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Many wooden artworks are contaminated by DDT (dichlorodiphenyltrichloroethane) as a result of a surface treatment by means of the liquid preservative Hylotox-59©. It was used until the end of the 1980s. DDT crystal structures are formed on the wood surfaces by the "blooming" of chlorine compounds. In addition to an aesthetic disturbance, it is assumed that DDT represents a health risk. Even decades after applying, the toxins in the wood preservatives are still detectable because they are of low volatility in many wood samples. Contaminated waste wood with natural biocide ageing, gilded and wood carved elements of an old picture frame and wooden samples with paint layers were provided by the Schlossmuseum Sondershausen. Non-contact procedures using laser and plasma appear reasonable to remove the DDT crystals. During the experiments, health and safety issues for the operator have to be taken into account.
The removal of DDT was evaluated employing femtosecond and nanosecond laser radiation and cold atmospheric plasma techniques with different working gases (air, nitrogen, and argon). Before laser application, a chlorine measurement representing the DDT density on the wooden surface is done by X-ray fluorescence (XRF) analysis as reference. After laser processing, the XRF analysis is used again at the same surface position to determine the depletion rate. Additionally, a documentation and characterization of the sample surface is performed before and after laser and plasma treatment using optical microscopy (OM). For plasma processing with various systems a chlorine measurement is done by gas chromatographic-mass spectrometry (GCMS) analysis.
Laser-induced periodic surface structures (LIPSS) were generated on two types of steel (100Cr6, X30CrMoN15-1) and two types of titanium (Ti, Ti6A14V) surfaces upon irradiation with multiple linear polarized femtosecond laser pulses in air environment (pulse duration 30 fs, central wavelength 790 nm, pulse repetition rate 1 kHz, Gaussian beam shape). Teh conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning geometry for the processing of large surface areas covered homogeneously by two different types of LIPSS - either near wavelength or sub-100 nm structures. The tribological performance of the nanostructured surfaces was characterized under reciprocating sliding at 1 Hz against a ball of hardened steel using different lubricants and normal forces. After 1000 cycles the corresponding wear tracks were characterized by optical and scanning electron microscopy. For specific conditions, the wear was strongly reduced and laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient was observed in the laser-irradiated LIPSS-covered areas, indicating the benefit of laser surface structuring for tribological applications. The spatially Gaussian shaped beam used for the laser processing was transformed via beam shaping into a top hat distribution at the surface of the samples for optimization. The tribological performance of the laser-induced nanostructures is discussed on the basis of different physical and chemical mechanisms.
Single-pulse damage thresholds of hydrogenated amorphous carbon (a-C:H) films were measured for 8-ns laser pulses at 532-nm wavelength. Layer thicknesses from below the optical penetration depth to above the thermal diffusion length (60 nm13 µm) were examined. After correction of the damage-threshold values for the fraction of energy effectively absorbed by the material, the damage threshold was found to increase linearly with the layer thickness, also for film thicknesses below the optical penetration depth of a-C:H. The threshold fluence reached the bulk value for a layer thickness equal to the thermal diffusion length. The thermal diffusion coefficient was obtained from fitting the experimental data. Several phenomena like graphitization, blistering, exfoliation, and ablation were observed for different fluence regimes and film thicknesses.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.