested for their sensitivity to several gas species in the surface plasmon resonance enhanced (SPREE) gas measurement. It was found that the undoped tin oxide (SnOx) shows higher sensitivities to propane (C3H8) then to carbon monoxide (CO). By using Fe:SnOx, this relation is inverted. This behavior was explained by a change of the amount of binding sites for CO in the layer due to this iron doping. For hydrogen (H2) no such relation was found but the sensing ability was identical for both layer materials. This observation was related to a different sensing mechanism for H2 which is driven by the Diffusion into the layer instead of adsorption on the surface.
Conclusion: The gas sensing selectivity can be enhanced by tuning the properties of the thin film overcoating. A relation of the binding sites in the doped and undoped SnOx films and the gas sensing abilities for CO and C3H8 was found. This could open the path for optimized gas sensing devices with different coated SPREE sensors.
In this study, thickness related changes of the optical properties of doped tin oxide were studied. Two different sets of samples were prepared. The first set was doped with iron or nickel on silicon substrate with thicknesses of 29–56 nm, the second was iron doped on gold/glass substrate with 1.6–6.3 nm. The optical constants were determined by using spectral ellipsometry (SE) followed by modelling of the dielectric function with an oscillator model using Gaussian peaks. The analysis of the optical constants shows a dependence of the refraction and the absorption on the thickness of the doped tin oxide coating. In addition to the tin oxide absorption in the UV, one additional absorption peak was found in the near-IR/red which is related to plasmonic effects due to the doping. This peak shifts from the near-IR to the red part of the visible spectrum and becomes stronger by reducing the thickness, probably due to the formation of metal nanoparticles in this layer. These results were found for two different sets of samples by using the same optical model. Afterwards the second sample set was tested in the Surface Plasmon Resonance Enhanced Ellipsometric (SPREE) gas measurement with CO gas. It was found that the thickness has significant influence on the sensitivity and thus the adsorption of the CO gas. By increasing the thickness from 1.6 nm to 5.1 nm, the sensing ability is enhanced due to a higher coverage of the surface with the over coating. This is explained by the high affinity of CO molecules to the incorporated Fe-nanoparticles in the tin oxide coating. By increasing the thickness further to 6.3 nm, the sensing ability drops because the layer disturbs the SPR sensing effect too much.
Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon
(2021)
Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.
Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.
The different defect types on SiC samples are measured with various measurement methods including optical and tactile methods. The defect types investigated include particles, carrots and triangles and they are analyzed with imaging ellipsometry, coherent Fourier scatterometry and atomic force microscopy. Each of these methods measures different properties of the defects and they all together contribute to a complete analysis.
Surface damage and color centers generated by femtosecond pulses in borosilicate glass and silica
(2003)
Hydrogen-containing amorphous carbon layers as optical materials for the NIR and MIR spectral range
(2006)
On the use of plasma-deposited thin films for gas sensors with read-out based on the SPR effect
(2012)
Qualitätssicherung für Schichtsysteme aus Ionenstrahl- und Plasmaprozessen mit optischen Methoden
(2005)
Optical vs. mivroscopic properties of ECR and RF bias generated amoephous hydrogenated carbon films
(2010)
Ellipsometry has been an extremely successful and fast expanding method in the past decades along with other related techniques using polarisation sensitive measurements. Opening new fields of application for a successful measurement technique brings some requirements and issues that have to be solved. From a metrological point of view, ellipsometry has the problem that uncertainties are difficult to determine for model-based analysis techniques in general. In this presentation, we will explore how the usefulness of polarimetric methods like ellipsometry can be increased.
Ellipsometry as a method could profit from several current developments which will be discussed in this presentation:
• Standardisation initiatives on national and international level developing standards for best practice when using ellipsometry. A series of at least six standards is currently developed on national German and international level covering different levels of sample complexity.
• Projects on traceability of ellipsometry and structured surface spectrometry as well as new dielectric function database initiatives.
• Metadata handling and data ontology providing a better framework for exchange and collaborative use of research data.
We will also explore the quantification of measurement uncertainty using examples from projects in which BAM is involved. Examples will be presented of multilayer and non-ideal materials as well as the determination of layer properties for technical applications such as thin layer catalysts and complex polymers. The definition of reference materials will be discussed.
A competitive advantage in the semiconductors industry is gained through the exploitation of new materials and processes, translating into improved components’ performances. This requires a metrological infrastructure allowing reliable nanoscale characterisation of new materials and devices, particularly in terms of their electrical parameters and properties. Traceability and reliability of nanoscale measurements stand as a major challenge for electrical properties (i.e. resistance, impedance) using conductive atomic force microscopy (C-AFM) and scanning microwave microscopy (SMM) techniques. The non-destructive analysis nature of these two methods is of paramount importance for the characterization of devices and components. However, the state of the art still lacks established measurement protocols, easy to use reference standards, well-defined best practice guides and easy to use 3D models to assess environmental and external stimulation effects. Moreover, costly instrumentation, particularly for high-frequency measurements, still hinders efficient advancements in these directions.
ELENA is a 3-years European project that aims at bringing solutions to the aforementioned difficulties. To achieve this goal, the project uses a combination of nanoscale electrodynamic scanning probe methods in combination with optical tools such as spectroscopic ellipsometry on several lateral length scales to determine the electrical properties of layers and small structures.
By means of an effective medium (EMA) based approach, it is possible to use spectroscopic ellipsometry to determine the mixing ratios between air and material in porous dielectrics and calculate a quantitative value of the porosity for these materials. As this method is model-based, it is very difficult to provide a quantitative measure for the accuracy of porosity values determined by this method. Valuable additional information can often be obtained by combining ellipsometry with other complementary methods. In the present study, the ellipsometry results were validated by Electron Probe Microanalysis (EPMA) with the option of layer analysis (by the socalled “STRATAGem” approach), gravimetry, and electron microscopy. We analysed porous TiO2 thin layers synthesised by means of a template synthesis approach (evaporation induced self assembly).
Ellipsometry measurements on porous samples are difficult to analyse due to the complexity of the models necessary. Often it is difficult to decide if the measured data contains enough information to successfully determine the target quantities (mixing ratio, dielectric function of the matrix material). One method to decrease the complexity of the fit and therefore use the measurement data most efficiently is a multi-sample analysis. In the present case, multi-sample analysis was used for determining the porosity factors of the individual layers while using one common set of dielectric function values for the matrix in all cases.
While the results of the fit analysis in this case can be used to show the feasibility and also the limitations of the multi-method approach, the porosity values themselves show a promising agreement between the independent methods. It can therefore be concluded that determining porosity values with ellipsometry is in accordance to other methods to the level of accuracy provided by the complementary methodologies.
In this presentation, we report on the Determination of the glass transition temperature of thin layers of Polyvinylmethylether (PVME) depending on the thickness of the polymer layer. The glass Transition of thin polymer layers is currently under much investigation due to the nano-confinement effects proposed to appear in dependence on the layer thicknesses in the nm range. The properties of the polymer, the temperature range, as well as the thicknesses range of the polymer layers pose a serious challenge to the investigation by means of
spectroscopic ellipsometry. By careful choice of experimental parameters, we were able to investigate the thickness change by temperature of PVME layers in the range between 2 and 300 nm and in the temperature range between 200 K and 340 K. By optimizing the analysis process, we were able to determine Tg values within this parameter range with sufficient accuracy to investigate the Tg change due to confinement effects.
Alongside the change of position of the glass transition with thickness, we discuss the details of the ellipsometric analysis and its implications for the resulting thermal properties of the thin polymer layers as well as the accuracy of the Tg value with respect to the method used in the analysis process.
Ellipsometry is well known as a highly sensitive and reproducible surface analysis technique. However, in a context of metrological applications, the most important property of a measurement process is accuracy, relying on statistical precision, (reproducibility) and trueness (in an absolute sense versus a given standard). The latter is much more difficult to achieve. In this presentation, we discuss the possibility of establishing ellipsometry in a diverse metrological landscape by means of defining standard procedures and best practice methodologies for the measurement and for calibration purposes. The most important task of this approach is to determine the model-inherent uncertainty, originating from parameter coupling. We achieve this by means of sensitivity analysis of the parameters resulting from the fit process. We discuss the definition of reference materials by which accuracy can be made available for ellipsometry, passed along between ellipsometry laboratories and for other measurement techniques. The determination of uncertainty is presented in this work for a number of examples involving difficult analysis models employed for samples from different production environments. We present a standardization initiative with the goal to disseminate this work into an international standard alongside an inter-laboratory study comparing the results for complex samples gained by laboratories with different instrumentation. We also present the results gained within EURAMET projects focused on the metrology of materials with strong non-idealities used in photovoltaics and other energy technology.
In the face of rising energy demand and the impending climate change the development of a sustainable, fossil-free fuel and chemical production is of global importance. One possible goal is the development of electrochemical conversion processes using catalysts. Porous materials play an important role in such energy applications. The key to the development of improved catalysts is a better understanding of the relations between their performance, stability and physico-chemical properties. However, the complex morphology of such catalysts constitutes a challenge even for modern analytical techniques. Spectroscopic ellipsometry (SE) is a versatile method for studying material properties by using appropriate models (e.g. film thickness, optical and electronic properties). The fact that the material properties cannot be taken directly from the measured spectra, the developed models have to be validated. In a first step, the model for the ellipsometric fit studies of a calcination series of mesoporous iridium oxide films (300 – 600 °C) was investigated and validated with respect to their material properties. Moreover, the electronic structures of the catalysts reveal a direct correlation with electrochemical activities. The development of an environmental cell offers the possibility of investigations under real conditions. This will allow changes in the optical and electronic properties during the electrocatalytic oxygen evolution reaction.
Ellipsometry is a valuable surface analysis tool with an unmatched sensitivity towards surface layer properties. In this presentation, an initiative is discussed to make ellipsometry also a metrological tool. This is usually seen as very difficult due to the model-based nature of the analysis process. By establishing standardisation and reference materials, ellipsometry can be made traceable and can also become a valuable part of the traceable thin film metrology landscape. This is important because this technique has much potential to determine complex material parameters much needed in the production of high-tech products.
By means of an effective medium (EMA) based approach, it is possible to use spectroscopic ellipsometry to determine the mixing ratios between air and material in porous dielectrics and calculate a quantitative value of the porosity for these materials. As this method is model-based, it is very difficult to provide a quantitative measure for the accuracy of porosity values determined by this method. Valuable additional information can often be obtained by combining ellipsometry with other complementary methods. In the present study, the ellipsometry results were validated by Electron Probe Microanalysis (EPMA) with the option of layer analysis (by the socalled “STRATAGem” approach), gravimetry, and electron microscopy. We analysed porous TiO2 thin layers synthesised by means of a template synthesis Approach (evaporation induced self assembly).
Ellipsometry measurements on porous samples are difficult to analyse due to the complexity of the models necessary. Often it is difficult to decide if the measured data contains enough information to successfully determine the target quantities (mixing ratio, dielectric function of the matrix material). One method to decrease the complexity of the fit and therefore use the measurement data most efficiently is a multi-sample analysis. In the present case, multi-sample analysis was used for determining the porosity factors of the individual layers while using one common set of dielectric function values for the matrix in all cases.
While the results of the fit analysis in this case can be used to show the feasibility and also the limitations of the multi-method approach, the porosity values themselves show a promising agreement between the Independent methods. It can therefore be concluded that determining porosity values with ellipsometry is in accordance to other methods to the level of accuracy provided by the complementary methodologies.
Surface analysis is still gaining importance, as most modern technology is in essence surface and thin film technology. In microelectronics and optics but also in many fields of energy storage and conversion, thin surface layers or structured surfaces are key components. Optical surface measurements are useful because of their reliability, robustness, and scalability – properties, which are especially desirable in a production environment. However, many of these methods take require considerable effort in data analysis. Spectroscopic ellipsometry (SE) is maybe the prime example of this class of methods. To combine the advantages of SE with metrological trueness and traceability, we combine it in a group of other methods, such as electron microscopy, instrumental surface analysis, X-ray diffraction.
This presentation will give an overview on the principles of SE, its available quantities and the general properties of this measurement technique. Several examples from current and past projects of BAM-6.7 will show how a measurement community involving ellipsometry can benefit many fields of interest, from polymer science to energy applications. In the context of creating a “measurement landscape”, standardisation and standard compliance play an important role. The efforts of BAM in standardisation and accrediting of ellipsometry will be shown demonstrating the possible impact on quality assurance in different fields of technology.
Ellipsometry is a highly valuable technology for bridging different measurement methods. As a fast, highly sensitive, and non-destructive optical technique with low environmental requirements, it is ideal for transporting measurement accuracy and for up-scaling measurements in the production environment. It can be used for highly precise determination of properties, material identity and correctness confirmation, as well as defect detection.
Comparable, traceable, and accurate electrical measurements, especially at small scales are one of the biggest challenges in the development of the electrical and electronic devices of the future.
In this project, we develop structured thin layer systems of the transparent conductive material indium tin oxide (ITO) to prove the concept of using these systems as standards for conductivity and permittivity. The layers are produced in a reactive magnetron sputtering process from raw ITO targets with additional oxidation achieved by oxygen injection. We present results of a study correlating the coating process conditions with the properties of the final layer material. We found that especially the temperature development during coating is of key importance and determines the layer properties to a large extent. We will discuss questions of homogeneity and reproducibility of the coating processes used. The finished layers undergo lithographic structuring and etching to produce patterns to serve as reference structures for scanning probe electrical measurements. TCOs have a large variety of applications. In this work we also study the usability of ITO for other purposes and investigate the stability of this material under application conditions.
Determining thermal transitions in thin polymer layers by means of spectroscopic ellipsometry
(2023)
Thin polymer layers have enormous technical significance as polymer coatings on materials are very cost-effective for tailoring properties of surfaces. Apart from technical aspects in their use, thin polymer layers can be used to determine dimensional aspects in properties of material, such as confinement effects.
In this work, we investigated several different polymer layer materials and determined their glass transition region by means of temperature-dependent spectroscopic ellipsometry. We have optimised our fitting procedure of the ellipsometric data produced in temperature ramp experiments. By this, we could measure the dependence of Tg on the layer thickness in a wide variety of thickness values, proving the existence of confinement effects in the investigated systems. We compare numerical methods for determining the location of the glass transition and discuss the possibilities of different analysis methods when determining thermal transitions. We also discuss the simultaneous existence of these transitions and annealing effects and the implications on the accuracy of the determined data.
New analytic ways to characterise mesoporous thin layers used in electrocatalytic water splitting
(2024)
Mesoporous materials are needed in many applications where a high specific surface area and adsorptive behaviour is needed. Important examples are separation techniques and barrier layers and catalysts. Electrochemical water splitting is the key technology for producing green hydrogen and there is no foreseeable alternative to this process for producing elementary hydrogen from green electrical power. Water electrolysis can be divided into the anodic Oxygen Evolution Reaction (OER) and the cathodic Hydrogen Evolution Reaction (HER). Both processes have to be heavily optimised to a large extent to avoid energy losses caused by overvoltage. The development of electrodes for these processes is especially difficult due to the many boundary conditions. Water splitting is a catalytic as well as electrochemical process. The contact area between the electrolyte and the electrode must be maximised maintaining the stability of the surface. Side reactions must be suppressed, and effective gas transport must be ensured. The whole process has to be tolerant with respect to temperature, harsh chemical conditions from the electrolyte as well as high current densities.
We present a hybrid analytical method combining several analytical techniques for determining the properties of thin layers of mixed oxides of the general composition Ir:TiOx. These materials are promising candidates for electrocatalytical top coatings of OER electrodes. To lower the costs of the electrolysers, the main goal is to lower the Ir content retaining the system efficiency. The main properties which are hard to determine are the porous volume fraction and the Ir:Ti element ratio. By a combination of electron microscopy, spectroscopic operando ellipsometry, ellipsometric porosimetry, and other techniques, we can determine key features of mesoporous thin layer materials. We aim to develop operando capable techniques used in process monitoring as well as measurement techniques optimised for accuracy. By developing reference materials, we support long term uptake of our methodology. This work can directly be used for optimising electrocatalytic layers and is a good example for the power of hybrid metrology for improving materials design.
Polydopamine (PDA) is a biological / biomimetic polymer which has spiked considerable interest in recent years. Its monomer is an important neurotransmitter and it is one of the strongest glues produced by biological organisms. Polydopamine is a candidate for several applications, mainly in the field of biology and medicine, but also - recently - for layer coatings with optical, electrical, and mechanical function.
In this work, we investigate PDA layers intended as reflectivity enhancers for mirror surfaces in X-ray astronomical observatories. It has previously been shown, that such X-ray telescopes can be improved by a coating of PDA in the thickness range of several nm. Accurate thickness determination is required to monitor and optimise the coating process. We use spectroscopic ellipsometry to determine first the dielectric function of the polydopamine layers using model coatings of sufficient thickness. This data is then used to accurately determine the layer thickness of much thinner PDA layers. This study resulted in data on the thickness and dielectric function of PDA layers that could lead to a better understanding of the correlation of layer thickness and layer properties depending on the process parameters.
Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines.
The challenge with CS technology is that most of the process technology has to be developed anew to the high standards required by electronic applications. Today, compound semiconductors can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). With this method, many different compounds with semiconducting properties can be synthesized. Additionally, this process technology is a direct thin layer deposition method. Therefore, complex multilayer systems can be generated directly by the deposition process and without the need of doping after growing.
There are a number of critical defects that can originate from the deposition process of these thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and number density, as well as to characterise defects for process optimisation.
We report here on the use of spectroscopic ellipsometry and imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN materials as well as oxidised SiC surfaces. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is called imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials.
If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry method like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis.
Compound semiconductors (CS) are promising materials for the development of high-power electrical applications. They have low losses, can withstand high temperatures and can operate at very high voltages and currents. This makes them a key technology for the electrification of many high energy applications, especially electromobility and HVDC power lines.
The challenge is that most of the process technology has to be developed specifically and tailored to the high standards required by electronic applications. Today, many different CS materials can be produced in thin layers on top of substrates fabricated from classical crystal growth processes that are already well established. A promising method for this is metal organic vapour phase epitaxy (MOVPE). This technology is a direct thin layer deposition method capable of producing complex multilayer systems directly from one deposition process without the need of doping after growing.
There are a number of critical defects that can originate from the deposition process when targeting electronic thin film devices. Within this project, we intend to develop new correlative imaging and analysis techniques to determine defect types, to quantify defect size and density, as well as to characterise defects for further process optimisation.
We report here on the use of spectroscopic and multispectral imaging ellipsometry to investigate defects in several different compound semiconductor materials used in high-power electronic devices. The materials we investigated are β-Ga2O3, SiC, GaN, AlN, and AlGaN as well as oxidised SiC. All of these materials have their typical defects and require optimised measurement and analysis schemes for reliable detection and analysis. Spectroscopic ellipsometry is a highly sensitive method for determining the thicknesses and dielectric function of thin layers, yielding potentially a high number of microscopic properties. The combined method between ellipsometry and optical microscopy is known as imaging ellipsometry and is especially powerful for the large amount of data it produces. We have analysed defects in SiC- and AlN-based thin film semiconductors as well as characterised the properties of different types of SiO2 layers created on top of SiC monocrystals. We developed ellipsometric models for the data analysis of the different semiconductor materials.
If the defects have geometric features, it is useful to combine the ellipsometric analysis with topometry methods like interference microscopy and scanning probe microscopy. We have successfully characterised function-critical defects in MOVPE SiC layers and correlated the findings with topography from WLIM measurements. We have developed an imaging ellipsometric measurement methodology that allows to estimate the relative defect area on a surface by a statistical raw data analysis.
In this workpackage of the ELENA project, we develop a way to express the measurement uncertainty of nanoscale determination of electrical propserties. The method developed aims to be usable for industrial contexts and described in technical documents and standards drafts. Standards and reference samples are used to make traceable measurements available for the end user.
The 7th International Conference on Spectroscopic Ellipsometry (ICSE-7) was held in Berlin in June 2016, jointly organised by ICSE and BAM. The publication of the proceedings special issue in Applied Surface Science follows this event. In the special issue, about 100 articles on current topics of optics and surface science related to ellipsometry, polarimetry, and similar techniques are presented, underpinning the high significance of these techniques for many fields of materials science.
Hydrogen-Containing Amorphous Carbon Layers as Optical Materials in the Near-IR Spectral Range
(2007)
Hydrogenated amorphous carbon layers were deposited on various substrates by means of a plasma CVD process with a RF substrate bias as well as an ECR plasma source. The optical properties of the a-C:H layers were obtained via spectroscopic ellipsometry and correlated with their mechanical and chemical properties. The layers from pure RF plasma exhibit a higher absorption constant in the visible spectral range and a higher refractive index. All layers are nearly transparent in the NIR spectral range making them candidates for optical thin layer systems. The laser damage behaviour of the a-C:H layers was investigated with ultrashort pulses. The damage thresholds were consistent with the absorption constants of the layers. Interesting damage morphologies were observed indicating a sensitivity of this experiment to sub-structures in the layer.
In this paper, safety-related experiments with ultra-short laser pulses (down to 30 fs) on various components
(goggles, curtains) for laser protection are presented. The damage and failure behaviour of
protective devices has been investigated dependent on practical conditions such as pulse duration, laser
.uence, pulse number, and repetition rate.
The e.ects of laser-irradiation on materials can be roughly divided into transient ones like laserinduced
transmission (LIT) or short-lived colour centres and permanent damages like the stable colour
centres and ablation. The former e.ects are particularly important for transparent devices like laser
goggles.
To obtain a complete overview on laser safety issues and the prevention of failure there are two
important .elds of investigation:
1. the e.ects of laser radiation on human eyes and skin, and
2. on the possible protection materials.
Both .elds have been addressed during the recently .nished German project SAFEST (safety aspects
in femtosecond technology). The amount of safety data available in the ultrashort pulse region has
been increased remarkably. This allows for a re-evaluation of known laser protection materials for this
region of pulse durations and for the evaluation of new designs that promise high protection levels
while being light-weight and convenient to use.
The laser ablation behaviour of ion-doped glass filter materials under irradiation with femtosecond laser pulses was investigated with respect to spot size and repetition rate. The damage threshold fluence of Schott BG18 depends on the size of the irradiated area. The effect is discussed in terms of a defect-site model.
Surface damage and color centers generated by femtosecond pulses in borosilicate glass and silica
(2004)
Color center generation by femtosecond laser pulses (30 fs) is observed in a fluence range below the damage threshold in an alkali-free barium borosilicate (BBS) glass, and in a thin layer of SiO2 on a fused silica substrate. The color centers are characterized spectroscopically. The optical density of the color centers in BBS glass is by two orders of magnitude higher than that in silica. A healing process with a time constant of about 30 h can be found.
Femtosecond laser pulses are close to industrial use. The advantages of ultrashort laser pulses for micromachining applications especially in the case of dielectric and biological samples down to pulse durations of 5 fs have been established. The current international standards of laser safety are primarily concerned with CW and pulsed lasers down to the nanosecond range. Therefore, human tissue and laser-protection equipment was investigated with respect to its resistance and protection performance for femtosecond laser illumination down to 30 fs. This included filter glasses for laser protection eyewear, polymer and textile materials used in curtains and guards. Bulk absorber filters can provide enough protection against laser radiation, give a sufficiently broad absorption spectrum. Materials are damaged more easily by femtosecond laser radiation. The need for sufficient spectral broadness as well as the different damage thresholds have to be included in international laser safety standards. This work should trigger the development of novel eye-protection devices that are lighter and ergonomically more acceptable than present commercial models.
Die Funktionalität von modernen technischen Komponenten liegt meist in der Oberfläche und in Beschichtungen. Das Design und die Herstellungsqualität von Beschichtungen ist essenziell für die optischen, elektrischen, mechanischen und chemischen Eigenschaften von Bauteilen, sowie für den Korrosions- und Verschleißschutz. In diesem Gremium bearbeiten wir Normen für die Qualitätssicherung von dünnen Schichten verschiedener Art. Dabei betrachten wir Eigenschaften wie Schichtdicke, Zusammensetzung, Haltbarkeit, Korrosionsbeständigkeit und physikalische Parameter von dünnen Schichten mit sehr vielfältigen Techniken. Neben klassischen Verfahren aus der Galvanik und Schichtmesstechnik, werden dabei auch neuere spektroskopische Verfahren wie Ellipsometrie und THz-Reflektion bedeutend. Unser Gremium ist offen für neue Mitglieder aus der Oberflächen- und Beschichtungsgemeinschaft.
Embedding of information on surfaces is state of the art for identification testing in which public, hidden and forensic features are used. In many instances, the legal authentication of a product, a material or a document is required. Among the surface-based encoded labels, bar codes and data matrices are most frequently applied. They are publicly visible. The material itself is irrelevant, only a sufficient optical contrast is required.
However, a strong material dependence of the label can be achieved by means of Fabry-Perot layer stacks. Stack designs are described with regard to all three security levels: public features (e.g. color and tilt effect) perceptible by the human eye, hidden features (e.g. optical response in a given spectral range) detectable by commonly available instruments and forensic features (ellipsometric quantities Ψ and Δ as a function of wavelength λ and angle of incidence AOI) only detectable by sophisticated instruments.
Regarding material-correlated authentication, ellipsometric quantities Ψ and Δ are used as encoded forensic features for the first time. Hence, Fabry-Perot layer stacks as information carriers in combination with imaging ellipsometry as optical read-out system provide all-in-one anti-counterfeiting capabilities.
Ellipsometry is a useful tool for studying the optical properties of thin films such as photovoltaic devices. We employ Müller matrix ellipsometry to study the thin film photovoltaic material copper indium gallium selenide Cu(In,Ga) Se2 (CIGS), a commercially relevant material with high energy conversion efficiency. Confocal microscopy reveals an rms roughness of 68 nm, which greatly affects the ellipsometry data. Rayleigh-Rice theory is employed to account for the optical properties of the surface roughness in the ellipsometry experiment, and a library search method is used to compare Müller parameters calculated for various CIGS compositions, to the measured data. The Müller parameters calculated with the Rayleigh-Rice model are found to correspond well with the measured data, and a surface roughness of 37nm and a correlation length of 125nm are extracted.
Commercial grade-1 titanium samples (Ti, 99.6%) were treated using three alternative methods, (i) femtosecond laser processing, (ii) thermal heat treatment, and (iii) electrochemical anodization, respectively, resulting in the formation of differently conditioned superficial titanium oxide layers. The laser processing (i) was carried out by a Ti:sapphire laser (pulse duration 30 fs, central wavelength 790 nm, pulse repetition rate 1 kHz) in a regime of generating laser-induced periodic surface structures (LIPSS). The experimental conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning setup for the processing of several square-millimeters large surface areas covered homogeneously by these nanostructures. The differently oxidized titanium surfaces were characterized by optical microscopy, micro Raman spectroscopy, variable angle spectroscopic ellipsometry, and instrumented indentation testing. The tribological performance was characterized in the regime of mixed friction by reciprocating sliding tests against a sphere of hardened steel in fully formulated engine oil as lubricant. The specific tribological performance of the differently treated surfaces is discussed with respect to possible physical and chemical mechanisms.
Iron-doped SnO2 coatings were deposited in a 50 kHz DC-pulsed magnetron sputtering discharge. The pulses had a duration of 4 µs in selected gas mixtures from pure argon up to
60% of oxygen at a constant total pressure of 0.2 Pa. A single target of SnO2 with Fe inset was used. The mass spectrometry study detected the gas-related ions Ar+, O2+ and O+, where the last one becomes the dominant positive ion at higher oxygen contents. Atomic oxygen ions had a higher energy as it resulted from the collision-caused dissociation on the target surface. The tin-related species were detected as Sn+ and SnO+. SnO2+ species were not detected. The deposition rate decreased by using gas mixtures with oxygen as well as the corresponding amount of Sn-related species in the plasma. The increase of oxygen also increased significantly the sheet resistance of the films. The XPS study showed that the iron concentration decreased by using additional oxygen. But the O/Sn ratio in the coatings was constant, contrary to the increased FeO/Fe ratio in the films. An additional analysis of the coatings by spectroscopic ellipsometry has shown a dependence of the polarizability and the permittivity on the amount of oxygen used during the deposition. In contrast, the study has found no such dependence for the absorption of the layers.
Coatings deposited by magnetron co-sputtering from a single RF magnetron with a ceramic SnO2 target with iron inset in argon plasma were studied. The mass spectra of the process identified Sn+ and SnO+ species as the dominant species sputtered from the target, but no SnO2+ species were detected. The dominant positive ions in argon plasma are Ar+ species. The only detected negative ions were O-. Sputtered neutral tin related species were not detected. Iron related species were also not detected because their concentration is below the detection limit.
The concentration of iron dopant in the tin oxide coatings was controlled by the RF bias applied on the substrate holder while the discharge pressure also has some influence. The iron concentration was in the range from 0.9 at.% up to 19 at.% increasing with the substrate bias while the sheet resistivity decreases. The stoichiometry ratio of O/(Sn + Fe) in the coatings increased from 1.7 up to 2 in dependence on the substrate bias from floating bias (- 5 V) up to - 120 V of RF self-bias, respectively. The tin in the coatings was mainly bonded in Sn4 + state and iron was mainly in Fe2 + state when other tin bonding states were detected only in a small amounts. Iron bonding states in contrary to elemental compositions of the coatings were not influenced by the RF bias applied on the substrate.
The coatings showed high transparency in the visible spectral range. However, an increased metallic behavior could be detected by using a higher RF bias for the deposition. The X-ray diffraction patterns and electron microscopy pictures made on the coatings confirmed the presence of an amorphous phase.
Hydrogenated amorphous carbon layers were deposited on BK7 glass in a plasma-assisted chemical vapor deposition
process. Low and high refracting films with thicknesses d ranging from 11 nm to 5.8 µm were produced having refractive
indices n between 1.68 and 2.41 and linear absorption coefficients of α~100 cm-1 and α~20000 cm-1 at 800 nm wavelength as a result of different plasma modes. Laser ablation thresholds Fth in dependence on d were determined using 30-fs laser pulses. Low absorbing layers show a constant Fth while Fth increases with rising d up to the optical penetration depth of light α-1 for high absorbing films.
MgF2 and TiO2 single layers and layer stacks were produced by a spin-coating sol-gel process. The final temperature treatment was carried out at 100 °C. The layers were deposited onto silicon and fused silica substrates and were analysed by means of atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, ellipsometry, and UV-vis transmission spectroscopy. MgF2 and TiO2 single layers have morphological and optical properties comparable with physical vapour deposited layers. By using spectroscopic mapping ellipsometry, a good inter- and intra-sample homogeneity was confirmed. Multiple deposition steps result in a linear increase of layer thickness. Various films were deposited with thicknesses between 25 nm and 350 nm.
It was shown that the low temperature sol-gel process results in films of optical quality. Anti-reflective and high reflective layer stacks consisting of MgF2 and TiO2 were designed and can be produced now by a sol-gel process, whereas the MgF2 layers in the layer stacks contains also traces of MgF2-2xOx.
Dielectric, anti-reflective or high reflective systems consist of low and high refractive index layers. Common systems are oxides. The preparation of low refractive index MgF2-films of optical quality by means of an anhydrous low temperature solgel synthesis is presented. The MgF2-sol is prepared by spin-coating on silicon and glass substrates. Various film thicknesses between 20 nm and 435 nm have been deposited. It has been shown that the thickness increase is proportional to the number of coating steps. The deposited MgF2-films consist of 10 nm to 20 nm large nanoparticles and have smooth surfaces with an average roughness (Ra) of (1.7 ± 0.3) nm. The optical constants n and k of the films are in agreement with the literature data of bulk-MgF2.
Thin films of MgF2 have been deposited on silicon wafers in optical quality with a novel sol-gel deposition process at temperatures as low as 100 °C. The properties of the fluoride layers are compared to bulk MgF2 with respect to the optical constants. By employing spectroscopic mapping ellipsometry, the uniformity of the thickness of fluoride layers is confirmed to be within acceptable limits for optical applications. The optical constants are close to the bulk data. High-quality low-index films of suitable and homogeneous thickness have already been produced on a laboratory scale.
Single- and multi-shot ablation thresholds of gold films in the thickness range of 311400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence Fth on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ~0.7 J cm-2 (1-on-1), 0.5 J cm-2 (10-on-1), 0.4 J cm-2 (100-on-1), 0.25 J cm-2 (1000-on-1), and 0.2 J cm-2 (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of Lc 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electronphonon relaxation occurs. Lc is by more than an order of magnitude larger than the optical absorption length of α-1 12 nm at 793 nm wavelength.
Fluid-assisted mass transport reactions by dissolution-precipitation, where a precursor mineral reacts with a fluid, play an important role in metamorphism and metasomatism. We investigated titanite growth on rutile in time series experiments between one and 107 days at constant P-T conditions of 600 °C and 400 MPa in the system TiO2-CaO-SiO2-Na2O-HCl-H2O. A two-capsule assemblage allows for transport of Ca and Si from dissolving wollastonite to dissolving rutile, the Ti-source, in a NaCl-bearing aqueous fluid, according to the general reaction CaSiO3 + TiO2 = CaTiSiO5. Complete overgrowth of rutile by titanite occurred after just one day of experiment. Fine-grained lozenge-shaped titanite crystals of short-time runs (up to 14 days) reorganize to larger predominantly prismatic crystals after >14 days.
After investigation by scanning electron microscopy, the titanite overgrowth was removed from the rutile by hydrofluoric acid, to provide a three-dimensional view of the dissolution-reaction front on the rutile surface. The morphology of the rutile surface is dominated by humps or ridges beneath the central region of a titanite crystal and valleys at the grain boundaries between adjacent titanite crystals. The dissolution pattern on the rutile surface mimics the titanite overgrowth and changes with changing grain size and shape of the titanite with longer run times. The preferred dissolution of rutile in the valleys is clearly linked to the position of the titanite grain boundaries, which served as pathways for fluid-assisted element transport. Rutile-titanite and titanite-titanite boundaries show a significant porosity in transmission electron microscopy images of foils prepared by focused ion beam milling. The large-scale dissolution pattern on the rutile surface is independent of the crystallographic orientation of the rutile and entirely dominated by the arrangement of titanite crystals in the overgrowth. Dissolution features on a scale smaller than ~1 µm are dominated by stepwise dissolution and etch-pits following the crystallographic orientation of the rutile. Similar observations were made in experiments with an additional Al-source, although these experiments result in a different overgrowth pattern; i.e., an exposed rutile surface is always present and solitary titanite crystals are accompanied by partial overgrowths. Quantitative characterization of the surface morphology by white-light interference microscopy demonstrates that, with increasing grain size of titanite, dissolution of rutile is strongly enhanced at the titanite grain boundaries.
Natural examples of titanite overgrowths on rutile show the same relations between element pathways, arrangement of titanite crystals and 3D dissolution pattern on rutile as in the experimental systems. We conclude that the transport of Ti away from the rutile and of Ca + Si into the reaction rim occurred in a grain boundary fluid, the composition of which must have been strongly different from the composition of the bulk fluid in the experiment, as well as in the natural system. The reaction progress depends on the availability of a fluid, and relicts of rutile in titanite indicate restricted availability of fluid in the natural system (e.g., a fluid pulse that was consumed by the reactions). The reaction examined here can serve as a proxy for other reactions of the conversion of oxide minerals (e.g., spinel or corundum) into silicates.
The thermodynamic behavior of thin PVME films including the irreversible adsorbed layer on the substrate is investigated. In a first step, the growth kinetics of the adsorbed layer was studied combining a leaching technique and atomic force microscopy. Further, it was shown that there is a critical initial film thickness for the formation of a surface-filling adsorbed layer. Additionally, spectroscopic ellipsometry measurements were carried out to investigate the influence of the adsorbed layer on the glass transition temperature of the thin films. For 30 nm films and below, the influence of the adsorbed layer percolates strongly to the bulk-like layer of the film. Finally, the molecular dynamics of the adsorbed layer was studied by broadband dielectric spectroscopy, employing nanostructured-electrode systems. One process was revealed, which was assigned either to molecular fluctuations taking place in a loosely-bounded the part of the adsorbed layer, or to the desorption/adsorption of segments at the substrate.
The discussions on the nanoconfinement effect on the glass transition and glassy dynamics phenomena have yielded many open questions. Here, the thickness dependence of the thermal glass transition temperature of thin films of a PVME/PS blend is investigated by ellipsometry. Its thickness dependence was compared to that of the dynamic glass transition (measured by specific heat spectroscopy), and the deduced Vogel temperature (T0). While and T0 showed a monotonous increase, with decreasing the film thickness, the dynamic glass transition temperature () measured at a finite frequency showed a non-monotonous dependence that peaks at 30 nm. This was discussed by assuming different cooperativity length scales at these temperatures, which have different sensitivities to composition and thickness. This non-monotonous thickness dependence of disappears for frequencies characteristic for T0. Further analysis of the fragility parameter, showed a change in the glassy dynamics from strong to fragile, with decreasing film thickness.
The multi-pulse ablation threshold of barium borosilicate glass was measured using 30-fs pulses of a high repetition rate (1 kHz) laser system. The threshold fluence was found to decrease with increasing beam radius ranging from 20 to 400 m. Two existing models are applied by considering thermal accumulation and point defects, respectively .