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Eingeladener Vortrag
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This Report describes the certification of the reference material antimony implanted in Si/SiO2 intended to be used for calibration of surface and near surface analytical methods. It describes the preparation, homogeneity measurements and the analytical work performed for the certification of both Areal density of antimony Atoms (retained dose) and the isotope amount Ratio as well as giving considerations on the stability of the material.
The Federal Institute for materials research and testing (BAM)in cooperation with the Fachhochschule Münster has developed a new certified polymeric reference material, BAM-H010. The reference material consists of acrylonitrile–butadiene–styrene terpolymer (ABS) and has been doped with different contents of the elements Br, Cd, Cr, Hg and Pb. The monitoring of these elements is demanded in the EU directive 2002/95/EG, commonly referred to as RoHS. We have shown that the uncertainty contribution of the thermal long-term stability (ustability) is negligible compared to the contribution to the uncertainty caused by the method used for the characterization of the elemental content and the batch inhomogeneity (uhomogeneity). The stability of theABS material during exposure of the samples with hard X-radiation leads to a degradation of the ABS matrix with either long- or short-chain products.
A new setup for fast spatially resolved measurements of elemental trace amounts under total reflection conditions using a new colour X-ray camera is described. Samples prepared on conventional total reflection X-ray fluorescence (TXRF) reflectors were measured at BESSY II synchrotron. A spatial resolution of 50 × 50 µm² was obtained, while the required time for the investigation of a 10 × 10 mm² sample is 30 seconds. The set-up is up to 350 times faster than conventional X-ray fluorescence systems for elemental traces. The major components of the X-ray camera are polycapillary optics and a pn-CCD chip with an active area of 13 × 13 mm². This area is divided into 264 × 264 pixels of 48 × 48 µm². A full X-ray spectrum with a resolution of 152 eV @ 5.9 keV and a chip temperature of 246 K is recorded for each pixel. The chip has a read-out rate of 400 Hz.