The chemical and microstructural changes occurring during braking simulation tests at the surface of a conventional brake pad material were investigated mainly by scanning and transmission electron microscopy and surface analytical techniques. It can be shown that patches of a third body material develop, comprising a compositional mix of all constituents of the pad and iron oxides from the disk. Milled debris particles still have the crystal structure of barite, the major phase of the pad material, but the grain size is reduced drastically to the nanometer scale. The major wear mechanism is delamination of filler particles from the organic binder, supported by local degradation of the phenolic resin during asperity heating. Quartz crystals are preserved thereby adopting the function of primary contact areas.
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
(1996)
Phase formation in rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As has been investigated by means of cross-sectional transmission electron microscopy, convergent-beam electron diffraction, and energy-dispersive x-ray analysis. Solid-phase regrowth is observed to occur similarly as in Pd/Ge contacts on GaAs or InP. The reaction starts at low temperatures with the formation of an amorphous Pd–In–Ga–As layer, which crystallizes at elevated temperatures yielding hexagonal Pd4In0.53Ga0.47As being first described in this work. At temperatures .250 °C, this phase decomposes due to epitaxial solid-phase regrowth of In0.53Ga0.47As and formation of Pd–Ge phases. The stable composition is reached at temperatures .350 °C with excess Ge diffused through top Pd–Ge to the contact interface and growing epitaxially on the semiconductor.