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Eingeladener Vortrag
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A detailed diagnostic study of the interaction of nanosecond laser pulses from the near-ultraviolet into the near-infrared
wavelength range with various types of contemporary and ancient parchments is presented. The advantages of laser
cleaning due to the absence of chemical agents, spectroscopic selectivity, micro-precision, computer-aided handling can
only be verified when physico-chemical diagnostics guarantee destructionless processing. Scanning Electron Microscopy
(SEM) data are correlated with morphological changes in dependence on the laser fluence and wavelength. The
question, to what extent the chemical degradation of collagen is affected by various laser treatment parameters, could be
resolved by Transmission Electron Microscopy (TEM) of collagen fibres collected from the outermost laser-exposed
surface layer. It is also shown how Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFT), and
Pyrolysis Capillary Gaschromatography (PY-CGC) can be employed in the chemical diagnostics of laser cleaning of
parchment. This study suggests that the ageing status of parchment artefacts plays a major role in assessing the laser
cleaning limits.
Single-pulse damage thresholds of hydrogenated amorphous carbon (a-C:H) films were measured for 8-ns laser pulses at 532-nm wavelength. Layer thicknesses from below the optical penetration depth to above the thermal diffusion length (60 nm13 µm) were examined. After correction of the damage-threshold values for the fraction of energy effectively absorbed by the material, the damage threshold was found to increase linearly with the layer thickness, also for film thicknesses below the optical penetration depth of a-C:H. The threshold fluence reached the bulk value for a layer thickness equal to the thermal diffusion length. The thermal diffusion coefficient was obtained from fitting the experimental data. Several phenomena like graphitization, blistering, exfoliation, and ablation were observed for different fluence regimes and film thicknesses.
One of the most important materials presenting and witnessing human culture is paper. The cleaning of paper is often necessary because contamination must be removed so that the fragile organic substrate can be preserved. The conventional cleaning methods are mechanical or involve the application of chemicals. These methods can damage drawings or print layers to some extent or make the original paper substrate brittle. More specifically, the use of a scalpel blade can cause damage to fibers. Chemical cleaning is difficult to perform locally, can dissolve foreign matter that then migrates into the paper substrate, or involves volatile organic compounds that can be harmful to the conservator. There is, therefore, a need for new conservation technologies aimed at the safe cleaning of paper. Lasers have proved to be an appropriate tool for cleaning as the energy dose and penetration depth at the specific point of contamination can be controlled. Additionally, if used properly, laser cleaning is not destructive to the paper.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Laser cleaning of soiled paper is a challenging task due to the fact that a contamination has to be removed and a fragile organic material has to be preserved. The ejection of particles forms a significant channel for the removal of unwanted surface contaminations and can be exploited for an in-situ monitoring of the cleaning procedure. 532-nm-nanosecond single and multi pulse laser cleaning of artificially soiled Whatman© paper was performed. Particles were registered with a dust monitor. These in-situ experiments were combined with ex-situ investigations of cleaning and substrate damage thresholds by means of light and scanning electron microscopic techniques. The cleaning efficiency measured by a multi-spectral imaging system was compared to the in-situ particle monitoring. Additionally, possible color changes of the paper substrate were evaluated.