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- EDX (1)
- Electron backscatter diffraction (1)
- Energy dispersive x-ray spectroscopy (1)
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Within the last decade, silicon drift detectors (SDD) systems have become more and more popular in the field of energy-dispersive spectroscopy (EDS). The main characteristic of the SDDs is their extremely high pulse load capacity of up to 750,000 counts per second at good or reasonable energy resolution (<123eV Mn-Kα, <46eV C-Kα at 100.000 cps). These properties in conjunction with electron backscatter diffraction (EBSD) techniques and modern data processing make a range of innovative analysis options possible, not only high speed mapping but also hyperspectral imaging techniques.
Advances in scanning electron microscopy (SEM) enable the high-resolution imaging of single nanoparticles (NPs) with sizes well below 10 nm. The SEM analysis in transmission mode (T-SEM) of NPs on thin film supports has many benefits when compared to the analysis of NPs on bulk substrates. The enhanced material (mass - thickness) contrast of the T-SEM imaging mode is well suited for in-depth and, particularly valuable, to very accurate, traceable, lateral dimensional measurements of NPs. Compared to samples prepared on bulk substrates, T-SEM with energy dispersive X-ray spectroscopy (EDS) achieves a drastically improved spatial resolution of the emitted X-rays. The poor signal-to-noise ratio of the X-ray spectra emitted by a single nanoparticle (NP) can be improved by the use of high-sensitivity (high collection solid angle) silicon drift (SDD), energy-dispersive X-ray spectrometers (EDS). The EDS spectral imaging of a single NP with a spatial resolution below 10 nm has become possible. This is demonstrated by means of various examples of nanostructures. Advanced data processing of T-SEM/EDS results sets the stage for the automated classification of NPs by feature analysis. This method combines the detection of morphological structures of interest by image processing of T-SEM micrographs with the chemical classification by EDS.