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- Silicon nitride (2) (entfernen)
Porous silicon nitride ceramics were prepared via sintered reaction bonded silicon nitride at 1680 °C. The grain size of nitrided Si3N4 and diameter of post-sintered ß-Si3N4 are controlled by size of raw Si. Porosity of 42.14–46.54% and flexural strength from 141 MPa to 165 MPa were obtained. During post-sintering with nano Y2O3 as sintering additive, nano Y2O3 can promote the formation of small ß-Si3N4 nuclei, but the large amount of ß-Si3N4 (>20%) after nitridation also works as nuclei site for precipitation, in consequence the growth of fine ß-Si3N4 grains is restrained, the length is shortened, and the improvement on flexural strength is minimized. The effect of nano SiC on the refinement of the ß-Si3N4 grains is notable because of the pinning effect, while the effect of nano C on the refinement of the ß-Si3N4 grains is not remarkable due to the carbothermal reaction and increase in viscosity of the liquid phase.
Gradient porous silicon nitride (Si3N4) was fabricated by a novel vacuum foaming and freeze drying process. Aqueous Si3N4 slurries were foamed at vacuum pressure of 50–90 kPa, the green body was obtained by the freeze drying process, a gradient pore structure with porosities of 72–90% was achieved after pressureless sintering at 1680 °C. The porosity was increased with decreasing vacuum pressure. The pore structure consists of large pores (~100 μm) on top, medium pores (~45 μm) on the wall of the large pores, and small pores (~0.7 μm) in the matrix. Such gradient porous Si3N4 with macro- and micro-pores has potential application as high temperature filters.