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In the present chapter, the capabilities of Raman spectroscopy for the advanced characterisation of thin films for solar cells are reviewed. Raman spectroscopy is an optical, nondestructive technique based on the inelastic scattering of photons with elemental vibrational excitations in the material. The line shape and position of the Raman bands are determined by the crystalline structure and chemical composition of the measured samples, being sensitive to the presence of crystalline defects, impurities and strain. Presence of peaks characteristic of different phases also allows for the identification of secondary phases that are strongly related to the growth and process conditions of the films. All these aspects account for a strong interest in the analysis of the Raman spectra, providing a powerful nondestructive analytical tool for the structural and chemical assessment of the films. In addition, the combination of a Raman spectrometer with an optical microscope also allows for achieving a high spatial resolutions (of below 1 µm) when mapping surfaces and analyzing depth-resolved phase distributions in thin films.
The present chapter is divided into four main sections: The two first ones are devoted to a revision of the Fundamentals of Raman spectroscopy (Section 17.2) and Vibrational modes in crystalline materials (Section 17.3). Section 17.4 deals with the main experimental considerations involved in the design and implementation of a Raman scattering setup. This is followed by a detailed description of the application of Raman scattering for the structural and chemico-physical analysis of thin film photovoltaic materials (Section 17.5), with the identification of crystalline structure and secondary phases, evaluation of film crystallinity, analysis of chemical composition of semiconductor alloys, characterisation of nanocrystalline and amorphous layers, stress effects and crystal orientations. This includes the description of corresponding state of the art and recent case examples that illustrate the capabilities of the Raman technique for the advanced characterisation of layers and process monitoring in thin-film photovoltaic technologies.
Spatial heterodyne spectroscopy (SHS) is a novel spectral analysis technique that is being applied for Raman spectroscopy of minerals. This paper presents the theoretical basis of SHS and its application for Raman measurements of calcite, quartz and forsterite in marble, copper ore and nickel ore, respectively. The SHS measurements are done using a broadband (518–686 nm) and resolving power R ≈ 3000 instrument. The spectra obtained using SHS are compared to those obtained by benchtop and modular dispersive spectrometers. It is found that SHRS performance in terms of resolution is comparable to that of the benchtop spectrometer and better than the modular dispersive spectrometer, while the sensitivity of SHRS is worse than that of a benchtop spectrometer, but better than that of a modular dispersive spectrometer. When considered that SHS components are small and can be packaged into a handheld device, there is interest in developing an SHS-based Instrument for mobile Raman spectroscopy. This paper evaluates the possibility of such an application.
We present a versatile and simple method using electrochemistry for the exclusive functionalization of the edge of a graphene monolayer with metal nanoparticles or polymeric amino groups. The attachment of metal nanoparticles allows us to exploit surface-enhanced Raman scattering to characterize the chemistry of both the pristine and the functionalized graphene edge. For the pristine patterned graphene edge, we observe the typical edge-related modes, while for the functionalized graphene edge we identify the chemical structure of the functional layer by vibrational fingerprinting. The ability to obtain single selectively functionalized graphene edges routinely on an insulating substrate opens an avenue for exploring the effect of edge chemistry on graphene properties systematically.
Self-mated magnesia stabilized zirconia (Mg-PSZ) ceramic sliding couples have been investigated at 100 N load (P0max= 1324 MPa) in oscillating sliding conditions in different humidity conditions in air and in hot steam. Temperatures have been varied up to 400 °C and pressures up to 6 bars. The results show that the wear behavior of MgO-ZrO2 under high Hertzian contact pressures is strongly dependent on temperature and is similar for both dry oscillating and oscillating in hot steam. However, although the evolution in wear rates on temperature is similar and the wear rates of MgO-ZrO2 plunged above 300 °C in hot steam and air by nearly three orders of magnitude, SEM micrographs revealed in hot steam at 400 °C smooth wear tracks. In contrast, hot steam enhanced the tribochemistry of self-mated alumina couples and reduced wear rates. Hot steam decreased the coefficients of friction of MgO-ZrO2 with increasing temperature, but not the wear rates.
The investigation of the microstructure in functional, polycrystalline thin films is an important contribution to the enhanced understanding of structure–property relationships in corresponding devices. Linear and planar defects within individual grains may affect substantially the performance of the device. These defects are closely related to strain distributions. The present work compares electron and X-ray diffraction as well as Raman microspectroscopy, which provide access to microstrain distributions within individual grains. CuInSe₂ thin films or solar cells are used as a modelsystem. High-resolution electron backscatter diffraction and X-ray microdiffraction as well as Ramanmicrospectroscopy were applied for this comparison. Consistently, microstrain values were determined of the order of 10⁻⁴ by these three techniques. However,only electron backscatter diffraction, X-ray microdiffraction exhibit sensitivities appropriate for mapping local strain changes at the submicrometer level within individual grains in polycrystalline materials.
Microstrain distributions were acquired in functional thin films by high-resolution X-ray microdiffraction measurements, using polycrystalline CuInSe2 thin films as a model system. This technique not only provides spatial resolutions at the submicrometre scale but also allows for analysis of thin films buried within a complete solar-cell stack. The microstrain values within individual CuInSe2 grains were determined to be of the order of 10^-4. These values confirmed corresponding microstrain distribution maps obtained on the same CuInSe2 layer by electron backscatter diffraction and Raman microspectroscopy.
Raman microspectroscopy provides the means to obtain local orientations on polycrystalline materials at the submicrometer level. The present work demonstrates how orientation-distribution maps composed of Raman intensity distributions can be acquired on large areas of several hundreds of square micrometers. A polycrystalline CuInSe2 thin film was used as a model system. The orientation distributions are evidenced by corresponding measurements using electron backscatter diffraction (EBSD) on the same identical specimen positions. The quantitative, local orientation information obtained by means of EBSD was used to calculate the theoretical Raman intensities for specific grain orientations, which agree well with the experimental values. The presented approach establishes new horizons for Raman microspectroscopy as a tool for quantitative, microstructural analysis at submicrometer resolution.
This overview article provides insight into how to apply Raman spectroscopy in combination with a confocal, optical microscope setup on polycrystalline material systems, in order to obtain quantitative information on phase distribution, grain sizes, crystal orientations and microstrain. Although the present work uses Cu(In,Ga)(S,Se)₂ absorber layers in corresponding thin-film solar cells as a model system to demonstrate the capabilities of Raman microspectroscopy, the approaches discussed may be applied to any organic or inorganic, polycrystalline materials system.