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We show both theoretically and experimentally how the encapsulation of the active region by additional guard layers can be used to achieve a significant reduction of the built-in electric fields in polar nitride heterostructures. This reduction of the QCSE results in a strongly enhanced emission intensity and faster recombination dynamics in the active region. In particular we are able to shift the emission energy of 4-nm-thick GaN nano-discs up to 3.32 eV, which is just 150 meV below the bulk GaN bandgap as compared to a red-shift of about 1 eV in a conventional heterostructure with the same thickness.