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A gas sensor system based on the surface plasmon resonance (SPR) effect in a 44 nm Au layer was studied. The usability of this sensor system was investigated for several analyte gases and gas mixtures which are interesting due to their flammability, toxicity or greenhouse effect. The SPR effect of gold was measured in nitrogen and compared with the gaseous alkane series which caused a shift of the position of the SPR effect. For in situ measurements, the phase shift Δ at the SPR angle (ψ minimum) in the analyte gas mixtures was measured for investigated gases in comparison with nitrogen. With this method, detection limits of different gases could be determined, which lie in a range interesting for safety engineering. Furthermore the aging effect of the gold layers which leads to loss in sensitivity of the sensor was investigated.
An ellipsometric gas sensor based on the surface Plasmon resonance (SPR) effect of ~ 43 nm thick gold layers was investigated. To protect the gold layer from contamination and to improve the detection limits, the gold layers were top-coated with 5–6 nm thick layers of organic a-C:H or with inorganic metal oxides TiO2 or ZrO2. The additional layers increased the long-term stability, whereas the metal oxide layers protect better than a-C:H. Furthermore, the additional layers decreased the detection limits by one order of magnitude in case of a-C:H and two orders of magnitude in case of the oxides. It could be shown that the detection limits also depend on the kind of preparation (sol–gel process or physical vapour deposition) of the additional layers.
Laser materials processing is an important tool for creating and shaping new materials. Laser machining, especially with ultrashort pulses offers the modification of surfaces, thin coatings, and bulk materials with an unprecedented precision and control. The most desired feature of pulsed laser processing in the femtosecond range is that the heat-affected zone in the irradiated material will be extremely small. To better understand the mechanisms involved during laser irradiation, it is important to analyse the outcome of light-matter interaction with spectroscopic methods. Ellipsometry, especially spectroscopic imaging ellipsometry (SIE), has become an important tool for this in recent times, as it gives access to local layer thicknesses, materials dielectric functions, and features like changes in surface roughness.
This work includes an overview over our recent studies examining near-infrared fs-laser surface processing of different group IV materials. The superficial phase change of silicon from crystalline to amorphous has been investigated in the past as the result of laser processing strongly depends on the crystal orientation. Moreover, SIE is capable of determining the
properties of buried a-Si interfaces with micrometer lateral and sub-nanoneter vertical precision. Additionally, the growth of native and laser-induced oxides can be revealed.
e present a study on femtosecond laser treatment of amorphous hydrogen-containing carbon coatings (a-C:H). The coatings were deposited on silicon wafers by a plasma-assisted chemical vapour deposition (PA-CVD), resulting in two different types of material with distinct properties (referred to as “absorbing” and “semi-transparent” coatings in the following).
The samples were laser-treated with single fs-laser pulses (800 nm center wavelength, 35 fs pulse duration) in the ablative regime. Through a multi-method approach using topometry, Raman spectroscopy, and spectroscopic imaging ellipsometry, we can identify zones and thresholds of diferent fuence dependent efects and have access to the local dielectric function.
The two coating materials react signifcantly diferent upon laser treatment. We determined the (non-ablative) modifcation threshold fuence for the absorbing coating as 3.6 × 10−2 Jcm−2 and its ablation threshold as 0.22 Jcm−2. The semi-transparent coating does not show such a low-fuence modifcation but exhibits a characteristic interference-based intra-flm ablation mechanism with two distinguishable ablation thresholds at 0.25 and 0.28 Jcm−2, respectively. The combination of tailored layer materials and correlative imaging spectroscopic methods delivers new insights into the behaviour of materials when treated with ultrashort-pulse laser radiation
The glass transition behavior of thin films of poly(bisphenol A carbonate) (PBAC) was studied employing ellipsometry. The glass transition temperature increases with the reduction of the film thickness. This result is attributed to the formation of an adsorbed layer with a reduced mobility compared to bulk PBAC. Therefore, for the first time, the growth kinetics of the adsorbed layer of PBAC was investigated, prepared by leaching samples from a 200 nm thin film which were annealed for several times at three different temperatures. The thickness of each prepared adsorbed layer was measured by multiple scans using atomic force microscopy (AFM). Additionally, an unannealed sample was measured. Comparison of the measurements of the unannealed and the annealed samples provides proof of a pre-growth regime for all annealing temperatures which was not observed for other polymers. For the lowest annealing temperature after the pre-growth stage only a growth regime with a linear time dependence is observed. For higher annealing temperatures the growth kinetics changes from a linear to a logarithmic growth regime at a critical time. At the longest annealing times the films showed signs of dewetting where segments of the adsorbed film were removed from the substrate (dewetting by desorption). The dependence of the surface roughness of the PBAC surface on annealing time also confirmed that the films annealed at highest temperatures for the longest times desorbed from the substrate.
In well annealed thin polymer films with non-repulsive polymer/substrate interaction with a substrate an irreversibly adsorbed layer is expected to form. These adsorbed layers have shown a great potential for technological applications [1]. However, the growth kinetics and the molecular mobility of the adsorbed layer is still not fully understood. This concerns also the influence of the adsorbed layer on the thickness dependence of the glass transition temperature of thin films. This is partly due to the difficult accessibility of these layers in thin films. Here, the irreversibly adsorbed layers of semi-rigid mail chain polymers like polycarbonate or polysulfone are revealed by solvent-leaching experiments. First, the growth kinetics of these layers is investigated as a function of annealing time. The film thickness, topography and the quality of the adsorbed layer is controlled by Atomic Force Microscopy (AFM). Secondly, the molecular mobility of the adsorbed layer is investigated by Broadband Dielectric Spectroscopy (BDS). A developed nanostructured capacitor arrangement is employed to measure the layer with a free surface. In addition to the dielectric experiments, spectroscopic Ellipsometry measurements are carried out to estimate the glass transition of the thin films. The thickness dependence of the glass transition of the thin films is correlated with the adsorbed layer [2,3].
Acknowledgments
D. Hülagü and G. Hidde thanked for the help with the ellipsometry measurements.
The discussions on the nanoconfinement effect on the glass transition and glassy dynamics phenomena have yielded many open questions. Here, the thickness dependence of the thermal glass transition temperature of thin films of a PVME/PS blend is investigated by ellipsometry. Its thickness dependence was compared to that of the dynamic glass transition (measured by specific heat spectroscopy), and the deduced Vogel temperature (T0). While and T0 showed a monotonous increase, with decreasing the film thickness, the dynamic glass transition temperature () measured at a finite frequency showed a non-monotonous dependence that peaks at 30 nm. This was discussed by assuming different cooperativity length scales at these temperatures, which have different sensitivities to composition and thickness. This non-monotonous thickness dependence of disappears for frequencies characteristic for T0. Further analysis of the fragility parameter, showed a change in the glassy dynamics from strong to fragile, with decreasing film thickness.
This work studies the influence of the adsorbed layer on the glass transition of thin films of polysulfone. Therefore, the growth kinetics of the irreversibly adsorbed layer of polysulfone on silicon substrates was first investigated using the solvent leaching approach, and the thickness of the remaining layer was measured with atomic force microscopy. Annealing conditions before leaching were varied in temperature and time (0–336 h). The growth kinetics showed three distinct regions: a pre-growth step where it was assumed that phenyl rings align parallel to the substrate at the shortest annealing times, a linear growth region, and a crossover from linear to logarithmic growth observed at higher temperatures for the longest annealing times. No signs of desorption were observed, pointing to the formation of a strongly adsorbed layer.
Second, the glass transition of thin polysulfone films was studied in dependence on the film thickness using spectroscopic ellipsometry. Three annealing conditions were compared: two with only a tightly bound layer formed in the linear growth regime and one with both tightly bound and loosely adsorbed layers formed in the logarithmic growth regime. The onset thickness and increase in the glass transition temperature increases with annealing time and temperature. These differences were attributed to the distinct conformations of the formed adsorbed layers.
The molecular dynamics of thin films and the adsorbed layer of poly(2-vinylpyridine) (P2VP) were investigated using broadband dielectric spectroscopy (BDS) and spectroscopic ellipsometry. Thin films of P2VP were prepared on silicon substrates and characterized to understand the influence of film thickness on the thermal glass transition temperature (Tg) and molecular mobility. The ellipsometric study revealed a decrease in Tg with decreasing film thickness, attributed to the enhanced mobility at the polymer/air interface. The adsorbed layer, prepared via the solvent leaching approach, exhibited a higher Tg compared to the bulk, indicating reduced molecular mobility due to strong polymer substrate interactions. The dielectric measurements were carried out in two different electrode configurations, crossed electrode capacitors (CEC) and nanostructured electrodes (NSE), where the latter allows for a free surface layer at the polymer/air interface. The relaxation rates of the α-relaxation measured in the CEC geometry collapse into one chart independent from the film thickness. For the thin films measured in the NSE arrangement the relaxation rates slow down with decreasing film thickness which was discussed as related to a stronger interaction of the P2VP segments with the native SiO2 at the surface of the silicon substrate compared to aluminum. It is worth to note that the effect of the enhanced mobility at the polymer/air interface is not observed in the dielectric measurements. BDS measurements in NSE geometry identified an additional relaxation process (α*-relaxation) in thin films, which was more pronounced in the adsorbed layer. This process is hypothesized to be related to molecular fluctuations within the adsorbed layer including the adsorption/desorption dynamics of segments or to a Slow Arrhenius Process (SAP) related to the equilibration dynamics deep in the glassy state.
In this work, thin iron doped tin oxide layers (3–6 nm) were investigated with regard to gas sensitivity by means of surface plasmon resonance (SPR) effect with ellipsometric readout. The experimental set-up was a Kretschmann configuration with gold as metal layer. The sensor system was exposed to different concentrations of methane in the low ppm range and the sensor response of an uncoated gold layer compared to a gold layer coated with iron doped tin oxide. The additional layer effects stability with regard to drift behavior of the sensor and an increase in sensitivity. Furthermore, the sensor is able to detect the toxic gas carbon monoxide in low concentration range (down to 0.5 ppm). The thin layers were investigated by X-ray photoelectron spectroscopy, secondary electron microscopy and spectroscopic ellipsometry. The possible mechanisms taking place on the surface are discussed.
