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During focused ion beam microscopy (FIB) of crystalline materials imaging contrast and milling result are effected by orientation of the crystals with respect to the incident ion beam. This is due to the possibility of ion channeling along preferred crystal directions which effects the depth at which interaction between ions and specimen atoms takes place. As a result of channeling emission of ion induced secondary electrons (iiSE) and secondary ions (SI) as well as the sputter rate decreases.
Theoretical channeling orientations and critical angles can be calculated.
These effects have been studied quantitatively for polycrystalline recrystallized Cu as a typical model case.