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- Depth profiling (2) (entfernen)
Depth profiles of layer systems consisting of different film materials and having different thicknesses are of great practical importance. Multilayer reference coatings of conducting (Ti/Al) and non-conducting (SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (AES) and glow discharge optical emission spectroscopy (GDOES) depth profiling. Deposition techniques, physical vapor deposition for Ti/Al layers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layers, as well as measurement and testing procedures for the determination of layer thickness such as optical and mechanical stylus and spectroscopie ellipsometry are discussed. GDOES depth profiles in direct current (d.c.) and radio frequency (r.f.) mode are related to measurements of crater profiles and compared with line scans and depth profiles performed by AES. It is shown that such multilayer reference systems are appropriate for calibration of depth profiles, i.e. the definition and the evaluation of the depth resolution at the interface, the determination of sputter rates both for d.c.- and r.f.-GDOES and AES, the optimization of the conditions of analysis, and the quantification of analysis itself.